Steplike Behavior of Photoluminescence Peak Energy and Formation of P-Type Porous Silicon

SL ZHANG,KS HO,YT HOU,BD QIAN,P DIAO,SM CAI
DOI: https://doi.org/10.1063/1.108881
IF: 4
1993-01-01
Applied Physics Letters
Abstract:The photoluminescence spectra from a series of porous silicon samples formed in HF concentrations at constant current density and fixed forming times, are presented. A novel steplike behavior of photoluminescence peak energy was observed. A formation mechanism based on the quantum confinement of porous Si walls has been proposed to explain the experimental results.
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