Abstract:Cadmium selenide (CdSe)-based colloidal quantum dots (QDs) exhibit unique properties such as tunable colors, narrow emission, high photoluminescence efficiency, and high stability, making them one of the most promising candidates for next-generation displays. CdSe-based QD light-emitting diodes (QLEDs) have attracted more and more attention mainly due to their advantages including high electroluminescence brightness, low turn-on voltage, and ultrathin device structures. However, there are still many challenges, mainly including the lattice defects aroused by lattice strain during the QD growth process and the surface defects caused by ligand desorption. CdSe-based QLEDs with high photoelectronic performance were finally achieved in our work just by optimizing the synthesis processes and further reducing defects in QD shells. There was a great decrease in the defect density of the QD shell indirectly according to their testing results in the fluorescence lifetime and single-carrier devices. After the reaction system was diluted with a solvent in the hot-injection method, there was some blue shift in the QD emission observed from 595 to 562 nm. Then, with the ZnSe shell further coated onto the QD, the size of the effective emission center was reduced to some extent, and further, a blue shift in the emission was obtained with the wavelength down to 533 nm. Finally, on the outside of the as-synthesized QDs, the ZnS shell was used to passivate and further protect the ZnSe layer, which greatly increased the average fluorescence lifetime of the CdSe-based QDs from 22.94 to 36.41 ns. Additionally, a layer of lithium fluoride (LiF) with optimized thickness was further deposited onto the QD emitting layer to prevent ligand desorption from ethanol solvent cleaning. Therefore, the CdSe-based QD fluorescence efficiency was greatly improved and the maximum external quantum efficiency (EQE) of 8.06% for our CdSe-based QLEDs was achieved with a LiF layer of 3 nm.

Ligand-assisted structure tailoring of highly luminescent Cu-In-Zn-S/ZnS//ZnS quantum dots for bright and stable light-emitting diodes

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

High-efficiency, deep blue ZnCdS/CdxZn1-xS/ZnS quantum-dot-light-emitting devices with an EQE exceeding 18

Qd-Led Devices Using Znsno As an Electron-Transporting Layer

White light-emitting quantum dot diodes and tuning of luminescence processes

Efficient silicon quantum dots light emitting diodes with an inverted device structure

Highly efficient near-infrared light-emitting diodes based on Zn:CuInSe2/ZnS//ZnS quantum dots with double shell engineering

Quantum-Dot Blue Light Emitting Diodes Utilizing Organic/Inorganic Hybrid Structures

Synthesis of highly fluorescent InP/ZnS small-core/thick-shell tetrahedral-shaped quantum dots for blue light-emitting diodes

Efficient Green Light-Emitting Diodes Based on Alloy Quantum Dots with an Organic/Inorganic Hybrid Surface Passivation

Electronic Structural Insight into High‐Performance Quantum Dot Light‐Emitting Diodes

Tailoring Nanostructures of Quantum Dots toward Efficient and Stable All-Solution Processed Quantum Dot Light-Emitting Diodes

Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes

1,2-Ethanedithiol Treatment for AgIn5S8/ZnS Quantum Dot Light-Emitting Diodes with High Brightness

Electrochemically-Stable Ligands Bridge The Photoluminescence-Electroluminescence Gap Of Quantum Dots

Capping Ligand Engineering of Cadmium‐Free AIZS Quantum Dots Toward Bright Electroluminescent Light‐Emitting Diodes by All‐Solution Process

Emission Tuning of Highly Efficient Quaternary Ag-Cu-Ga-Se/ZnSe Quantum Dots for White Light-Emitting Diodes.

Dual-function ligand surface control to achieve high efficiency and brightness perovskite quantum dots LED devices

ZnF 2 -Assisted Synthesis of Highly Luminescent InP/ZnSe/ZnS Quantum Dots for Efficient and Stable Electroluminescence

Near‐Unity Quantum Yield ZnSeTe Quantum Dots Enabled by Controlling Shell Growth for Efficient Deep‐Blue Light‐Emitting Diodes

Low temperature synthesis of highly bright green emission CuInS2/ZnS quantum dots and its application in light-emitting diodes