Abstract:Through a series of processes involving active oxidation, hydrofluoric etching, and hydrosilylation, Si QDs exhibit a photoluminescence quantum yield (PL QY) of 60.3%. Additionally, Si QDs with the highest PL QY are chosen as the material for the emitting layer in light‐emitting diode (LED) devices, which show electroluminescence with an external quantum efficiency (EQE) of 13.2%. Tunable emission wavelength and excellent biocompatibility have positioned silicon quantum dots (Si QDs) as important optoelectronic materials in areas like displays, lighting, and biomedical imaging. However, the challenges of low luminescence efficiency impede the utilization of Si QDs, restraining the advancement of Si QDs‐based light‐emitting diode (LED) devices. This study primarily concentrates on optimizing the surface structure of Si QDs and refining the Si QDs‐based LED device structures. A strategy involving active oxidation followed by hydrofluoric etching and hydrosilylation is proposed to enhance the optical characteristics of Si QDs. A variety of characterization methods are employed to evaluate the impact of the active oxidation on the photoluminescence and surface structures of Si QDs. This approach ultimately achieves an impressive enhancement in the photoluminescence quantum yield (PL QY) of Si QDs from 6.7% to 60.3%. Furthermore, the atmospherically oxidized Si QDs with the highest PL QY are selected as the emitting‐layer material to fabricate LEDs with the structure of ITO/PEDOT:PSS/TFB/Si QDs/ZnMgO/Ag. The introduction of ZnMgO effectively balances charge injection in the Si‐QDs‐based LEDs. As a result, the devices achieve electroluminescence with an external quantum efficiency of 13.2%.

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