Abstract:In this review article, we give a new insight into the luminescence mechanism of porous silicon. First, we observed a “pinning” characteristic of photoluminescent peaks for as-etched porous silicon samples. It was explained as resulting from the discontinuous variation of the size of Si nanostructures, i.e. the size quantization. A tight-binding calculation of the energy band gap widening versus the dimension of nanoscale Si based on the closed-shell Si cluster model agrees well with the experimental observations. Second, the blue-light emission from porous silicon was achieved by using boiling water treatment. By investigating the luminescence micrographic images and the decaying behaviors of PL spectra, it has been shown that the blue-light emission is believed to be originated from the porous silicon skeleton rather than the surface contaminations. The conditions for achieving blue light need proper size of Si nanostructures, low-surface recombination velocity, and mechanically strong skeleton. The fulfillment of these conditions simultaneously is possible but rather critical. Third, the exciton dynamics in light-emitting porous silicon is studied by using the temperature-dependent and picosecond time-resolved luminescence spectroscopy. A direct evidence of the existence of confined excitons induced by the quantum size effect has been revealed. Two excitation states are found to be responsible for the visible light emission, i.e. a higher lying energy state corresponding to the confined excitons in Si nanostructures and a lower lying state related with surfaces of Si wires or dots. A picture of the carrier transfer between the quantum confined state and the surface localized state has been proposed. Finally, we investigated the transient electroluminescence behaviors of Au/porous silicon/Si/Al structure and found it is very similar to that of an ordinary p-n junction light-emitting diode. The mechanism of electroluminescence is explained as the carrier injection through the Au/porous silicon Schotky barrier and the porous silicon/p-Si heterojunction into the corrugated Si wires, where the radiative recombination of carriers occurs.

Origin of Multiple-Peak Photoluminescence Spectra of Light-Emitting Porous Silicon

Variation of double-peak structure of photoluminescence spectra with excitation wavelength for porous silicon and luminescence mechanism

Variation of Double-Peak Structure in Photoluminescence Spectra from Porous Silicon with Excitation Wavelength

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Double-peak-structured photoluminescence mechanisms of porous silicon

Two-peak Photoluminescence and Light-Emitting Mechanism of Porous Silicon

The Influence of Microstructure on Optical Properties of Porous Silicon

Steplike Behavior of Photoluminescence Peak Energy and Formation of P-Type Porous Silicon

Pinning of Photoluminescence Peak Positions for Light-Emitting Porous Silicon: an Evidence of Quantum Size Effect.

Temperature-dependent Picosecond Time-Resolved Carrier Dynamics in Visible-Light-emitting Porous Silicon

LUMINESCENCE BEHAVIOR AND MECHANISM OF LIGHT-EMITTING POROUS SILICON

Two-band Structure in Photoluminescence Spectra from Porous Silicon and Its Dependence on Excitation Wavelength

On the Origin of the 417 and 437 Nm Double-Peak Emission in Porous Si with Crystallite Sizes Smaller Than 3.0 Nm

Photoluminescence Peak Energy Evolution for Porous Silicon During Photo-Oxidation and Gamma -Ray Oxidation

Stabilized Electronic State and Its Luminescence at the Surface of Oxygen-Passivated Porous Silicon

Photoluminescence studies of porous silicon microcavities

Relationships Between Photoluminescence Spectra and Porosity of Porous Silicon

Microsecond Photoluminescence Decay and Oxidation of Porous Silicon

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

Narrow-Line Light Emission from Porous Silicon Multilayers and Microcavities

PEAK ENERGY FOCUSING OF PHOTOLUMINESCENCE FROM POROUS SILICON DURING STORING IN AIR OR 200℃ THERMAL OXIDATION