Tailoring Nanostructures of Quantum Dots toward Efficient and Stable All-Solution Processed Quantum Dot Light-Emitting Diodes

Lixi Wang,Jiangyong Pan,Chengjun Liu,Zihan Zhao,Fan Fang,Ye Wang,Guangzhao Wang,Wei Lei,Jing Chen,Dewei Zhao
DOI: https://doi.org/10.1021/acsami.1c02515
2021-04-09
Abstract:Quantum dots (QDs) light-emitting diodes (QLEDs) are considered the most promising candidate for application in displays. While the efficiency of QLEDs has been greatly developed in recent years and is comparable to that of organic light-emitting diodes (OLEDs), it still remains challenging to realize both high efficiency and long lifetimes. In this work, we report efficient and stable red QLEDs with the maximum current efficiency of 13.48 cd A<sup>-1</sup>, external quantum efficiency of 18.65%, and low efficiency roll-off at high luminance with a long lifetime exceeding ∼2.9 × 10<sup>5</sup> h, representing a 3-fold increase in stability. Tailoring the composition of QDs suppresses nonradiative Förster resonant energy transfer and Auger recombination and provides favorable valence band alignment to boost the hole injection. Our work suggests that tailoring the nanostructures of QDs offers an effective means to simultaneously achieve high efficiency and high stability, accelerating QLED technology for practical applications in displays and lighting.
materials science, multidisciplinary,nanoscience & nanotechnology
What problem does this paper attempt to address?
This paper attempts to address the challenges faced by quantum dot light-emitting diodes (QLEDs) in achieving high efficiency and long lifespan. Although the efficiency of QLEDs has significantly improved in recent years and is comparable to that of organic light-emitting diodes (OLEDs), achieving both high efficiency and long lifespan simultaneously remains a challenge. The paper achieves highly efficient and stable red QLEDs by adjusting the nanostructure of quantum dots (QDs), particularly by introducing a CdZnS intermediate layer to suppress non-radiative energy transfer (FRET) and Auger recombination, and optimizing valence band alignment to improve hole injection efficiency. Specifically, this improvement enables the QLEDs to achieve a maximum current efficiency of 13.48 cd A^-1, an external quantum efficiency (EQE) of 18.65%, and lower efficiency roll-off at high brightness, with a lifespan exceeding 290,000 hours, which is three times longer than that of the control device. These improvements not only enhance the performance of QLEDs but also provide an effective pathway for achieving low-cost, large-area, fully solution-processed display technology.