Abstract:Despite the technological importance of silicon quantum dots (Si QDs) which are solely made of abundant and nontoxic Si, Si-QD light-emitting diodes (LEDs) clearly lag behind those based on other QDs, especially Cd- or Pb-containing QDs. It is imperative that novel measures should be taken to boost the performance of Si-QD LEDs. Here, we demonstrate that Si-QD LEDs can work much more efficiently after the use of interlayers between indium tin oxide (ITO) and poly(ethylene-dioxythiophene): polystyrene sulphonate (PEDOT:PSS) to enhance the hole transport of the devices. The interlayer of dipyrazino (2, 3-f: 2 ', 3 ' -h) quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) or MoO3 increases the work function of ITO and improves the band alignment, leading to better hole injection from ITO to PEDOT: PSS. The resulting mitigated charge unbalance causes both the external quantum efficiency (EQE) and stability of Si-QD LEDs to significantly increase (up to similar to 170% for EQE and similar to 240% for device half-lifetime). The highest EQE of similar to 2.4% obtained in the current work is among the best values that have been reported for Si-QD LEDs. Even without encapsulation, the device half-lifetime is up to similar to 8.5 h. The enhancement of the hole transport induced by MoO3 is more significant than that induced by HAT-CN. Therefore, MoO3 more significantly enhances the performance of Si-QD LEDs than HAT-CN.

Improved Device Performances Based on Si Quantum Dot/si Nanowire Hetero-Structures by Inserting an Al2O3 Thin Layer

Improving Performance of Si/CdS Micro-/Nanoribbon P-N Heterojunction Light Emitting Diodes by Trenched Structure

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Dual Management of Electrons and Photons to Get High‐Performance Light Emitting Devices Based on Si Nanowires and Si Quantum Dots with Al2O3‐Ag Hybrid Nanostructures

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Enhanced Electroluminescence from Si Quantum Dots-Based Light-Emitting Devices with Si Nanowire Structures and Hydrogen Passivation

Enhanced Device Performance of Si Nanowires/si Nanocrystals Heterojunction Solar Cells with Ultrathin Al2O3 Passivation

Al 2 O 3 -Interlayer-enhanced Performance of All-Inorganic Silicon-Quantum-Dot Near-Infrared Light-Emitting Diodes

Advanced Optoelectronic Devices Based on Si Quantum Dots/Si Nanowires Hetero-structures

High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process

Silicon-Quantum-Dot Light-Emitting Diodes with Interlayer-Enhanced Hole Transport

Light Harvesting and Enhanced Performance of Si Quantum Dot/Si Nanowire Heterojunction Solar Cells

Simulation and Experimental Study on Anti-reflection Characteristics of Nano-patterned Si Structures for Si Quantum Dot-Based Light-Emitting Devices

Improved Photovoltaic Properties of Si Quantum Dots/Sic Multilayers-Based Heterojunction Solar Cells by Reducing Tunneling Barrier Thickness

Dramatic reduction of surface recombination by in-situ surface passivation of silicon nanowires

Electroluminescent Devices Based on Amorphous SiN/Si Quantum Dots/amorphous SiN Sandwiched Structures

Manipulating the Band Bending of InGaN/GaN Quantum Dots in Nanowires by Surface Passivation

High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer

Increasing energy barrier between quantum dots for enhancing non-carrier-injection electroluminescence

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Native surface oxidation yields SiC-SiO2 core-shell quantum dots with improved quantum efficiency