Abstract:Quantum-dot light-emitting diodes (QLEDs) may combine superior properties of colloidal quantum dots (QDs) and advantages of solution-based fabrication techniques to realize high-performance, large-area, and low-cost electroluminescence devices. In the state-of-the-art red QLED, an ultrathin insulating layer inserted between the QD layer and the oxide electron-transporting layer (ETL) is crucial for both optimizing charge balance and preserving the QDs' emissive properties. However, this key insulating layer demands very accurate and precise control over thicknesses at sub-10 nm level, causing substantial difficulties for industrial production. Here, it is reported that interfacial exciton quenching and charge balance can be independently controlled and optimized, leading to devices with efficiency and lifetime comparable to those of state-of-the-art devices. Suppressing exciton quenching at the ETL-QD interface, which is identified as being obligatory for high-performance devices, is achieved by adopting Zn0.9Mg0.1O nanocrystals, instead of ZnO nanocrystals, as ETLs. Optimizing charge balance is readily addressed by other device engineering approaches, such as controlling the oxide ETL/cathode interface and adjusting the thickness of the oxide ETL. These findings are extended to fabrication of high-efficiency green QLEDs without ultrathin insulating layers. The work may rationalize the design and fabrication of high-performance QLEDs without ultrathin insulating layers, representing a step forward to large-scale production and commercialization.

Electrochemically Stable Ligands of ZnO Electron-Transporting Layers for Quantum-Dot Light-Emitting Diodes.

Enhanced performance of quantum dot light-emitting diodes enabled by zirconium doped SnO2 as electron transport layers

Optimizing ZnO–Quantum Dot Interface with Thiol as Ligand Modification for High‐Performance Quantum Dot Light‐Emitting Diodes

Improved Performance of Quantum Dot Light-Emitting Diodes by Hybrid Electron Transport Layer Comprised of ZnO Nanoparticles Doped Organic Small Molecule

Defect Passivation and Electron Band Energy Regulation of a ZnO Electron Transport Layer Through Synergetic Bifunctional Surface Engineering for Efficient Quantum Dot Light-Emitting Diodes

Surface engineering of ZnO nanoparticles with diethylenetriamine for efficient red quantum-dot light-emitting diodes

20‐4: Efficient and Stable Red Quantum Dot Light‐Emitting Diode with Modified ZnMgO Nanoparticles

Qd-Led Devices Using Znsno As an Electron-Transporting Layer

Mg-Diffusion of ZnO-Based Electron-Transport Layers for Highly Conductive Quantum-Dot Light-Emitting Diodes

Highly Efficient Inverted Quantum Dot Light-Emitting Diodes Employing Sol-Gel Derived Li-doped ZnO As Electron Transport Layer

High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

Optimizing ZnO–Quantum Dot Interface with Thiol as Ligand Modification for High‐Performance Quantum Dot Light‐Emitting Diodes (Small 13/2024)

Highly Stable SnO2-Based Quantum-Dot Light-Emitting Diodes with the Conventional Device Structure

Sn-doped ZnO for efficient and stable quantum dot light-emitting diodes via a microchannel synthesis strategy

ZnMgO:ZnO composite films for fast electron transport and high charge balance in quantum dot light emitting diodes

Stable and Efficient All-Inorganic Quantum Dot Light-Emitting Diodes Based on a Double-Layer Electron Transport Layer

ZnO/silica Quasi Core/shell Nanoparticles As Electron Transport Materials for High-Performance Quantum-Dot Light-Emitting Diodes

Enhancing Extraction Efficiency of Quantum Dot Light-Emitting Diodes Introducing a Highly Wrinkled ZnO Electron Transport Layer.

High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer

Enhanced Luminance of CdSe/ZnS Quantum Dots Light-Emitting Diodes Using ZnO-Oleic Acid/ZnO Quantum Dots Double Electron Transport Layer

Electrochemically-Stable Ligands Bridge The Photoluminescence-Electroluminescence Gap Of Quantum Dots