Abstract:We have previously developed silicon-based light-emitting devices (LEDs) with luminescent erbium (Er)-doped TiO2 (TiO2:Er) films [Yang et al., Appl. Phys. Lett. 100, 031103 (2012)]. In an LED therein, the TiO2:Er film is sandwiched between the ITO film and heavily boron-doped p-type silicon (p+-Si). In this work, we have investigated the electroluminescence (EL) from two LEDs with the TiO2:Er films annealed at 650 and 850 °C, respectively. It is revealed that between the TiO2:Er film and p+-Si, there is an intermediate silicon oxide (SiOx, x ≤ 2) layer and its thickness increases from ∼4 to 8 nm with the increase of annealing temperature from 650 to 850 °C. Interestingly, the thickness of the intermediate SiOx layer is found to exhibit a profound impact on the EL from the LED with the TiO2:Er film on p+-Si. The EL from the LED with the 650 °C-annealed TiO2:Er film is activated only under the forward bias with the positive voltage connecting to the p+-Si substrate. Such EL consists of the oxygen-vacancy-related emissions from TiO2 host and the characteristic visible and ∼1540 nm emissions from the Er3+ ions, while the EL from the LED with the 850 °C-annealed TiO2:Er film can only be enabled by the reverse bias with the negative voltage applied on the p+-Si substrate. Such EL features only the visible and ∼1540 nm emissions from the Er3+ ions. The difference in the EL behaviors of the two LEDs as mentioned above is found to be ascribed to the different electrical conduction mechanisms.

Investigation of the Oxidation Effect of Porous Silicon During Electroluminescence by in Situ FTIR

The Influence Of Chemical Oxidation On Surface State And Photoluminescence Of Porous Silicon

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

The Influence of Microstructure on Optical Properties of Porous Silicon

Effect of Laser Illumination on Oxidization of Porous Silicon

Photoluminescence of oxidized porous silicon under UV-light illumination

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

Stable and Intense Blue-Green Emission in Porous Silicon Achieved by Amine Immersion and Rapid Thermal Oxidation

Photoluminescence Peak Energy Evolution for Porous Silicon During Photo-Oxidation and Gamma -Ray Oxidation

Optical Properties And Luminescence Mechanism Of Oxidized Free-Standing Porous Silicon Films

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Effect of post-treatment processes on the photoluminescence of porous silicon

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

The photoluminescence spectra shift of porous silicon by spontaneous oxidation

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Electroluminescence from Tio2/P(+)-Si Heterostructure

Quantum confinement effect in electroluminescent porous silicon

Investigation of photoluminescence mechanisms from porous polysilicon for optoelectronic devices

Microsecond Photoluminescence Decay and Oxidation of Porous Silicon

Passivation of Porous Silicon by Wet Thermal Oxidation

Two kinds of electroluminescence from poroussilicon in electrolyte solutions