The photoluminescence spectra shift of porous silicon by spontaneous oxidation

WU XIAO-WEI, BAO XI-MAO, ZHENG XIANG-QIN, YAN FENG

DOI: https://doi.org/10.7498/aps.43.1203

1994-01-01

Abstract:The light-emission of the porous silicon is an indirect recombination process of the excited electron through the surface states. During spontaneous oxidation new surface states are formed which make the photoluminescence spectra shift.

What problem does this paper attempt to address?

Photoluminescence of oxidized porous silicon under UV-light illumination

Yue Zhao,Deren Yang,Dongsheng Li,Minghua Jiang

DOI: https://doi.org/10.1016/j.mseb.2004.08.014

2005-01-01

Abstract:The blue emission resulting from the as-prepared and oxidized porous silicon (PS) was reported in this paper. After the oxidation in plasma enhanced chemical vapor deposition (PECVD) process, the blue emission intensity in photoluminescence (PL) spectra increased because it is believed that the blue emission came from defects in silicon dioxides. Under UV-light illumination, the stability of the blue emission of the N-type oxidized PS was improved due to oxidation.
Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Yue Zhao,Dong-Sheng Li,Wen-Bin Sang,De-Ren Yang,Min-Hua Jiang

DOI: https://doi.org/10.1142/s0217984908015280

2008-01-01

Modern Physics Letters B

Abstract:In this paper, the microstructure of porous silicon was discussed by scanning electron microscopy and Raman spectra. The compositions of the samples were studied by Xray diffraction and electron diffraction. The luminescent properties of porous silicon were explored by the PL measurements. The results showed that the structure of the top porous silicon prepared by epitaxial silicon consists of meso-pores and that of the underlying porous silicon consists of macro-pores. Furthermore, the structure of porous silicon prepared by heavily doped silicon is made of nano-pores. The composition of porous silicon consists of the single-crystal phase, poly-crystal phase and amorphous-crystal phase, respectively. In addition, the luminescence of porous silicon may come from the defects on the silicon-rod surface and in Si complexes including siloxene, Si oxide and Si hydrides, and may not be related to amorphous phase and nano-phase.
The Influence of Microstructure on Optical Properties of Porous Silicon

Yue Zhao,Dongsheng Li,Wenbin Sang,Deren Yang,Minhua Jiang

DOI: https://doi.org/10.1016/j.sse.2007.02.042

IF: 1.916

2007-01-01

Solid-State Electronics

Abstract:The photoluminescence (PL) of as prepared porous silicon (PS) etched in different time were studied. The variation of PS blue emission was similar with that of Si complexes vibration mode on PS surface so blue emission may be related to the defect states of surface Si complexes and hydrogen atoms on PS surface can remove irradiative centers and result in increasing PL intensity. The peak centered at 570nm may be associated to the emission of porous polycrystalline silicon in PS surface, which can be proved by X-ray powder diffraction (XRD) and electron diffraction (ED) methods.
The Influence Of Chemical Oxidation On Surface State And Photoluminescence Of Porous Silicon

Li Jingjian,Diao Peng,Cai Shengmin,Hou Yongtian,Wang Xin,Zhang Shulin

DOI: https://doi.org/10.3866/PKU.WHXB19940814

1994-01-01

Acta Physico-Chimica Sinica

Abstract:The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were examined. With the increase of oxidizing duration. the relative amount of the Si-H-2 surface species on PS decreases even though the photoluminescence intensity increases, the result suggests that it isn't SiH2 but Si O and Si-O-Si on the interface of PS play a key role in enhancing the photoluminescence. A complete photoluminescence mechanism should consider the influence of surface state of porous silicon based on the quantum confinement effect model.
Luminescence and photoconductivity properties of porous polycrystalline silicon

Yue Zhao,Dong-sheng Li,Jie Zhao,Wen-bin Sang,De-ren Yang,Min-hua Jiang

DOI: https://doi.org/10.1016/j.cap.2007.08.006

IF: 2.856

2008-01-01

Current Applied Physics

Abstract:In recent years, the photoluminescence and the photoconductivity of porous silicon were comprehensively studied. But the photoluminescence and the photoconductivity of porous polycrystalline silicon have not been wholely studied. In this paper, the results showed that luminescent property of the samples prepared by poly-crystal silicon wafers may be related to the defects on Si complexes surface, which can be proved by microwave-detected photoconductivity decay measurements. Furthermore, the luminescence of samples was disappeared under the external illumination, which may be related to the elimination of luminescent-centers. In addition, the conductivities of the samples were dependent on etched time and current density, and the large porosity of samples led to isotropic photoconductivity, which may be related to the change of energy band structure of the devices.
Stabilized Electronic State and Its Luminescence at the Surface of Oxygen-Passivated Porous Silicon

XL Wu,SJ Xiong,DL Fan,Y Gu,XM Bao,GG Siu,MJ Stokes

DOI: https://doi.org/10.1103/physrevb.62.r7759

IF: 3.7

2000-01-01

Physical Review B

Abstract:Photoluminescence (PL) spectra of as-made porous Si samples were obtained in a wide peak-wavelength range. After exposure to air or coupling with C-60 molecules, the PL peak shifts to a pinning wavelength within the range of 610-630 nm. This pinning wavelength is almost independent of the size of the original porous Si nanocrystallites and both redshifting and blueshifting can occur for different sizes. A self-consistent effective-mass calculation shows that the Si=O binding states are responsible for the radiation of this pinning wavelength and the blueshift for the large nanocrystallites is due to the additional potential modulation within the Si nanocrystallite by the long-range Coulomb interaction of oxygen ions.
Photoluminescence Peak Energy Evolution for Porous Silicon During Photo-Oxidation and Gamma -Ray Oxidation

LZ ZHANG,BQ ZONG,BR ZHANG,ZH XU,JQ LI,GG QIN

DOI: https://doi.org/10.1088/0953-8984/7/3/023

1995-01-01

Journal of Physics Condensed Matter

Abstract:The evolution of photoluminescence (PL) from a series of as-anodized porous silicon (PS) samples with peaks in a wide energy range has been investigated systematically during oxidation enhanced by either laser illumination or gamma-ray irradiation. Under both oxidation conditions, PL spectra initially located in the infrared-red region undergo a blue shift, while those initially located in the orange-yellow region experience a red shift. Eventually, all the peaks are pinned at fixed energies which are in an energy range narrower than that for as-anodized PS samples. These experimental results can be explained by the quantum confinement-luminescence centres model, which argues that photoexcitation proceeds in nanoscale silicon and photoemission through the luminescence centres outside nanoscale silicon, and also by assuming that during oxidation the main luminescence centres change from one kind to another and/or the relative contributions to the PL intensity from various kinds of luminescence centres vary.
Effect of post-treatment processes on the photoluminescence of porous silicon

Yue Zhao,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1016/j.physb.2005.04.010

2005-01-01

Abstract:Photoluminescence (PL) of the porous silicon post treated in different processes has been investigated. It was found that the age of the PS samples in ambient air and in dry air could greatly enhance the intensity of PL band at 570nm and appeared a new blue emission band. Furthermore, the water and ethanol could stabilize the long-wavelength emission and enhance the short-wavelength emission because the molecules of water and alcohol were adsorbed on the surface of PS samples, which change the defects in the silicon oxide on the surface of the samples. The thermal oxidation at low-temperature situation could form a thin and imperfect oxide layer on the surface of PS samples, which also change the defect types on the surface of PS samples and change the emission band. The metal ions could form the ion molecule complexes with species of the surface of PS samples so that the emission characteristics of the samples immersed in chloride salt solution changed.
A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

Yue Zhao,Dongsheng Li,Shuoxiang Xing,Wenbin Sang,Deren Yang,Minhua Jiang

DOI: https://doi.org/10.1016/j.ssc.2007.05.030

IF: 1.934

2007-01-01

Solid State Communications

Abstract:In this paper, Cathodoluminescence and Photoluminescence in porous silicon prepared by different etching times were reported. The Cathodoluminescence emission may originate from the presence of hydrogen atoms in oxide phase, which is reduced by electron beam irradiation, but the Photoluminescence emission may be associated with the defects in dioxide in porous silicon surface, which can be proved by scanning electron microscopy images, Fourier transform infrared spectra and Raman spectra. Under electron beam irradiation, the degradation of Cathodoluminescence intensity from as-prepared sample is attributed to hydrogen-atom desorption from porous silicon surface or destruction of irradiative center on porous silicon surface. During electron-beam radiation, the stabilization of Cathodoluminescence emission of the samples, which are post treated by electron beam exposure for 60 s and then aged for 2 min, is due to the protection of surface oxidized layer generated from electron beam heating. (c) 2007 Elsevier Ltd. All rights reserved.
Photoluminescence of Sm Doped Porous Silicon—evidence for Light Emission Through Luminescence Centers in SiO2 Layers

J LIN,LZ ZHANG,YM HUANG,BR ZHANG,GG QIN

DOI: https://doi.org/10.1063/1.111310

IF: 4

1994-01-01

Applied Physics Letters

Abstract:After oxidation promoted by gamma-ray irradiation, in the photoluminescence (PL) spectra of Sm doped porous silicon (PS), there are three sharp peaks, superimposed on a broad band, with wavelengths near to those of the Sm doped SiO2 [R. Morimo, T. Mizushima, and H. Okumura, J. Electrochem. Soc. 137, 2340 (1990)]. The experimental results indicate that Sm-related luminescence centers can be created within the oxide of porous silicon, and only in porous silicon with high porosity can the Sm-related luminescence be found in the SiO2 layer. This experimental result can be explained by the fact that the excitation of electron-hole pairs occurs in nanoscale silicon, and the recombination occurs at the Sm-related luminescence centers in SiO2 layers covering nanoscale silicon.
LUMINESCENCE BEHAVIOR AND MECHANISM OF LIGHT-EMITTING POROUS SILICON

XUN WANG

DOI: https://doi.org/10.1142/s021798499400008x

1994-01-01

Modern Physics Letters B

Abstract:In this review article, we give a new insight into the luminescence mechanism of porous silicon. First, we observed a “pinning” characteristic of photoluminescent peaks for as-etched porous silicon samples. It was explained as resulting from the discontinuous variation of the size of Si nanostructures, i.e. the size quantization. A tight-binding calculation of the energy band gap widening versus the dimension of nanoscale Si based on the closed-shell Si cluster model agrees well with the experimental observations. Second, the blue-light emission from porous silicon was achieved by using boiling water treatment. By investigating the luminescence micrographic images and the decaying behaviors of PL spectra, it has been shown that the blue-light emission is believed to be originated from the porous silicon skeleton rather than the surface contaminations. The conditions for achieving blue light need proper size of Si nanostructures, low-surface recombination velocity, and mechanically strong skeleton. The fulfillment of these conditions simultaneously is possible but rather critical. Third, the exciton dynamics in light-emitting porous silicon is studied by using the temperature-dependent and picosecond time-resolved luminescence spectroscopy. A direct evidence of the existence of confined excitons induced by the quantum size effect has been revealed. Two excitation states are found to be responsible for the visible light emission, i.e. a higher lying energy state corresponding to the confined excitons in Si nanostructures and a lower lying state related with surfaces of Si wires or dots. A picture of the carrier transfer between the quantum confined state and the surface localized state has been proposed. Finally, we investigated the transient electroluminescence behaviors of Au/porous silicon/Si/Al structure and found it is very similar to that of an ordinary p-n junction light-emitting diode. The mechanism of electroluminescence is explained as the carrier injection through the Au/porous silicon Schotky barrier and the porous silicon/p-Si heterojunction into the corrugated Si wires, where the radiative recombination of carriers occurs.
Microsecond Photoluminescence Decay and Oxidation of Porous Silicon

HZ Song,GG Qin,DC Yao,ZJ Chen,XM Bao

DOI: https://doi.org/10.1016/s0038-1098(97)00097-5

IF: 1.934

1997-01-01

Solid State Communications

Abstract:The microsecond Photoluminescence decay of as-prepared porous silicon varies from sample to sample, but atmospheric oxidation at 200°C for 200 h gives rise to exactly identical exponential distribution of decay time with luminescence energy for any porous silicon sample. Discussion is made to demonstrate that we observe the characteristic photoluminescence decay and the related parameters for oxidized porous silicon.
Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Yue Zhao,Dongsheng Li,Wenbin Sang,Deren Yang,Minhua Jiang

DOI: https://doi.org/10.1142/s0217984907014401

2007-01-01

Modern Physics Letters B

Abstract:We presented fluorescence spectra and cathode-luminescence spectra of as-prepared porous silicon under different preparation conditions. The luminescence of porous silicon may be related to the luminescent centers on porous silicon surface. The luminescent efficiency depended on the porosity of porous silicon, which further depended on the oxidative level of porous silicon with metal assistance. Under back illumination, the higher the oxidative degree of the metal is, the higher is the porosity and the luminescent efficiency of porous silicon. But under front illumination, the results exhibited an opposite tendency, which can be explained by the formation theory of PS.
Photoluminescence and Raman Spectroscopy Study on Oxidized Free-Standing Porous Si

ST Wang,DS Xu,GL Guo,GG Qin

DOI: https://doi.org/10.1002/1521-396x(200011)182:1<359::aid-pssa359>3.0.co;2-8

2000-01-01

Abstract:Photoluminescence and Raman scattering spectra were used to study three types of free-standing porous Si: as-grown samples with various porosities referred to as APS samples, these samples oxidized in air at 200 degreesC fur 200 h as OPS samples, and these samples aged further in air at room temperature for 20 months as AOPS samples. The PL peak energies of OPS and AOPS samples have shifted in small energy ranges centered at about 1.61 and 1.59 eV, respectively. Each Raman spectrum was fitted with an amorphous and a crystalline component. The crystalline component was used to determine the sizes of nanometer Si particles (NSPs), which were in ranges of 2.5-2.2 and 3.3-2.3 nm in OPS and AOPS samples, respectively. The reason why OPS or AOPS samples with different NSP sizes have almost the same FL peak wavelength is discussed with a novel multiple mechanism model.
Photoluminescence Mechanism For Blue-Light-Emitting Porous Silicon

Gg Qin,Xs Liu,Sy Ma,J Lin,Gq Yao,Xy Lin,Kx Lin

DOI: https://doi.org/10.1103/PhysRevB.55.12876

IF: 3.7

1997-01-01

Physical Review B

Abstract:A comparative study of photoluminescence (PL) and photoluminescence excitation (PLE) spectra of porous silicon (PS) and Si oxide, both enlitting blue light, is reported. The PLE spectrum of Si oxide monitored at 160 nm displays a three-peak structure with peak wavelengths around 265, 300, and 360 nm. The PLE intensity of the PS sample increases with decreasing excitation wavelength, and has three shoulders located at wavelengths near the three PLE peak wavelengths of Si oxide. When the PS sample is oxidized for half an hour at 1150C [the temperature at which nanometer Si particles (NSP's) inside PS disappear], blue-light PL intensity reduces greatly, and its PLE spectrum changes into a spectrum very similar to that of Si oxide. The experimental result strongly indicates that for the blue-light emission from PS there are two types of photosxcitation processes: photoexcitation occurs in NSP's and in the Si oxide layers covering NSP's, and radiative recombinntion of electron-hole pairs is carried out in luminescence centers located on the interfaces between NSP's and Si oxide and in those inside Si oxide layers.
Investigation of the Oxidation Effect of Porous Silicon During Electroluminescence by in Situ FTIR

JJ Li,RQ Wang,ZF Liu,SM Cai,XY Xiao,SG Sun

DOI: https://doi.org/10.1080/10587259908023492

1999-01-01

Abstract:In situ FTIR spectra of porous silicon are measured during electroluminescence (EL). It was found that oxidation process of porous silicon surface occurs during EL, which is the main reason of the EL intensity decrease and red shift of peak energy with time.
Enhanced Near-Edge Transitions by Unsaturated Si Atoms in Porous Silicon

HX FU,XD XIE

DOI: https://doi.org/10.1088/0256-307x/12/4/015

1995-01-01

Abstract:The photo-induced transition probability for porous silicon under different surface conditions is studied. The enhanced near-edge transitions for the presence of unsaturated Si atoms at the surface of porous silicon are found. The theoretical results are in good agreement with those obtained in several recent experiments. Based on the calculated results, an effective way to improve the photoluminescence efficiency in porous silicon is provided, and a model about the origin of luminescence in porous silicon is suggested.
MECHANISMS FOR PHOTOLUMINESCENCE FROM NANOSCALE SILICON/SILICON OXIDE SYSTEMS

QIN Guo-Gang

DOI: https://doi.org/10.3321/j.issn:1001-9014.2005.03.002

2005-01-01

JOURNAL OF INFRARED AND MILLIMETER WAVES

Abstract:Most porous silicon samples studied have been oxidized in various degrees. Oxidized porous silicon and the nanoscale silicon particles embedded oxidized silicon have similar structures and luminescence characteristics. Both of them consist of a great quantity of nanoscale silicon particles, each of which is surrounded by an oxidized silicon layer, and can be named as nanoscale silicon/oxidized silicon systems. They are the most strongly studied and very promising silicon-based luminescence materials. In this article, the photoluminescence mechanisms of the nanoscale silicon particles/oxidized silicon systems were summarized and discussed. The related research works finished by our group in Peking university were briefly introduced.
Photoluminescence and Photoluminescence Excitation Mechanisms for Porous Silicon and Silicon Oxynitride

Liu Xingsheng,Calata Jesus Noel,Liang Houyun,Shi Wangzhou,Lin Xuanyin,Lin Kuixun,Qin G. G.

DOI: https://doi.org/10.1557/proc-588-141

1999-01-01

Abstract:Through a comparative study of the light emission and light excitation property of porous silicon (PS) and Si oxide, photoluminescence (PL) and photoluminescence excitation (PLE) mechanisms for blue-light-emitting PS are analyzed. Strong blue light (445nm) and ultraviolet light (365nm) emission from silicon-rich silicon oxynitride films at room temperature were observed. An analysis of the PL and PLE spectra of PS and Si oxide indicated that for blue-light emission from PS, there are two types of photoexcitation processes: photo-excitation occurring in nanometer Si particles (NSP's) and in the Si oxide layers covering NSPs, and radiative recombination of electron-hole pairs taking place in luminescence centers (LCs) located on the interfaces between NSP's and Si oxide and those inside Si oxide layers. The PL spectra of silicon-rich silicon oxynitride films implies that the PL originated from some LCs in SiOx and SiOxNy:H, while PLE spectra indicates that photoexcitation occurs in NSPs, SiOx and SiOxNy:H. The 365 nm band is attributed to the former two photoexcitation processes and the 445 nm one to the third process. As such, the quantum confinement/luminescence center model appears to be a satisfactory model in explaining the experimental results.
Origin of Multiple-Peak Photoluminescence Spectra of Light-Emitting Porous Silicon

Xun Wang,P. H. Hao,Daming Huang,Fulong Zhang,Min Yang,Mingren Yu

DOI: https://doi.org/10.1103/physrevb.50.12230

1994-01-01

Abstract:Multiple-peak structures in photoluminescence spectra of porous silicon are observed in the temperature range of 10--300 K. The peak energies are found to coincide well with the photoluminescence peak pinning energies previously reported. Thus the fine structures of luminescence spectra could be attributed to the size quantization of Si nanostructures formed during the sample preparation. After the sample was stored in atmosphere for six months, the multiple-peak structures in photoluminescence spectra still remain but the line shapes change significantly. The blueshift of the spectra is believed to be due to the variation of size distribution by natural oxidation. The size distribution for the sample showing multiple photoluminescence peaks is much more nonuniform when compared with ordinary samples and it varies from spot to spot. The measured temperature dependencies of the intensities of short-wavelength components show maxima at the temperature around 175 K, while the intensities of long-wavelength components are fairly small and dominate only at low temperatures.

The photoluminescence spectra shift of porous silicon by spontaneous oxidation

Photoluminescence of oxidized porous silicon under UV-light illumination

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

The Influence of Microstructure on Optical Properties of Porous Silicon

The Influence Of Chemical Oxidation On Surface State And Photoluminescence Of Porous Silicon

Luminescence and photoconductivity properties of porous polycrystalline silicon

Stabilized Electronic State and Its Luminescence at the Surface of Oxygen-Passivated Porous Silicon

Photoluminescence Peak Energy Evolution for Porous Silicon During Photo-Oxidation and Gamma -Ray Oxidation

Effect of post-treatment processes on the photoluminescence of porous silicon

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

Photoluminescence of Sm Doped Porous Silicon—evidence for Light Emission Through Luminescence Centers in SiO2 Layers

LUMINESCENCE BEHAVIOR AND MECHANISM OF LIGHT-EMITTING POROUS SILICON

Microsecond Photoluminescence Decay and Oxidation of Porous Silicon

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Photoluminescence and Raman Spectroscopy Study on Oxidized Free-Standing Porous Si

Photoluminescence Mechanism For Blue-Light-Emitting Porous Silicon

Investigation of the Oxidation Effect of Porous Silicon During Electroluminescence by in Situ FTIR

Enhanced Near-Edge Transitions by Unsaturated Si Atoms in Porous Silicon

MECHANISMS FOR PHOTOLUMINESCENCE FROM NANOSCALE SILICON/SILICON OXIDE SYSTEMS

Photoluminescence and Photoluminescence Excitation Mechanisms for Porous Silicon and Silicon Oxynitride

Origin of Multiple-Peak Photoluminescence Spectra of Light-Emitting Porous Silicon