Hydrogen Passivation Effect On Enhanced Luminescence From Nanocrystalline Si/Sio2 Multilayers

ZhengYue Xia,Peigao Han,Jun Xu,Deyuan Chen,Deyuan Wei,Zhongyuan Ma,Kunji Chen,Ling Xu,XinFan Huang,夏正月,韩培高,徐骏,陈德媛,韦德远,马忠元,陈坤基,徐岭,黄信凡

DOI: https://doi.org/10.1088/0256-307X/24/9/054

2007-01-01

Chinese Physics Letters

Abstract:kjhkljh

What problem does this paper attempt to address?

Enhancement and Stability of Photoluminescence from Si Nanocrystals Embedded in A Sio2 Matrix by H-2-Passivation

Yanli Li,Peipei Liang,Zhigao Hu,Shuang Guo,Qinghu You,Jian Sun,Ning Xu,Jiada Wu

DOI: https://doi.org/10.1016/j.apsusc.2014.02.047

IF: 6.7

2014-01-01

Applied Surface Science

Abstract:Si nanocrystals embedded in SiO2 (Si-NCs/SiO2) with efficient light emission were prepared by N-2-annealing of amorphous SiOx (a-SiOx) and subsequent H-2-passivation, and the effects of passivationon the photoluminescence (PL) from Si-NCs/SiO2 were studied. The H-2-passivation was performed in a mixed gas of 5% H-2 + 95% N-2 at temperatures ranging from 400 to 700 degrees C for varied times, which is effective for passivating dangling bonds and enhancing luminescence. The PL intensity increases with passivation time, shortly followed by a saturation that depends on the passivation temperature. The H-2-passivation also results in a red shift of PL spectra. The effects of H-2-passivation show nearly complete reversibility as revealed by the emitted luminescence. Subsequent heating of the passivated samples in N-2 has an effect of depassivation which regenerates dangling bonds and the regenerated dangling bonds can also be passivated. Si-NCs/SiO2 are found to exhibit stable behaviors in passivation and depassivation processes after three cycles of passivation and depassivation treatments. (C) 2014 Elsevier B.V. All rights reserved.
Enhanced Electroluminescence from Si Quantum Dots-Based Light-Emitting Devices with Si Nanowire Structures and Hydrogen Passivation

Y. Y. Zhai,Y. Q. Cao,Z. W. Lin,M. Q. Qian,J. Xu,W. Li,L. Xu,K. J. Chen

DOI: https://doi.org/10.1109/jphot.2016.2600373

IF: 2.4

2016-01-01

IEEE Photonics Journal

Abstract:Enhanced electroluminescence (EL) has been achieved from the light-emitting devices containing Si quantum dots/SiO2 multilayers deposited on Si nanowire arrays because of the good antireflection characteristics of Si nanowire structures, which improves the light extraction efficiency. However, it is found that the EL is first enhanced with increasing the depth of the Si nanowires and then reduced to further increase the depth, though it exhibits the lowest reflectance (similar to 3%), which may be due to the increased surface defect states after long time etching, as revealed by electron spin resonance measurements. It is demonstrated that the posthydrogen plasma annealing treatments can passivate the surface defect states which, in turn, improve device performance. The best device shows the turn-on voltage as low as 3.5 V, and the EL intensity of devices on Si nanowire arrays is enhanced 16-fold, compared with that of flat one.
Effects of O, H and N passivation on photoluminescence from porous silicon

Z.H. Xiong,L.S. Liao,S. Yuan,Z.R. Yang,X.M. Ding,X.Y. Hou

DOI: https://doi.org/10.1016/S0040-6090(00)01887-3

IF: 2.1

2001-01-01

Thin Solid Films

Abstract:A simple but effective passivation method for porous silicon (PS) has been developed. Immersion of as-etched PS in dilute (NH4)2S/C2H5OH solution followed by ultraviolet light irradiation in air can lead to an enhancement of photoluminescence (PL) up to more than 20 times. Infrared absorption and Auger electron spectroscopic measurements show that the formation of SiH(O3), SiOSi and SiN bonds are formed during the post-treatment process. However, the PL intensity cannot be enhanced if the solution-treated sample is exposed to the laser beam in vacuum. It is thus concluded, that the PL enhancement can be attributed to the presence of compact passivation films consisting of the oxides and the nitride on both external and internal surfaces of the sponge-like PS samples.
Influence of hydrogen passivation on the luminescence of Si quantum dots embedded in Si3Nx

Zhi-Qiang Wang,P. Simpson,L. Goncharova,P. Nguyen,Carolyn Cadogan,T. Sham

DOI: https://doi.org/10.1116/1.4963369

2016-11-29

Abstract:Silicon quantum dots (Si-QDs) of various diameters were formed by annealing of Si-rich silicon nitride (Si3Nx) films synthesized using plasma-enhanced chemical vapor deposition. To investigate the effect of annealing temperature on the luminescence of this system, samples were annealed at temperatures from 400 to 1000 °C. Photoluminescence (PL), x-ray absorption near edge spectroscopy, elastic recoil detection, and Fourier-transform infrared spectroscopy measurements were used for characterization. The authors found that luminescence originated from both quantum confinement effects (QCE) and defects, and that hydrogen passivation affects the PL intensity. For lower annealing temperatures, radiative recombination due to the QCE of the Si-QDs films was observed. For higher annealing temperatures (above 600 °C), desorption of hydrogen from the sample caused the PL intensity to decrease significantly. Si3Nx films with a lower Si content were less sensitive to this reduction in PL intensity after annealing at ...

Physics,Materials Science
Effects of hydrogen plasma annealing on the luminescence from a-Si:H/SiO2 and nc-Si/SiO2 multilayers

Y RUI,D CHEN,J XU,W LI,Z CEN,X HUANG,K CHEN

DOI: https://doi.org/10.1016/j.apsusc.2007.04.058

IF: 6.7

2007-01-01

Applied Surface Science

Abstract:Effects of post-hydrogen plasma annealing (HPA) on a-Si:H/SiO2 and nc-Si/SiO2 multilayers have been investigated and compared. It is found that photoluminescence (PL) from hydrogen-passivated samples was improved due to the reduction of non-radiative recombination defects. Some interesting difference is that during HPA, atomic hydrogen can directly passivate defects of a-Si:H/SiO2, which results in the reappearance of luminescence band at 760nm, while for nc-Si/SiO2, hydrogen passivation requires additional thermal annealing after nc-Si/SiO2 multilayer was treated by HPA. It is indicated that higher atomic mobility is needed to passivate defects at nc-Si/SiO2 interface compared with a-Si:H/SiO2 interface.
Characteristics of Luminescent Nc-Si/sio 2 Multilayers and the Influence of Annealing in Hydrogen

Zhengyue Xia,Han Pei-Gao,Wei De-Yuan,Deyuan Chen,Xu Jun,Zhongyuan Ma,Xinfan Huang,Kunji Chen

DOI: https://doi.org/10.7498/aps.56.6691

IF: 0.906

2007-01-01

Acta Physica Sinica

Abstract:Plasma enhanced chemical vapor deposition (PECVD) was used to prepare a-Si:H/SiO 2 multilayers. Two-step thermal annealing was then used to transform them into nc-Si/SiO 2 multilayers. The size of formed nc-Si (about 4nm) can be controlled and room temperature visible photoluminescence was observed from the annealed samples with the peak located at 750nm. Moreover, we found that annealing in hydrogen can enhance the PL intensity of the materials. The electron paramagnetism resonance (EPR) suggested that annealing in hydrogen atmospheye effectively reduces the nonradiative recombination sites existing in the nc-Si and results in the enhancement of the luminescence efficiency.
Enhanced Luminescence from Si Quantum Dots/sio2 Multilayers by Hydrogen Annealing

Jun Xu,Weiwei Mu,Zhengyue Xia,Hongchen Sun,Deyuan Wei,Wei Li,Zhongyuan Ma,Kunji Chen

DOI: https://doi.org/10.1016/j.jnoncrysol.2011.12.009

IF: 4.458

2012-01-01

Journal of Non-Crystalline Solids

Abstract:Si quantum dots/SiO2 multilayers were prepared by annealing a-Si:H/SiO2 stacked structures at 1100°C . Photo- and electro-luminescence band around 750nm can be observed from Si QDs/SiO2 multilayers due to the recombination of electron-hole pairs in Si QDs/SiO2 interfaces. The electro-luminescence intensity was obviously enhanced after post hydrogen annealing at 400°C. Electron spin resonance measurements were used to characterize the change of the defect states after hydrogen annealing. It is found that there exists a-centers (g value=2.006), which is related to the Si dangling bonds in Si QDs in our samples. Hydrogen annealing can significantly reduce non-luminescent a-centers and enhance the electro-luminescence intensity consequently.
Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Peigao Han,Zhongyuan Ma,ZhengYue Xia,Deyuan Chen,Jun Xu,Bo Qian,San Chen,Wei Li,XinFan Huang,Kunji Chen,Duan Feng,韩培高,马忠元,夏正月,陈德媛,徐骏,钱波,陈三,李伟,黄信凡,陈坤基

DOI: https://doi.org/10.1088/1009-1963/16/5/040

2007-01-01

Chinese Physics

Abstract:Enhanced photoluminescence (PL) at room temperature from thermally annealed a-Si:H/SiO2 multilayers is observed through the step-by-step thermal post-treatment. The correlation between the PL, and the crystallization process is studied using temperature-dependent PL, Raman, cross section high-resolution transmission electron microscopy (X-HRTEM) and x-ray diffraction (XRD) techniques. An intensified PL band around 820 nm is discovered from the sample annealed near the crystallization onset temperature, which is composed of two peaks centred at 773 ran and 863 nm, respectively. It is found that the PL band centred at 863 nm is related to the pseudo nanocrystal (p-nc-Si) silicon, and the PL, band centred at 773 nm is attributed to Si = O bonds stabilized in the p-nc-Si surface.
Effective Passivation on Si Nanocrystal Surface by Peroxide

Y. C. Cheng,W. C. Zhang,X. L. Wu,T. Qiu,G. S. Huang,G. G. Siu,Paul K. Chu

DOI: https://doi.org/10.1016/j.jcrysgro.2007.02.005

IF: 1.8

2007-01-01

Journal of Crystal Growth

Abstract:Using ultrasonic vibration of as-made porous silicon in water, the suspension of Si nanocrystals is prepared for exploring light-emitting properties of Si nanocrystals. By analyzing the photoluminescence (PL) property of the as-made suspension, we conclude that the observed red PL band arises from radiative recombination of carriers in the interface layer full of Si-H-x (x = 1, 2) and Si=O bonds. To effectively passivate the Si nanocrystal surface, we mixed the suspension with peroxide and then heated it. Spectral examinations show that the PL and PL excitation spectra all shift under different excitation wavelengths and at different monitoring wavelengths, respectively. This result illuminates clear evidence for the quantum confine effect of the Si nanocrystals. We suggest that the surfaces of the Si nanocrystals are covered by SiO2 after treated by peroxide, which leads to the currently observed blue PL phenomenon. (C) 2007 Elsevier B.V. All rights reserved.
Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation

D Zhou,T Xu,Y Lambert,Cristini-Robbe,D Stiévenard

DOI: https://doi.org/10.1166/jnn.2015.10897

Abstract:The light absorption of polysilicon planar junctions can be improved using nanostructured top surfaces due to their enhanced light harvesting properties. Nevertheless, associated with the higher surface, the roughness caused by plasma etching and defects located at the grain boundary in polysilicon, the concentration of the recombination centers increases, leading to electrical performance deterioration. In this work, we demonstrate that wet oxidation combined with hydrogen passivation using SiN(x):H are the key technological processes to significantly decrease the surface recombination and improve the electrical properties of nanostructured n(+)-i-p junctions. Nanostructured surface is fabricated by nanosphere lithography in a low-cost and controllable approach. Furthermore, it has been demonstrated that the successive annealing of silicon nitride films has significant effect on the passivation quality, resulting in some improvements on the efficiency of the Si nanostructure-based solar cell device.
Electro-Luminescence from Un-Doped and Doped Nanocrystalline Si/Sio2 Multilayers

D. Y. Wei,T. Wang,H. C. Sun,Y. Liu,D. Y. Chen,J. Xu,Z. Y. Ma,K. J. Chen

DOI: https://doi.org/10.1109/group4.2008.4638119

2008-01-01

Abstract:Electroluminescence devices based on nanocrystalline Si/SiO2 multilayers were fabricated and the luminescence can be observed both from vertical and lateral direction. Moreover, P-doped nanocrystalline Si/SiO2 multilayers were prepared and the improved electro-luminescence characteristics were achieved.
Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

T. Wang,D. Y. Wei,H. C. Sun,Y. Liu,D. Y. Chen,G. R. Chen,J. Xu,W. Li,Z. Y. Ma,L. Xu,K. J. Chen

DOI: https://doi.org/10.1016/j.physe.2008.08.001

IF: 3.369

2008-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Amorphous-Si:H/SiO2 multilayers were fabricated on various substrates by alternatively changing the ultra-thin amorphous Si films deposition and in situ plasma oxidation processes. Uniform silicon nanodots with controllable size were formed by combining the rapid thermal annealing and furnace annealing techniques as revealed by cross-sectional transmission electron microscopy. Light-emitting diodes based on Al/(nc-Si/SiO2) multilayers/Si substrate/Al structures were fabricated and electrically driven luminescence was demonstrated at room temperature. It was found that the substrate had a significant impact on the carrier injection efficiency and the luminescence intensity. The turn-on voltages of the device on p+-Si and p-Si substrate were 2.2 and 8V, respectively. Meanwhile, electroluminescence intensity of the device on p+-Si substrate was five times higher than that on p-Si substrate under the same power supply, which means the heavily doped substrate is helpful for enhancing the carrier injection efficiency.
Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Guohua Shi,Gang Xu,Gaorong Han

DOI: https://doi.org/10.1016/j.matlet.2006.04.080

IF: 3

2007-01-01

Materials Letters

Abstract:Nanocrystalline Si-rich silicon oxide films were deposited using plasma enhanced chemical vapor deposition technique with the mixture of silane (SiH4), nitrous oxide (N2O) and hydrogen (H-2) as gas source on quartz glass substrate at the substrate temperature of 300 degrees C. The effect of the ratio N2O/SiH4 on the oxidation, microstructures and photoluminescence (PL) of the as-deposited Si-rich silicon oxide films was investigated with FTIR, XRD and HRTEM. The results reveal that with the increasing ratio of N2O/SiH4, more amounts of oxygen are incorporated in the as-deposited films and more nanosized silicon particles are embedded in the films, forming nanocrystalline Si-rich silicon oxide films. The quantum confinement effect or the cooperation of quantum confinement and luminescence center results in the nanocrystalline Si-rich silicon oxide films of higher PL intensity. (c) 2006 Elsevier B.V. All rights reserved.
Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Yanli Li,Peipei Liang,Zhigao Hu,Shuang Guo,Hua Cai,Feiling Huang,Jian Sun,Ning Xu,Jiada Wu

DOI: https://doi.org/10.1016/j.apsusc.2014.09.123

IF: 6.7

2014-01-01

Applied Surface Science

Abstract:The effects on the photoluminescence (PL) from Si nanocrystals embedded in a SiO2 matrix (Si-NCs/SiO2) by annealing in air have been examined, and the correlation between the PL properties and the pas sivation of luminescence-quenching defects at the Si nanocrystal/SiO2 interface has been studied. Si-NCs/SiO2 were fabricated by annealing amorphous silicon suboxide (a-SiOx) in a N-2 atmosphere at 1100 degrees C and the passivation of Si-NCs/SiO2 was performed by annealing Si-NCs/SiO2 in air at temperatures ranging from 400 to 800 degrees C for varied times. The heating of Si-NCs/SiO2 in air is very effective for passivating dangling bonds and an enhancement about 5 times in PL intensity was obtained. High-temperature passivation in air is accompanied by oxidation of Si nanocrystals. Additional N2-treatment of the passivated SiNCs/SiO2 at elevated temperatures depassivates Si-NCs/SiO2, generating new dangling bonds which can also be pas sivated in the subsequent repassivation process. The effect of pas sivation on the PL intensity is reversible, while high-temperature pas sivation results in an irreversible blue shift of PL spectra. PL decay time can be indicative of passivating or generating of dangling bonds. (C) 2014 Elsevier B.V. All rights reserved.
Effect of annealing on photoluminescence of passivated porous silicon

Yue Zhao,Dongsheng Li,Wenbin Sang,Deren Yang

DOI: https://doi.org/10.1016/j.sse.2006.08.013

IF: 1.916

2006-01-01

Solid-State Electronics

Abstract:Photoluminescence (PL) of annealed porous silicon (PS) without and with nitrogen passivation has been investigated. The un-nitridated PS emits intense blue and green light, while that with passivation, emits only blue light and its intensity increases obviously. It is found that the PL intensity of the nitrified PS decreases with increasing temperature from 300°C to 700°C, but increases drastically after annealing at 800°C and 900°C, which might be due to the formation of Si–N bonds that passivates the non-radiative centers (Si dangling bonds) on the surface of PS samples. However, the intensity of the un-nitridated PS decreases continuously with increasing temperature from 300°C to 900°C, which might be due to desorption of hydrogen.
Hydrogen-Induced Recovery Of Photoluminescence From Annealed A-Si : H/A-Sio2 Multilayers

Yunjun Rui,Deyuan Chen,Jun Xu,Yongjun Zhang,Ling Yang,Jiaxin Mei,Zhongyuan Ma,Zhanhong Cen,Wei Li,Ling Xu,XinFan Huang,Kunji Chen

DOI: https://doi.org/10.1063/1.2001747

IF: 2.877

2005-01-01

Journal of Applied Physics

Abstract:a-Si:H/SiO2 multilayers prepared by plasma-enhanced chemical-vapor deposition exhibit a luminescence band around 760 nm, which is quenched after a dehydrogenation process. Subsequent hydrogen plasma annealing (HPA) treatments are carried out, and the luminescence is then recovered. The effects of HPA are investigated as functions of hydrogen annealing time and temperature. Fourier transform infrared spectroscopy and Raman-scattering spectroscopy are used to study the change of the microstructures and bonding configurations due to the HPA treatments. It is indicated that the atomic hydrogen cannot only diffuse into the film to reduce the density of nonradiative recombination centers but can also relax the film network and improve the microstructure order of the a-Si:H sublayers. All these factors are believed to contribute to the recovery of the luminescence signals of the a-Si:H/SiO2 multilayers. (c) 2005 American Institute of Physics.
On the passivation mechanism of poly-silicon and thin silicon oxide on crystal silicon wafers

Zhe Rui,Yuheng Zeng,Xueqi Guo,Qing Yang,Zhixue Wang,Chunhui Shou,Waner Ding,Jie Yang,Xinyu Zhang,Qi Wang,Hao Jin,Mingdun Liao,Shihua Huang,Baojie Yan,Jichun Ye

DOI: https://doi.org/10.1016/j.solener.2019.10.064

IF: 7.188

2019-12-01

Solar Energy

Abstract:A systematic study on the passivation quality using various poly-Si/SiOx bi-layers on c-Si is carried. We find that no any passivation effect is observed with undoped a-Si:H/SiOx and as-crystallized poly-Si/SiOx, a hydrogenation improves the passivation noticeably to reach iVoc of 733 mV. These observations imply that the chemical passivation by the undoped poly-Si/SiOx occurs only after the effective hydrogenation. The passivation with doped poly-Si/SiOx layers shows different behaviors. The n+-poly-Si already shows a reasonable good passivation with iVoc of 715 mV and 685 mV on the n-type and p-type wafers, respectively, after the crystallization without hydrogenation, and the hydrogenation improves the iVoc to 747 mV and 736 mV. The p+-poly-Si shows a poorer passivation quality than both the undoped poly-Si and n+-poly-Si, with the iVoc of 690 mV and 640 mV on the n-type and p-type c-Si wafers after the crystallization, respectively, and 707 mV and 670 mV after the hydrogenation. It concludes that the field passivation appears immediately after the crystallization, and an effective hydrogenation improves the passivation quality further. The passivation quality with the p+-poly-Si is poorer than the n+-poly-Si, which is speculatively caused by the higher interface recombination in the SiOx/c-Si region because of the higher capture cross section for electrons than holes and by additional Shockley-Read-Hall recombination through BO complex defects.

energy & fuels
Influence of Hydrogen and Oxygen on Porous Silicon Light Emission

SL Zhang,FM Huang,L Jia,JJ Li,SM Cai,ZF Liu

1995-01-01

Abstract:The effect of oxygen and hydrogen on the photoluminescence intensity of porous silicon was examined. The results indicate that the presence of oxygen is necessary for visible light emission. In contrast, high hydrogen passivation is unfavorable for visible light emission.
High-pressure Ar Passivation to Enhance the Photoluminescence of Si Nanocrystals

Shuai Li,Yu-Chen Zhang,Chi Zhang,Xi-Yuan Dai,Zhi-Yuan Yu,Fei Hu,Jadam Liu,Jian Sun,Ming Lu

DOI: https://doi.org/10.1016/j.physe.2021.114680

IF: 3.369

2021-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Photoluminescence (PL) enhancement of Si nanocrystals (Si?NCs) embedded in SiO2 matrix by high-pressure (30 bar) Ar passivation at moderately high temperatures has been observed. For the same pressure, time and temperature of passivation, the PL enhancement of Si?NCs for the Ar passivated sample is even larger than that for the regular H2 passivated one. Electron paramagnetic resonance (EPR) measurement shows that highpressure Ar passivation causes more reduction in density of dangling bonds which are non-radiative recombination centers, than the regular H2 one. Elemental depth profile analysis shows deep diffusion of Ar atoms into the sample after Ar passivation. The depth profile of PL enhancement after Ar passivation correlates properly with the Ar depth distribution. This effect of inert gas passivation also holds for the case of Kr passivation. The mechanism of such an effect could be that Ar atoms inside the sample alter Si dangling bonds into paired Si ones by a kind of annealing process of thermal atomic collision.

Hydrogen Passivation Effect On Enhanced Luminescence From Nanocrystalline Si/Sio2 Multilayers

Enhancement and Stability of Photoluminescence from Si Nanocrystals Embedded in A Sio2 Matrix by H-2-Passivation

Enhanced Electroluminescence from Si Quantum Dots-Based Light-Emitting Devices with Si Nanowire Structures and Hydrogen Passivation

Effects of O, H and N passivation on photoluminescence from porous silicon

Influence of hydrogen passivation on the luminescence of Si quantum dots embedded in Si3Nx

Effects of hydrogen plasma annealing on the luminescence from a-Si:H/SiO2 and nc-Si/SiO2 multilayers

Characteristics of Luminescent Nc-Si/sio 2 Multilayers and the Influence of Annealing in Hydrogen

Enhanced Luminescence from Si Quantum Dots/sio2 Multilayers by Hydrogen Annealing

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Effective Passivation on Si Nanocrystal Surface by Peroxide

Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation

Electro-Luminescence from Un-Doped and Doped Nanocrystalline Si/Sio2 Multilayers

Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Effect of annealing on photoluminescence of passivated porous silicon

Hydrogen-Induced Recovery Of Photoluminescence From Annealed A-Si : H/A-Sio2 Multilayers

On the passivation mechanism of poly-silicon and thin silicon oxide on crystal silicon wafers

Influence of Hydrogen and Oxygen on Porous Silicon Light Emission

High-pressure Ar Passivation to Enhance the Photoluminescence of Si Nanocrystals