Bayesian inference and “truth”: a comment on Hoffman, Singh, and Prakash

J. Feldman

DOI: https://doi.org/10.3758/s13423-014-0795-y

2015-09-18

Psychonomic Bulletin & Review

Abstract:

What problem does this paper attempt to address?

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Xiaokun Fan,Zhen Mu,Zhao Chen,Yunfeng Zhan,Fanyuan Meng,Yang Li,Guichuan Xing,Wai-Yeung Wong

DOI: https://doi.org/10.1016/j.cej.2023.142027

IF: 15.1

2023-01-01

Chemical Engineering Journal

Abstract:Near 100% photoluminescence quantum yield (PL QY) is the first target for designing luminescent quantum dots (QDs). Here, an alloyed QD with a core/shell structure of Cd0.194Zn0.806Se0.406S0.594/ZnS is synthesized and characterized by the feature of large core size (about 10 nm) and thin shell (around three ZnS monolayers). It exhibits an efficient green emission with the PL QY of 99.8% and ultra-fast radiative transition rate (kr) of 4.16 x 107 s-1. It demonstrates that the excited state will be rapidly decayed to its ground state through a radiative channel and less vulnerable to non-radiative processes. Under a high pump intensity (254.65 mu J cm - 2), the Cd0.194Zn0.806Se0.406S0.594/ZnS QD still owns a long biexciton decay lifetime (tau xx) of 1.05 ns and high biexciton QYxx of 25.1%, corresponding to a suppressed non-radiative Auger recombination. The Cd0.194Zn0.806Se0.406S0.594/ZnS QD based light-emitting diode exhibits a peak external quantum efficiency of 20.1% and brightness of over105 cd m-2 at 5.2 V. We believe that the Cd0.194Zn0.806Se0.406S0.594/ZnS QD not only provides a near-unity QY but also ensures its QD based light-emitting diode (QLED) with an excellent performance, which could be an excellent QD material for QLED applications.
Over 32.5% Efficient Top-Emitting Quantum-Dot LEDs with Angular-Independent Emission

Liangliang Shi,Shuming Chen

DOI: https://doi.org/10.1021/acsami.2c06670

2022-07-06

Abstract:Top-emitting quantum-dot light-emitting diodes (TQLEDs) with light emitted from the top semitransparent electrodes can improve the aperture ratio, efficiency, and color saturation of displays. However, because of the microcavity effect induced by the top semitransparent electrodes, the devices usually exhibit angular-dependent emission, which is unfavorable for display applications. In this study, highly transparent and conductive indium zinc oxide (IZO) is used as the top electrode to reduce the microcavity effect, thereby improving the angular color stability. By further applying a nanosphere scattering layer on the IZO top electrode, the trapped light is greatly extracted, and thus, the external quantum efficiencies (EQEs) are remarkably improved by 35, 50, and 133% for the red, green, and blue devices, respectively. The champion red TQLEDs exhibit a record EQE of 32.5% with angular-independent color emission. The demonstrated TQLEDs with high efficiency, high color stability, and a high aperture ratio could be the ideal candidates for QLED displays.
Ultralow Roll‐Off Quantum Dot Light‐Emitting Diodes Using Engineered Carrier Injection Layer

Zebing Liao,Kumar Mallem,Maksym F. Prodanov,Chengbin Kang,Yiyang Gao,Jianxin Song,Valerii V. Vashchenko,Abhishek K. Srivastava,Ebbing Liao,Changing Kang

DOI: https://doi.org/10.1002/adma.202303950

IF: 29.4

2023-09-26

Advanced Materials

Abstract:Quantum dot light‐emitting diodes (QLED) have attracted extensive attention due to their high color purity, solution‐processability, and high brightness. Due to extensive efforts, the external quantum efficiency (EQE) of QLED has approached the theoretical limit. However, because of the efficiency roll‐off, the high EQE can only be achieved at relatively low luminance, hindering their application in high‐brightness devices such as near‐to‐eye displays and lighting applications. Here, we report an ultralow roll‐off QLEDs that is achieved by simultaneously blocking electron leakage and enhancing the hole injection, thereby shifting the recombination zone back to the emitting quantum dots (QDs) layer. These devices maintain EQE over 20.6% up to 1000 mA·cm−2 current density, dropping only by ∼5% from the peak EQE of 21.6%, which is the highest value ever reported for the bottom‐emitting red QLEDs. Furthermore, the maximum luminance of the optimal device reached 320,000 cd·m−2, 2.7 times higher than the control device (Lmax: 128,000 cd·m−2). We also demonstrated a passive matrix QLED display panel with high brightness based on the optimized device structure. The proposed approach advances the potential of QLEDs to operate efficiently in high‐brightness scenarios. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Device Physics and Device Chemistry of Quantum-Dot Light-Emitting Diodes

Yizheng Jin

DOI: https://doi.org/10.1117/12.2566976

2021-01-01

Abstract:Quantum dots (QDs) are a unique class of emitters with size-tunable emission wavelengths, saturated emission colors, near-unity luminance efficiency, inherent photo- and thermal- stability and excellent solution processability. In the past few years, efficiency and lifetime of quantum-dot light-emitting diodes (QLEDs) achieved tremendous progress. These encouraging facts foreshadow the commercialization of QLEDs, which promises an unprecedented generation of cost-effective, large-area, energy-saving, wide-color-gamut, ultra-thin and flexible displays. Here we review our activities associated with QLEDs, including exciton-generation mechanisms, material chemistry of charge-transporting layers and device engineering.
Tailoring Nanostructures of Quantum Dots toward Efficient and Stable All-Solution Processed Quantum Dot Light-Emitting Diodes

Lixi Wang,Jiangyong Pan,Chengjun Liu,Zihan Zhao,Fan Fang,Ye Wang,Guangzhao Wang,Wei Lei,Jing Chen,Dewei Zhao

DOI: https://doi.org/10.1021/acsami.1c02515

2021-04-09

Abstract:Quantum dots (QDs) light-emitting diodes (QLEDs) are considered the most promising candidate for application in displays. While the efficiency of QLEDs has been greatly developed in recent years and is comparable to that of organic light-emitting diodes (OLEDs), it still remains challenging to realize both high efficiency and long lifetimes. In this work, we report efficient and stable red QLEDs with the maximum current efficiency of 13.48 cd A<sup>-1</sup>, external quantum efficiency of 18.65%, and low efficiency roll-off at high luminance with a long lifetime exceeding ∼2.9 × 10<sup>5</sup> h, representing a 3-fold increase in stability. Tailoring the composition of QDs suppresses nonradiative Förster resonant energy transfer and Auger recombination and provides favorable valence band alignment to boost the hole injection. Our work suggests that tailoring the nanostructures of QDs offers an effective means to simultaneously achieve high efficiency and high stability, accelerating QLED technology for practical applications in displays and lighting.

materials science, multidisciplinary,nanoscience & nanotechnology
High-performance green and blue quantum-dot light-emitting diodes with eliminated charge leakage

Yunzhou Deng,Feng Peng,Yao Lu,Xitong Zhu,Wangxiao Jin,Jing Qiu,Jiawei Dong,Yanlei Hao,Dawei Di,Yuan Gao,Tulai Sun,Linjun Wang,Lei Ying,Fei Huang,Yizheng Jin

DOI: https://doi.org/10.48550/arXiv.2111.11752

2021-11-23

Optics

Abstract:Quantum-dot light-emitting diodes (QD-LEDs) promise a new generation of efficient, low-cost, large-area, and flexible electroluminescent devices. However, the inferior performance of green and blue QD-LEDs is hindering the commercialization of QD-LEDs in display and solid-state lighting. Here, we demonstrate best-performing green and blue QD-LEDs with ~100% conversion of the injected charge carriers into emissive excitons. Key to this success is eliminating electron leakage at the organic/inorganic interface by using hole-transport polymers with low electron affinity and reduced energetic disorder. Our devices exhibit record-high peak external quantum efficiencies (28.7% for green, 21.9% for blue), exceptionally high efficiencies in wide ranges of luminance, and unprecedented stability (T95 lifetime: 580,000 h for green, 4,400 h for blue). The overall performance surpasses previously reported solution-processed green and blue LEDs.
Ultra-bright and energy-efficient quantum-dot LEDs by idealizing charge injection

Yizhen Zheng,Xing Lin,Jiongzhao Li,Jianan Chen,Zixuan Song,Yuan Gao,Huifeng Wang,Zikang Ye,Haiyan Qin,Xiaogang Peng

2024-06-14

Abstract:Lighting and display, relying on electric and optical down-conversion emission with sluggish power efficiency, account for >15% global electricity consumption1,2. In 2014, quantum-dot (QD) LEDs (QLEDs) with near-optimal external quantum efficiency emerged3 and promised a pathway to avoid the vast down-conversion energy loss4,5. Despite a decade of progress4-22, fabrication of energy-efficient QLEDs with application-relevant brightness remains elusive. Here, the main roadblock is identified as the oxidative species adsorbed in the nanocrystalline electron-injection layer of QLEDs, which is then addressed by a simple reductive treatment to simultaneously boosts electron conductivity and hole blockage of the electron-injection layer. The resulting sub-bandgap-driven QLEDs with optimal efficiency achieve ultra-high brightness across the entire visible spectrum at least 2.6-fold higher than existing benchmarks. The brightness fully satisfies the demands of various forms of lighting and display, which surges to a remarkable level sufficient for QD laser diodes with a moderate bias (~9 V). Optimized electron injection further enables new types of QD-blend LEDs for diffuse white-light sources surpassing the 2035 R&D targets set by the U.S. Department of Energy. Our findings open a door for understanding and optimizing carrier transport in nanocrystalline semiconductors shared by various types of solution-processed optoelectronic devices.

Applied Physics,Materials Science
Full-Color Quantum Dot Light-Emitting Diodes Based on Microcavities

Guanding Mei,Weigao Wang,Dan Wu,Philip Anthony Surman,Kai Wang,Wallace C. H. Choy,Xiaochuan Yang,Wenwei Xu,Xiao Wei Sun

DOI: https://doi.org/10.1109/jphot.2022.3159278

IF: 2.4

2022-04-01

IEEE Photonics Journal

Abstract:Full-color display is a primary challenge for the commercialization of quantum dots (QDs). In this study, we utilize the spectral narrowing phenomenon of microcavities to fabricate the red, green and blue quantum dot light-emitting diodes (QLEDs) with a single QD layer. This work theoretically analyses the role of microcavities in adjusting the emitting color of QLEDs. By enhanced microcavity and properly chosen spacer thickness, the spectral selectivity shifts, realizing the full-color-tunability of QLEDs. The tunable experimental spectra of microcavity QLEDs are observed, in excellent agreement with our theoretical design. Benefiting from the spectral narrowing of microcavity and the narrow spectra of QDs, a high color purity with full width at half maximum (FWHM) of 18 to 25 nm is realized, leading to a color gamut ratio of 104.8 compared to National Television System Committee (NTSC) standard. The light extraction is also enhanced by constructive interference and the Purcell effect in the microcavity. Moreover, in the fabrication of red, green, and blue pixels, patterning the transparent cathode has better feasibility and lower damage relative to patterning the light-emitting layer.

engineering, electrical & electronic,optics,physics, applied
Ameliorating Uniformity and Color Conversion Efficiency in Quantum Dot-Based Micro-LED Displays through Blue–UV Hybrid Structures

Tzu-Yi Lee,Wen-Chien Miao,Yu-Ying Hung,Yi-Hong Bai,Pei-Tien Chen,Wei-Ta Huang,Kuan-An Chen,Chien-Chung Lin,Fang-Chung Chen,Yu-Heng Hong,Hao-Chung Kuo

DOI: https://doi.org/10.3390/nano13142099

IF: 5.3

2023-07-19

Nanomaterials

Abstract:Quantum dot (QD)-based RGB micro light-emitting diode (μ-LED) technology shows immense potential for achieving full-color displays. In this study, we propose a novel structural design that combines blue and quantum well (QW)-intermixing ultraviolet (UV)-hybrid μ-LEDs to achieve high color-conversion efficiency (CCE). For the first time, the impact of various combinations of QD and TiO2 concentrations, as well as thickness variations on photoluminescence efficiency (PLQY), has been systematically examined through simulation. High-efficiency color-conversion layer (CCL) have been successfully fabricated as a result of these simulations, leading to significant savings in time and material costs. By incorporating scattering particles of TiO2 in the CCL, we successfully scatter light and disperse QDs, effectively reducing self-aggregation and greatly improving illumination uniformity. Additionally, this design significantly enhances light absorption within the QD films. To enhance device reliability, we introduce a passivation protection layer using low-temperature atomic layer deposition (ALD) technology on the CCL surface. Moreover, we achieve impressive CCE values of 96.25% and 92.91% for the red and green CCLs, respectively, by integrating a modified distributed Bragg reflector (DBR) to suppress light leakage. Our hybrid structure design, in combination with an optical simulation system, not only facilitates rapid acquisition of optimal parameters for highly uniform and efficient color conversion in μ-LED displays but also expands the color gamut to achieve 128.2% in the National Television Standards Committee (NTSC) space and 95.8% in the Rec. 2020 standard. In essence, this research outlines a promising avenue towards the development of bespoke, high-performance μ-LED displays.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Beyond OLED: Efficient Quantum Dot Light‐Emitting Diodes for Display and Lighting Application

Yizhe Sun,Yibin Jiang,Xiao Wei Sun,Shengdong Zhang,Shuming Chen

DOI: https://doi.org/10.1002/tcr.201800191

2019-01-01

Abstract:The unique features of solution-processed quantum dots (QDs) including emission tunability in the visible range, high-quality saturated color and outstanding intrinsic stability in environment are highly desired in various application fields. Especially, for the preparation of wide color gamut displays, QDs with high photoluminescence quantum yield are deemed as the optimal fluorescent emitter that has been utilized in the backlight for liquid crystal display. Nevertheless, the commercialization of electrically driven self-emissive quantum dot light-emitting diode (QLED) display is the ultimate target due to its merits of high contrast, slim configuration and compatibility with flexible substrate. Through the great efforts devoted to material engineering and device configuration, astonishing progresses have been made in device performance, giving the QLED technology a great chance to compete with other counterparts for next-generation displays. In this review, we retrospect the development roadmap of QLED technology and introduce the essential principles in the QLED devices. Moreover, we discuss the key factors that affect the QLED efficiency and lifetime. Finally, the advances in device architectures and pixel patterning are also summarized.
Ultrahigh-resolution quantum-dot light-emitting diodes

Tingtao Meng,Yueting Zheng,Denglin Zhao,Hailong Hu,Yangbin Zhu,Zhongwei Xu,Songman Ju,Jipeng Jing,Xiang Chen,Hongjin Gao,Kaiyu Yang,Tailiang Guo,Fushan Li,Junpeng Fan,Lei Qian

DOI: https://doi.org/10.1038/s41566-022-00960-w

IF: 35

2022-02-28

Nature Photonics

Abstract:With the ever-growing demand for a greater number of pixels, next-generation displays have challenging requirements for resolution as well as colour gamut. Here, to meet this need, quantum-dot light-emitting diodes (QLEDs) with an ultrahigh pixel resolution of 9,072–25,400 pixels per inch are realized via transfer printing combined with the Langmuir–Blodgett film technology. To reduce the leakage current of the devices, a honeycomb-patterned layer of wide-bandgap quantum dots is embedded between the light-emitting quantum-dot pixels as a non-emitting charge barrier layer. Red and green QLEDs are demonstrated. Notably, the red devices achieve a brightness of up to 262,400 cd m−2 at an applied voltage of 8 V and a peak external quantum efficiency of 14.72%. This work provides a promising way for achieving ultrahigh-resolution QLED devices with high performance.

optics,physics, applied
High Efficiency Ultra‐Narrow Emission Quantum Dot Light‐Emitting Diodes Enabled by Microcavity

Fengjuan Zhang,Gege Li,Penghao Zhou,Zhuoyue Chen,Jungui Zhou,Ningxiao Fang,Lingheng Kong,Qingli Lin,Stephan V. Roth,Huaibin Shen

DOI: https://doi.org/10.1002/smll.202405704

IF: 13.3

2024-10-22

Small

Abstract:Ultra‐high color purity and efficient forward‐emitting red quantum dot light‐emitting diodes (QLEDs) with an emission linewidth of 11 nm and an a external quantum efficiency (EQE) of 35.6% are achieved by integrating distributed Bragg reflector into normal electroluminescent (EL) devices to form a microcavity. This study fills the gap of EL linewidth near 10 nm for red QLEDs with EQE exceeding 20% and significantly promotes the commercialization for ultra‐high‐definition display applications. A wide‐color‐gamut display enableby a narrow emission linewidth facilitates a visually immersive experience akin to the real world. Quantum dot light‐emitting diodes (QLEDs) with excellent color purity and high efficiency hold great promise as future candidates for high‐definition displays. However, most devices typically exhibit emission linewidths exceeding 20 nm, and lack a universal strategy for further enhancing the color purity. In this study, a planar microcavity structure for realizing ultra‐narrow emissions is developed by incorporating a distributed Bragg reflector into normal electroluminescent devices. By leveraging the strong optical resonance effect derived from this microcavity structure, red QLEDs are successfully fabricated with an extraordinary full width at half maximum of 11 nm in the normal direction, beyond the BT.2020 color coordinates. The fabricated red‐microcavity QLEDs exhibit a considerable enhancement in the external quantum efficiency, which increases from 28.2% to 35.6%, together with an extended operating lifetime. The strategy adopted herein will serve as an effective reference for achieving ultra‐narrow emission and high‐efficiency QLEDs.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

Zhenxing Zhang,Yuxun Ye,Chaodan Pu,Yunzhou Deng,Xingliang Dai,Xiaopeng Chen,Dong Chen,Xuerong Zheng,Yuan Gao,Wei Fang,Xiaogang Peng,Yizheng Jin

DOI: https://doi.org/10.1002/adma.201801387

IF: 29.4

2018-01-01

Advanced Materials

Abstract:Quantum-dot light-emitting diodes (QLEDs) may combine superior properties of colloidal quantum dots (QDs) and advantages of solution-based fabrication techniques to realize high-performance, large-area, and low-cost electroluminescence devices. In the state-of-the-art red QLED, an ultrathin insulating layer inserted between the QD layer and the oxide electron-transporting layer (ETL) is crucial for both optimizing charge balance and preserving the QDs' emissive properties. However, this key insulating layer demands very accurate and precise control over thicknesses at sub-10 nm level, causing substantial difficulties for industrial production. Here, it is reported that interfacial exciton quenching and charge balance can be independently controlled and optimized, leading to devices with efficiency and lifetime comparable to those of state-of-the-art devices. Suppressing exciton quenching at the ETL-QD interface, which is identified as being obligatory for high-performance devices, is achieved by adopting Zn0.9Mg0.1O nanocrystals, instead of ZnO nanocrystals, as ETLs. Optimizing charge balance is readily addressed by other device engineering approaches, such as controlling the oxide ETL/cathode interface and adjusting the thickness of the oxide ETL. These findings are extended to fabrication of high-efficiency green QLEDs without ultrathin insulating layers. The work may rationalize the design and fabrication of high-performance QLEDs without ultrathin insulating layers, representing a step forward to large-scale production and commercialization.
Bright and Stable Yellow Quantum Dot Light‐Emitting Diodes Through Core–Shell Nanostructure Engineering

Saifei Li,Xiongping Xu,Qingli Lin,Jiahui Sun,Han Zhang,Huaibin Shen,Lin Song Li,Lei Wang

DOI: https://doi.org/10.1002/smll.202306859

IF: 13.3

2023-12-28

Small

Abstract:Abstract Solution‐processed and efficient yellow quantum dot light‐emitting diodes (QLEDs) are considered key optoelectronic devices for lighting, display, and signal indication. However, limited synthesis routes for yellow quantum dots (QDs), combined with inferior stress‐relaxation of the core–shell interface, pose challenges to their commercialization. Herein, a nanostructure tailoring strategy for high‐quality yellow CdZnSe/ZnSe/ZnS core/shell QDs using a “stepwise high‐temperature nucleation‐shell growth” method is introduced. The synthesized CdZnSe‐based QDs effectively smoothed the release stress of the core–shell interface and revealed a near‐unit photoluminescence quantum yield, with nonblinking behavior and matched energy level, which accelerated radiative recombination and charge injection balance for device operation. Consequently, the yellow CdZnSe‐based QLEDs exhibited a peak external quantum efficiency of 23.7%, a maximum luminance of 686 050 cd m −2 , and a current efficiency of 103.2 cd A −1 , along with an operating half‐lifetime of 428 523 h at 100 cd m −2 . To the best of the knowledge, the luminance and operational stability of the device are found to be the highest values reported for yellow LEDs. Moreover, devices with electroluminescence (EL) peaks at 570–605 nm exhibited excellent EQEs, surpassing 20%. The work is expected to significantly push the development of RGBY‐based display panels and white LEDs.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Shelf-Stable Green and Blue Quantum Dot Light-Emitting Diodes with High Efficiencies

Xiao Luo,Siyu He,Desui Chen,Guolong Sun,Jiejun Zeng,Xitong Zhu,Wangxiao Jin,Xiuyuan Lu,Yanlei Hao,Yizheng Jin

DOI: https://doi.org/10.1021/acs.jpclett.4c01594

IF: 6.888

2024-06-21

The Journal of Physical Chemistry Letters

Abstract:Quantum dot light-emitting diodes (QLEDs) are promising electroluminescent devices for next-generation display and solid-state lighting technologies. Achieving shelf-stable and high-performance QLEDs is crucial for their practical applications. However, the successful demonstration of shelf-stable QLEDs with high efficiencies is limited to red devices. Here, we developed a solution-based amine ligand exchange strategy to passivate the surfaces of optical ZnO (O-ZnO) nanocrystals, leading to...

chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary
Blue light-emitting diodes based on colloidal quantum dots with reduced surface-bulk coupling

Xingtong Chen,Xiongfeng Lin,Likuan Zhou,Xiaojuan Sun,Rui Li,Mengyu Chen,Yixing Yang,Wenjun Hou,Longjia Wu,Weiran Cao,Xin Zhang,Xiaolin Yan,Song Chen

DOI: https://doi.org/10.1038/s41467-023-35954-x

IF: 16.6

2023-01-17

Nature Communications

Abstract:Abstract To industrialize printed full-color displays based on quantum-dot light-emitting diodes, one must explore the degradation mechanism and improve the operational stability of blue electroluminescence. Here, we report that although state-of-the-art blue quantum dots, with monotonically-graded core/shell/shell structures, feature near-unity photoluminescence quantum efficiency and efficient charge injection, the significant surface-bulk coupling at the quantum-dot level, revealed by the abnormal dipolar excited state, magnifies the impact of surface localized charges and limits operational lifetimes. Inspired by this, we propose blue quantum dots with a large core and an intermediate shell featuring nonmonotonically-graded energy levels. This strategy significantly reduces surface-bulk coupling and tunes emission wavelength without compromising charge injection. Using these quantum dots, we fabricate bottom-emitting devices with emission colors varying from near-Rec.2020-standard blue to sky blue. At an initial luminance of 1000 cd m −2 , these devices exhibit T 95 operational lifetimes ranging from 75 to 227 h, significantly surpassing the existing records.

multidisciplinary sciences
23% power conversion efficiency light-emitting diodes using monolayer quantum dots

Fengjia Fan,Yan Gao,Xiaonan Liu,Bo Li,Huaibin Shen,Yang Song,Jiaojiao Song,Yihua Chong,Ruyun Yao,Shujie Wang,Lin Song Li,Zuliang Du

DOI: https://doi.org/10.21203/rs.3.rs-624492/v1

2021-06-23

Abstract:Abstract Ever since the first proposal of using colloidal quantum dots (QDs) as the active emitting layer of light-emitting diode (LED), a monolayer of QD is considered as a better option than the multilayer ones. Owing to the slow charge transport rate among different QD layers, quantum dot light-emitting diodes (QLEDs) adopting multilayer QDs need to be driven at higher than the bandgap bias voltage to achieve practically useful brightness, resulting in increased power consumptions and heat generations, and reduced device lifetimes. Unfortunately, QLEDs using monolayer QDs always suffer from unwanted recombination in hole transport layers (HTLs) and low external quantum efficiencies (EQEs) as a result of electron overflow from QDs into HTLs. Herein, we tackle this dilemma by packing QDs with large size into monolayers, which enables us to mitigate the unwanted electron overflow and retain high EQE. More importantly, it further allows us to boost the irradiative recombination current at bandgap voltage. By virtue of simultaneously obtained high EQE and irradiative recombination rate, we can achieve brightness of 1,100 cd m-2 and 3,000 cd m-2 at 100% and 105% bandgap voltages with record high power conversion efficiencies (PCEs) of 23% and 22%, respectively. Since heat generation has been depressed and devices can be operated at reduced bias voltage, they show unprecedented T95 operation lifetimes (the time for the luminance to decrease to 95% of the initial value) of more than 4,000 h with an initial brightness of 3,000 cd m-2, and equivalent T95 lifetimes of more than 20,000 h at 1,000 cd m-2.
Boosting the efficiency of inverted quantum dot light-emitting diodes by balancing charge densities and suppressing exciton quenching through band alignment

Jiangyong Pan,Changting Wei,Lixi Wang,Jinyong Zhuang,Qianqian Huang,Wenming Su,Zheng Cui,Arokia Nathan,Wei Lei,Jing Chen

DOI: https://doi.org/10.1039/c7nr06248f

IF: 6.7

2018-01-03

Nanoscale

Abstract:We report an inverted and multilayer quantum dot light emitting diode (QLED) which boosts high efficiency by tuning the energy band alignment between charge transport and light emitting layers. The electron transport layer (ETL) was ZnO nanoparticles (NPs) with an optimized doping concentration of cesium azide (CsN3) to effectively reduce electron flow and balance charge injection. This is by virtue of a 0.27 eV upshift of the ETL's conduction band edge, which inhibits the quenching of excitons and preserves the superior emissive properties of the quantum dots due to the insulating characteristics of CsN3. The demonstrated QLED exhibits a peak current efficiency, power efficiency and external quantum efficiency of up to 13.5 cd A-1, 10.6 lm W-1 and 13.4% for the red QLED, and correspondingly 43.1 cd A-1, 33.6 lm W-1 and 9.1% for green, and 4.1 cd A-1, 2.0 lm W-1 and 6.6% for the blue counterparts. Compared with QLEDs without optimization, the performance of these modified devices shows drastic improvement by 95.6%, 39.4% and 36.7%, respectively. This novel device architecture with heterogeneous energy levels reported here offers a new design strategy for next-generation high efficiency QLED displays and solid-state lighting technologies.
83‐4: High‐Performance Inverted Green and Red InP Quantum‐dot Light Emitting Diodes with Robust ZnS Electron Transport Interlayer

Truong Thi Thuy,Nagarjuna Naik Mude,Jang Hyuk Kwon

DOI: https://doi.org/10.1002/sdtp.16784

2023-06-01

SID Symposium Digest of Technical Papers

Abstract:QLED has received extensive attention for decades. However, the performance of QLEDs is still far behind compared with OLED. We focused on the development of new electron transport layer (ETL), which is mainly degradation issue in QLED device. For the first time, we introduced a new, highly stable, and low‐mobility ZnS ETL and used as an interlayer between ZnO and QDs layer. Devices optimized using ZnO/ZnS cascaded ETLs have a peak EQE of 10.8%, a peak CE of 37.5 cd/A, and the device lifetime (LT70) is 265 hours at 1000 nits which is almost 2.2 times greater than those of devices without ZnS. The predicted LT50 at 100 nits is 60,255 hours which is the highest lifetime reported up to date. Further improve the device performance, we introduced a mixing of hole transporting material (HTM) in QDs layer. Devices have improved almost 3.8 times in their lifetime.
A full high‐definition quantum dot light‐emitting diode‐on‐silicon microdisplay

Siqi Jia,Depeng Li,Yixing Chen,Guanding Mei,Jingrui Ma,Xiangwei Qu,Haodong Tang,Pai Liu,Bing Xu,Kai Wang,Zhikuan Zhang,Jun Xia,Xiao Wei Sun

DOI: https://doi.org/10.1002/jsid.1253

2023-08-30

Journal of the Society for Information Display

Abstract:To improve the performance of top‐emitting QLEDs, the optical architecture of device was optimized by simulation and experiment. The normal structured QLED performed better to match the output voltage of CMOS compared to the inverted device. A 0.39‐in. QLED microdisplay with FHD (1920 × 1080) resolution was fabricated by integrating a red TEQLED on a CMOS backplane. We report a 0.39‐in. quantum dot light‐emitting diode (QLED) microdisplay with full high‐definition (FHD, 1920 × 1080) resolution by integrating a red top‐emitting QLED on a complementary metal–oxide–semiconductor (CMOS) backplane. By optimizing the microcavity structure and constructing a suitable energy‐level structure for the QLED devices, the performance of the large‐area (4.9 × 8.7 mm2) top‐emitting device with normal structure reached 13,936 cd/m2 of brightness at 5‐V bias with 13.3% external quantum efficiency (EQE). Notably, the optimal device showed a low turn‐on voltage of 1.7 V, which matched well the voltage output of the CMOS backplane. Our work demonstrates the great promise of QLED microdisplays for applications in head‐mounted augmented reality/virtual reality (AR/VR).

engineering, electrical & electronic,materials science, multidisciplinary,optics,physics, applied

Bayesian inference and “truth”: a comment on Hoffman, Singh, and Prakash

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Over 32.5% Efficient Top-Emitting Quantum-Dot LEDs with Angular-Independent Emission

Ultralow Roll‐Off Quantum Dot Light‐Emitting Diodes Using Engineered Carrier Injection Layer

Device Physics and Device Chemistry of Quantum-Dot Light-Emitting Diodes

Tailoring Nanostructures of Quantum Dots toward Efficient and Stable All-Solution Processed Quantum Dot Light-Emitting Diodes

High-performance green and blue quantum-dot light-emitting diodes with eliminated charge leakage

Ultra-bright and energy-efficient quantum-dot LEDs by idealizing charge injection

Full-Color Quantum Dot Light-Emitting Diodes Based on Microcavities

Ameliorating Uniformity and Color Conversion Efficiency in Quantum Dot-Based Micro-LED Displays through Blue–UV Hybrid Structures

Beyond OLED: Efficient Quantum Dot Light‐Emitting Diodes for Display and Lighting Application

Ultrahigh-resolution quantum-dot light-emitting diodes

High Efficiency Ultra‐Narrow Emission Quantum Dot Light‐Emitting Diodes Enabled by Microcavity

High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

Bright and Stable Yellow Quantum Dot Light‐Emitting Diodes Through Core–Shell Nanostructure Engineering

Shelf-Stable Green and Blue Quantum Dot Light-Emitting Diodes with High Efficiencies

Blue light-emitting diodes based on colloidal quantum dots with reduced surface-bulk coupling

23% power conversion efficiency light-emitting diodes using monolayer quantum dots

Boosting the efficiency of inverted quantum dot light-emitting diodes by balancing charge densities and suppressing exciton quenching through band alignment

83‐4: High‐Performance Inverted Green and Red InP Quantum‐dot Light Emitting Diodes with Robust ZnS Electron Transport Interlayer

A full high‐definition quantum dot light‐emitting diode‐on‐silicon microdisplay