Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Effect of Hydrogenation on the Luminescence Evolution of Gan under Low Energy Electron Beam Irradiation

Surface Effects on the Luminescence Degradation of Hydride Vapor-Phase Epitaxy-Grown Gan Induced by Electron-Beam Irradiation

Modulation Effects of Hydrogen on Structure and Photoluminescence of GaN Nanowires Prepared by Plasma-Enhanced Chemical Vapor Deposition

Effect of Hydrogen on Radiation-Induced Displacement Damage in AlGaN/GaN HEMTs

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quantum-Well Light-Emitting Diodes with V-Shaped Pits Grown on Si Substrates

Effects of isochronal thermal annealing and hydrogenation on photoluminescence from n-type GaN films grown by metalorganic vapor phase epitaxy

Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure

Hydrogen induced changes on hydride vapor phase epitaxy of GaN growth

Effect of Hydrogen Poisoning on P-Gate AlGaN/GaN HEMTs

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Effects of hydrogen irradiation on the electrical properties of dilute nitride GaAsN Schottky diodes

Effect of H2 treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes

Investigation on High-Energy Electron Irradiation on GaN Heterostructure by EBSD

Dislocation Clustering and Luminescence Nonuniformity in Bulk Gan and Its Homoepitaxial Film

Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy

Research on Evolution of Relevant Defects in Heavily Mg-Doped GaN by H Ion Implantation Followed by Thermal Annealing

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors