Abstract:Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO2) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO2 (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron–hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved.

Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

Light Emitting Devices Based on Nanocrystalline-Silicon Multilayer Structure

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO<sub>2</sub> multilayers

Electro-Luminescence from Un-Doped and Doped Nanocrystalline Si/Sio2 Multilayers

Electroluminescence from nano-crystalline Si/ SiO2 structures embedded in pn junctions

Electroluminescent Devices Based on Amorphous SiN/Si Quantum Dots/amorphous SiN Sandwiched Structures

Improved Emission Efficiency of Electroluminescent Device Containing Nc-Si/sio(2) Multilayers by Using Nano-Patterned Substrate.

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process

Electroluminescence with Micro-Watt Output from Ultra-Small Sized Si Quantum Dots/amorphous SiO2 Multilayers Prepared by Laser Crystallization Method

Porous Nc-Si/siox Nanostructured Layer on Si Substrate with Tunable Photoluminescent Properties Fabricated by Direct, Precursor-Free Microplasma Irradiation in Air

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Fabrication and Luminescence Properties of Si Quantum Dots Based on Si-Rich Sinx/N-Rich Siny Multilayer

Si nanocrystals-based multilayers for luminescent and photovoltaic device applications

Formation and properties of high density Si nanodots

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Formation of a Single-Layer Si Nanostructure and Its Luminescence Characteristics

Comparative Study of Electroluminescence from Annealed Amorphous Sic Single Layer and Amorphous Si/Sic Multilayers

The Effect Of Laser Crystallization On The Carrier Transport And Electroluminescence From Nanocrystalline Si/Sio2 Multilayers