Abstract:Quantum dot (QD) light-emitting diodes (QLEDs) have been considered one of the most promising candidates for nextgeneration lighting and displays. However, the suboptimal carrier dynamics at the interface between QDs and the hole transport layer (HTL), such as leakage and quenching induced by the accumulation of electrons at high brightness, severely deteriorates the device's efficiency and stability. Here, we introduced the influence of carrier modulation by nanoshell engineering on the extermal quantum efficiency (EQE) and operation lifetime for QLEDs with large-sized QDs. The shell-driven engineering of energy level positions and band bending effectively eliminates the hole injection barrier and promotes charge injection balance. Photo-assisted Kelvin probe technique reveals that the ZnCdSe/ZnSeS QD/TFB (TFB = poly(9,9-dioctylfluorene-co-N-(4-(3-methylpropyl))diphenylamine)) interface presents an increased surface potential and quasi-Fermi level splitting, reducing heat generation during device operation at high brightness. The shell-driven carrier engineering strategy reveals that our devices exhibit a high external quantum efficiency of 26.44% and an ultralong operation time (exceeding 50,000 h) to 95% of the initial luminance at 1000 cd/m 2 ( T 95 @1000 cd/m 2 ). We anticipate that our results provide insights into resolving the issues at the QDHTL interface and demonstrate the importance of carrier management driven by QD nanostructure tailoring for the commercialization of QLEDs.

Increasing energy barrier between quantum dots for enhancing non-carrier-injection electroluminescence

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

In-Well Ionization from Monolayer Quantum Dots for Non-Carrier-Injection Electroluminescence

Modelling Charge Transport and Electro-Optical Characteristics of Quantum Dot Light-Emitting Diodes

Electrochemically Stable Ligands of ZnO Electron-Transporting Layers for Quantum-Dot Light-Emitting Diodes.

Tailoring the Interfacial Structure of Colloidal "giant" Quantum Dots for Optoelectronic Applications.

Ligand-Solvent Coordination Enables Comprehensive Trap Passivation for Efficient Near-Infrared Quantum Dot Light-Emitting Diodes

Improved Charge Injection Balance in Quantum Dot Light-Emitting Diodes through Interface Texture

Preparation of Quantum Dot Light-emitting Diodes Based on the Quantum Dots-CBP Hybrid

Enhancement of Two-Photon Fluorescence and Low Threshold Amplification of Spontaneous Emission of Zn-processed CuInS2 Quantum Dots

Anomalous Efficiency Elevation of Quantum-Dot Light-Emitting Diodes Induced by Operational Degradation.

High Brightness Electroluminescence of Non‐Carrier‐Injection QLEDs with Precise Layer Processing by Spontaneous Spreading Method

Influence of shells on the charge tunnelling behaviour in quantum-dot light-emitting diodes

Tuning Energy Transfer Efficiency in Quantum Dots Mixture by Controling Donor/acceptor Ratio

Nanoshell-driven carrier engineering of large quantum dots enables ultra-stable and efficient LEDs

Boosting Efficiency and Stability of Green InP Quantum Dot Light-Emitting Diodes by Interface Dipole Modulation

Efficient Green Light-Emitting Diodes Based on Alloy Quantum Dots with an Organic/Inorganic Hybrid Surface Passivation

Electrochemically-Stable Ligands Bridge The Photoluminescence-Electroluminescence Gap Of Quantum Dots

Efficient Quantum Dot Light-Emitting Diode Enabled by a Thick Inorganic CdS Interfacial Modification Layer

Silicon-Quantum-Dot Light-Emitting Diodes with Interlayer-Enhanced Hole Transport

Improved Device Performances Based on Si Quantum Dot/si Nanowire Hetero-Structures by Inserting an Al2O3 Thin Layer