Abstract:Quantum-dot light-emitting diodes (QLEDs) may combine superior properties of colloidal quantum dots (QDs) and advantages of solution-based fabrication techniques to realize high-performance, large-area, and low-cost electroluminescence devices. In the state-of-the-art red QLED, an ultrathin insulating layer inserted between the QD layer and the oxide electron-transporting layer (ETL) is crucial for both optimizing charge balance and preserving the QDs' emissive properties. However, this key insulating layer demands very accurate and precise control over thicknesses at sub-10 nm level, causing substantial difficulties for industrial production. Here, it is reported that interfacial exciton quenching and charge balance can be independently controlled and optimized, leading to devices with efficiency and lifetime comparable to those of state-of-the-art devices. Suppressing exciton quenching at the ETL-QD interface, which is identified as being obligatory for high-performance devices, is achieved by adopting Zn0.9Mg0.1O nanocrystals, instead of ZnO nanocrystals, as ETLs. Optimizing charge balance is readily addressed by other device engineering approaches, such as controlling the oxide ETL/cathode interface and adjusting the thickness of the oxide ETL. These findings are extended to fabrication of high-efficiency green QLEDs without ultrathin insulating layers. The work may rationalize the design and fabrication of high-performance QLEDs without ultrathin insulating layers, representing a step forward to large-scale production and commercialization.

Optimizing ZnO–Quantum Dot Interface with Thiol as Ligand Modification for High‐Performance Quantum Dot Light‐Emitting Diodes (Small 13/2024)

Optimizing ZnO–Quantum Dot Interface with Thiol as Ligand Modification for High‐Performance Quantum Dot Light‐Emitting Diodes

Electrochemically Stable Ligands of ZnO Electron-Transporting Layers for Quantum-Dot Light-Emitting Diodes.

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

1,2-Ethanedithiol Treatment for AgIn5S8/ZnS Quantum Dot Light-Emitting Diodes with High Brightness

Light-Emitting Diodes Based on Colloidal Silicon Quantum Dots with Octyl and Phenylpropyl Ligands.

Enhanced performance of quantum dot light-emitting diodes enabled by zirconium doped SnO_2 as electron transport layers

Surface organic ligand-passivated quantum dots: toward high-performance light-emitting diodes with long lifetimes

High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer

Ligand-assisted structure tailoring of highly luminescent Cu-In-Zn-S/ZnS//ZnS quantum dots for bright and stable light-emitting diodes

Sn-doped ZnO for efficient and stable quantum dot light-emitting diodes via a microchannel synthesis strategy

Tailoring Nanostructures of Quantum Dots toward Efficient and Stable All-Solution Processed Quantum Dot Light-Emitting Diodes

Silicon-Quantum-Dot Light-Emitting Diodes with Interlayer-Enhanced Hole Transport

Shelf-Stable Green and Blue Quantum Dot Light-Emitting Diodes with High Efficiencies

Surface engineering of ZnO nanoparticles with diethylenetriamine for efficient red quantum-dot light-emitting diodes

High-efficiency, deep blue ZnCdS/CdxZn1-xS/ZnS quantum-dot-light-emitting devices with an EQE exceeding 18

Efficient Quantum Dot Light-Emitting Diode Enabled by a Thick Inorganic CdS Interfacial Modification Layer

Electronic Structural Insight into High‐Performance Quantum Dot Light‐Emitting Diodes

Enhanced performance of quantum dot light-emitting diodes enabled by zirconium doped SnO2 as electron transport layers

Efficient Quantum Dot Light-Emitting Diodes with a Zn0.85Mg0.15O Interfacial Modification Layer.