Influence of Hydrogen and Oxygen on Porous Silicon Light Emission

SL Zhang,FM Huang,L Jia,JJ Li,SM Cai,ZF Liu

1995-01-01

Abstract:The effect of oxygen and hydrogen on the photoluminescence intensity of porous silicon was examined. The results indicate that the presence of oxygen is necessary for visible light emission. In contrast, high hydrogen passivation is unfavorable for visible light emission.

What problem does this paper attempt to address?

The Influence Of Chemical Oxidation On Surface State And Photoluminescence Of Porous Silicon

Li Jingjian,Diao Peng,Cai Shengmin,Hou Yongtian,Wang Xin,Zhang Shulin

DOI: https://doi.org/10.3866/PKU.WHXB19940814

1994-01-01

Acta Physico-Chimica Sinica

Abstract:The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were examined. With the increase of oxidizing duration. the relative amount of the Si-H-2 surface species on PS decreases even though the photoluminescence intensity increases, the result suggests that it isn't SiH2 but Si O and Si-O-Si on the interface of PS play a key role in enhancing the photoluminescence. A complete photoluminescence mechanism should consider the influence of surface state of porous silicon based on the quantum confinement effect model.
The Influence of Microstructure on Optical Properties of Porous Silicon

Yue Zhao,Dongsheng Li,Wenbin Sang,Deren Yang,Minhua Jiang

DOI: https://doi.org/10.1016/j.sse.2007.02.042

IF: 1.916

2007-01-01

Solid-State Electronics

Abstract:The photoluminescence (PL) of as prepared porous silicon (PS) etched in different time were studied. The variation of PS blue emission was similar with that of Si complexes vibration mode on PS surface so blue emission may be related to the defect states of surface Si complexes and hydrogen atoms on PS surface can remove irradiative centers and result in increasing PL intensity. The peak centered at 570nm may be associated to the emission of porous polycrystalline silicon in PS surface, which can be proved by X-ray powder diffraction (XRD) and electron diffraction (ED) methods.
Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Yue Zhao,Dongsheng Li,Wenbin Sang,Deren Yang,Minhua Jiang

DOI: https://doi.org/10.1142/s0217984907014401

2007-01-01

Modern Physics Letters B

Abstract:We presented fluorescence spectra and cathode-luminescence spectra of as-prepared porous silicon under different preparation conditions. The luminescence of porous silicon may be related to the luminescent centers on porous silicon surface. The luminescent efficiency depended on the porosity of porous silicon, which further depended on the oxidative level of porous silicon with metal assistance. Under back illumination, the higher the oxidative degree of the metal is, the higher is the porosity and the luminescent efficiency of porous silicon. But under front illumination, the results exhibited an opposite tendency, which can be explained by the formation theory of PS.
A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

Yue Zhao,Dongsheng Li,Shuoxiang Xing,Wenbin Sang,Deren Yang,Minhua Jiang

DOI: https://doi.org/10.1016/j.ssc.2007.05.030

IF: 1.934

2007-01-01

Solid State Communications

Abstract:In this paper, Cathodoluminescence and Photoluminescence in porous silicon prepared by different etching times were reported. The Cathodoluminescence emission may originate from the presence of hydrogen atoms in oxide phase, which is reduced by electron beam irradiation, but the Photoluminescence emission may be associated with the defects in dioxide in porous silicon surface, which can be proved by scanning electron microscopy images, Fourier transform infrared spectra and Raman spectra. Under electron beam irradiation, the degradation of Cathodoluminescence intensity from as-prepared sample is attributed to hydrogen-atom desorption from porous silicon surface or destruction of irradiative center on porous silicon surface. During electron-beam radiation, the stabilization of Cathodoluminescence emission of the samples, which are post treated by electron beam exposure for 60 s and then aged for 2 min, is due to the protection of surface oxidized layer generated from electron beam heating. (c) 2007 Elsevier Ltd. All rights reserved.
Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Yue Zhao,Dong-Sheng Li,Wen-Bin Sang,De-Ren Yang,Min-Hua Jiang

DOI: https://doi.org/10.1142/s0217984908015280

2008-01-01

Modern Physics Letters B

Abstract:In this paper, the microstructure of porous silicon was discussed by scanning electron microscopy and Raman spectra. The compositions of the samples were studied by Xray diffraction and electron diffraction. The luminescent properties of porous silicon were explored by the PL measurements. The results showed that the structure of the top porous silicon prepared by epitaxial silicon consists of meso-pores and that of the underlying porous silicon consists of macro-pores. Furthermore, the structure of porous silicon prepared by heavily doped silicon is made of nano-pores. The composition of porous silicon consists of the single-crystal phase, poly-crystal phase and amorphous-crystal phase, respectively. In addition, the luminescence of porous silicon may come from the defects on the silicon-rod surface and in Si complexes including siloxene, Si oxide and Si hydrides, and may not be related to amorphous phase and nano-phase.
Effect of post-treatment processes on the photoluminescence of porous silicon

Yue Zhao,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1016/j.physb.2005.04.010

2005-01-01

Abstract:Photoluminescence (PL) of the porous silicon post treated in different processes has been investigated. It was found that the age of the PS samples in ambient air and in dry air could greatly enhance the intensity of PL band at 570nm and appeared a new blue emission band. Furthermore, the water and ethanol could stabilize the long-wavelength emission and enhance the short-wavelength emission because the molecules of water and alcohol were adsorbed on the surface of PS samples, which change the defects in the silicon oxide on the surface of the samples. The thermal oxidation at low-temperature situation could form a thin and imperfect oxide layer on the surface of PS samples, which also change the defect types on the surface of PS samples and change the emission band. The metal ions could form the ion molecule complexes with species of the surface of PS samples so that the emission characteristics of the samples immersed in chloride salt solution changed.
PHOTOLUMINESCENCE OF POROUS SILICON PROCESSED IN H2O2 UNDER ILLUMINATION

LIN JUN,ZHANG LI-ZHU,ZHANG BO-RUI,ZONG BO-QING,QIN GUO-GANG,XU ZHEN-HUA

DOI: https://doi.org/10.7498/aps.43.646

1994-01-01

Abstract:The photoluminescence (PL) intensity of porous silicon in H2O2 under illtimina-tion increases first, and then decreases with increasing processing time, and the PL intensity reaches its maximum when the processing time is one minute. Under illumination in air, the PL degradation of porous silicon without processing is substa-ntia1, but that for the processed porous silicon gets much smaller. The Fourier-transform infrared (FTIR) absorption shows that the localized vibration related to oxygen increases greatly but all kinds of Si-H bonds decrease obviously. Contrasting the variation of the FTIR with that of the PL in the processes, we conclude that the luminescence does not come from the Si-H bonds on the surfaces of porous silicon.
The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Yue Zhao,Dongsheng Li,Wenbin Sang,Deren Yang,Minhua Jiang

DOI: https://doi.org/10.1007/s10853-007-1749-9

IF: 4.5

2007-01-01

Journal of Materials Science

Abstract:Porous silicon (PS) was obtained from n-type (100) mono-crystalline silicon wafers with different metal using two different illumination conditions. The visible photoluminescence (PL) may come from defect-related radiative centers on PS surface and adsorbed hydrogen atoms may be associated to the elimination of irradiative centers on PS surface, which can be proved by the infrared absorption spectra. The metal can be used as catalytic role to increase the etching rate under back illumination, but under front illumination, the metal can cancel light-generated carrier leading to the decrease of etching rate during anodic etching. Furthermore, the change of minority carrier lifetime is opposite to the change of PL efficiency of PS, which can be Confirmed by the results of μ-PCD measurements.
Effect of Laser Illumination on Oxidization of Porous Silicon

Zhang L. Z.,Mao J. C.,Zhang B. R.,Zhu W. X.,He Y. L.,Song H. Z.,Duan J. Q.,Qin G. G.

DOI: https://doi.org/10.1557/proc-283-287

1992-01-01

Abstract:We have studied the effect of laser illumination (argon laser line of 488 nm) on the oxidization process of the inner surfaces of porous silicon (PS) by measuring the photoluminescence (PL), Fourier-transform infrared (FTIR) absorption and x-ray photoelectron spectroscope and contrasted the variations of PL and FTIR spectra of the PS treated in the following four ways: 1. In vacuum with laser illumination (LI) with power density of 12 mW / mm2. 2. In oxygen with LI. 3. In oxygen without LI. The times for all the above three treatments were 1 h. 4. Storage in air for 2 months without LI. The PL peak of PS showed serious degradation and a blue shift in case 2 but only a moderate degradation and no shift in ease 1. The results of FTIR absorption show that the LI in an atmosphere of oxygen enhanced greatly the increase of oxygen-related absorption bands and the decrease of various silicon-hydrogen vibrational mode absorption bands.
Photoluminescence of oxidized porous silicon under UV-light illumination

Yue Zhao,Deren Yang,Dongsheng Li,Minghua Jiang

DOI: https://doi.org/10.1016/j.mseb.2004.08.014

2005-01-01

Abstract:The blue emission resulting from the as-prepared and oxidized porous silicon (PS) was reported in this paper. After the oxidation in plasma enhanced chemical vapor deposition (PECVD) process, the blue emission intensity in photoluminescence (PL) spectra increased because it is believed that the blue emission came from defects in silicon dioxides. Under UV-light illumination, the stability of the blue emission of the N-type oxidized PS was improved due to oxidation.
Annealing and amorphous silicon passivation of porous silicon with blue light emission

Y ZHAO,D YANG,D LI,M JIANG

DOI: https://doi.org/10.1016/j.apsusc.2005.01.176

IF: 6.7

2005-01-01

Applied Surface Science

Abstract:The photoluminescence (PL) of the annealed and amorphous silicon passivated porous silicon with blue emission has been investigated. The N-type and P-type porous silicon fabricated by electrochemical etching was annealed in the temperature range of 700–900°C, and was coated with amorphous silicon formed in a plasma-enhanced chemical vapor deposition (PECVD) process. After annealing, the variation of PL intensity of N-type porous silicon was different from that of P-type porous silicon, depending on their structure. It was also found that during annealing at 900°C, the coated amorphous silicon crystallized into polycrystalline silicon, which passivated the irradiative centers on the surface of porous silicon so as to increase the intensity of the blue emission.
Investigation of the Oxidation Effect of Porous Silicon During Electroluminescence by in Situ FTIR

JJ Li,RQ Wang,ZF Liu,SM Cai,XY Xiao,SG Sun

DOI: https://doi.org/10.1080/10587259908023492

1999-01-01

Abstract:In situ FTIR spectra of porous silicon are measured during electroluminescence (EL). It was found that oxidation process of porous silicon surface occurs during EL, which is the main reason of the EL intensity decrease and red shift of peak energy with time.
The Effect of Selenization and Post-Annealing on the Photoluminescence Property of Porous Silicon

Jianfeng Li,Dexing Li,Jiayou Feng

DOI: https://doi.org/10.1088/0268-1242/23/2/025021

IF: 2.048

2008-01-01

Semiconductor Science and Technology

Abstract:The effect of selenization and post-annealing treatment on the visible luminescence property of porous silicon has been investigated. Scanning electron microscopy and x-ray photon spectroscopy were employed to analyze the surface morphology and composition, respectively. Due to the passivation of Si–Se bonds on the surface, the photoluminescence intensity increases significantly with the increasing selenized temperature, and the photoluminescence stability is also improved after selenization. Furthermore, post-annealing of selenized porous silicon at appropriate temperature can enhance the photoluminescence behaviors.
Luminescence and photoconductivity properties of porous polycrystalline silicon

Yue Zhao,Dong-sheng Li,Jie Zhao,Wen-bin Sang,De-ren Yang,Min-hua Jiang

DOI: https://doi.org/10.1016/j.cap.2007.08.006

IF: 2.856

2008-01-01

Current Applied Physics

Abstract:In recent years, the photoluminescence and the photoconductivity of porous silicon were comprehensively studied. But the photoluminescence and the photoconductivity of porous polycrystalline silicon have not been wholely studied. In this paper, the results showed that luminescent property of the samples prepared by poly-crystal silicon wafers may be related to the defects on Si complexes surface, which can be proved by microwave-detected photoconductivity decay measurements. Furthermore, the luminescence of samples was disappeared under the external illumination, which may be related to the elimination of luminescent-centers. In addition, the conductivities of the samples were dependent on etched time and current density, and the large porosity of samples led to isotropic photoconductivity, which may be related to the change of energy band structure of the devices.
Effect of annealing on photoluminescence of passivated porous silicon

Yue Zhao,Dongsheng Li,Wenbin Sang,Deren Yang

DOI: https://doi.org/10.1016/j.sse.2006.08.013

IF: 1.916

2006-01-01

Solid-State Electronics

Abstract:Photoluminescence (PL) of annealed porous silicon (PS) without and with nitrogen passivation has been investigated. The un-nitridated PS emits intense blue and green light, while that with passivation, emits only blue light and its intensity increases obviously. It is found that the PL intensity of the nitrified PS decreases with increasing temperature from 300°C to 700°C, but increases drastically after annealing at 800°C and 900°C, which might be due to the formation of Si–N bonds that passivates the non-radiative centers (Si dangling bonds) on the surface of PS samples. However, the intensity of the un-nitridated PS decreases continuously with increasing temperature from 300°C to 900°C, which might be due to desorption of hydrogen.
Relationships Between Photoluminescence Spectra and Porosity of Porous Silicon

Song H. Z.,Zhang L. Z.,Zhang B. R.,Qin G. G.

DOI: https://doi.org/10.1557/proc-332-495

1994-01-01

Abstract:It was found that porous silicon (PS) layers formed on 0.01 Ωcm (111) and 0.02 Ωcm (100) Si substrates show high photoluminescence (PL) peak energies on both lower and higher porosity sides and a minimum of PL peak energy at the moderate porosity, while those formed on 0.8 and 10Ωcm (111) p-type Si substrates show an increase of PL peak energy with porosity on the lower side and a saturation of PL peak energy with porosity on the higher side. These experimental facts are not consistent with the quantum confinement model for light emission of PS, which predicts a monotonous increase of PL peak energy with PS porosity.
Photoluminescence (PL) of porous silicon (PS) processed in H2O2 under illumination

Jun Lin,Lizhu Zhang,Borui Zhang,Baiqing Q. Zong,Guogang Qin,Zhenhua Xu

1994-01-01

Abstract:The PL intensity increases at first, then, decreases with the increase of processing time and reaches its maximum value after one minute processing. Under the laser illumination in air, the PL degradation rate of PS processed in H2O2 is substantially less than the one of unprocessed PS. The experimental results from Fourier transform infrared (FTIR) absorption showed that the localized vibration related to oxygen increases greatly, in contrast, all kinds of Si-H bonds decrease obviously. Hence it was concluded that the luminescence does not come from the Si-H bonds on the surface of porous silicon.
Effects of O, H and N passivation on photoluminescence from porous silicon

Z.H. Xiong,L.S. Liao,S. Yuan,Z.R. Yang,X.M. Ding,X.Y. Hou

DOI: https://doi.org/10.1016/S0040-6090(00)01887-3

IF: 2.1

2001-01-01

Thin Solid Films

Abstract:A simple but effective passivation method for porous silicon (PS) has been developed. Immersion of as-etched PS in dilute (NH4)2S/C2H5OH solution followed by ultraviolet light irradiation in air can lead to an enhancement of photoluminescence (PL) up to more than 20 times. Infrared absorption and Auger electron spectroscopic measurements show that the formation of SiH(O3), SiOSi and SiN bonds are formed during the post-treatment process. However, the PL intensity cannot be enhanced if the solution-treated sample is exposed to the laser beam in vacuum. It is thus concluded, that the PL enhancement can be attributed to the presence of compact passivation films consisting of the oxides and the nitride on both external and internal surfaces of the sponge-like PS samples.
Photoluminescence of Ozone Oxidized and Hf Etched Porous Silicon and the Multiple Source Quantum Well Model

L Jia,SP Wong,IH Wilson,SK Hark,SL Zhang,ZF Liu,SM Cai

DOI: https://doi.org/10.1063/1.119902

IF: 4

1997-01-01

Applied Physics Letters

Abstract:Porous silicon (PS) samples were alternately oxidized in an ozone atmosphere and etched in HF solution. The variation of the corresponding photoluminescence (PL) implies that there is more than one origin responsible for the PL of PS. These results are explained by a multiple source quantum well model, where the nanoscale Si units and their covering oxide layers both contribute to the PL in different situations.
IMPROVING THE STABILITY OF POROUS SILICON PHOTOLUMlNESCENCE BY DAMP OXIDATION

CHEN HUA-JIE,ZHANG FU-LONG,FAN HONG-LEI,CHEN XI-YING,HUANG DA-MING,YU MING-REN,HOU XIAO-YUAN,LI GU-BO

DOI: https://doi.org/10.7498/aps.45.297

IF: 0.906

1996-01-01

Acta Physica Sinica

Abstract:The bright and stable porous silicon have been obtained by using damp oxidation at moderate temperature. EPR measurements showed that the density of Si dangling bonds in the sample is lower than that by dry oxidation. We also took FTIR measurements and concluded that the stabilization of the photoluminescence from porous silicon is due to the formation of SiH(O3), SiH(SiO2) and SiH(O2) structure.

Influence of Hydrogen and Oxygen on Porous Silicon Light Emission

The Influence Of Chemical Oxidation On Surface State And Photoluminescence Of Porous Silicon

The Influence of Microstructure on Optical Properties of Porous Silicon

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Effect of post-treatment processes on the photoluminescence of porous silicon

PHOTOLUMINESCENCE OF POROUS SILICON PROCESSED IN H2O2 UNDER ILLUMINATION

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Effect of Laser Illumination on Oxidization of Porous Silicon

Photoluminescence of oxidized porous silicon under UV-light illumination

Annealing and amorphous silicon passivation of porous silicon with blue light emission

Investigation of the Oxidation Effect of Porous Silicon During Electroluminescence by in Situ FTIR

The Effect of Selenization and Post-Annealing on the Photoluminescence Property of Porous Silicon

Luminescence and photoconductivity properties of porous polycrystalline silicon

Effect of annealing on photoluminescence of passivated porous silicon

Relationships Between Photoluminescence Spectra and Porosity of Porous Silicon

Photoluminescence (PL) of porous silicon (PS) processed in H2O2 under illumination

Effects of O, H and N passivation on photoluminescence from porous silicon

Photoluminescence of Ozone Oxidized and Hf Etched Porous Silicon and the Multiple Source Quantum Well Model

IMPROVING THE STABILITY OF POROUS SILICON PHOTOLUMlNESCENCE BY DAMP OXIDATION