Ultra-bright and energy-efficient quantum-dot LEDs by idealizing charge injection

Yizhen Zheng,Xing Lin,Jiongzhao Li,Jianan Chen,Zixuan Song,Yuan Gao,Huifeng Wang,Zikang Ye,Haiyan Qin,Xiaogang Peng

2024-06-14

Abstract:Lighting and display, relying on electric and optical down-conversion emission with sluggish power efficiency, account for >15% global electricity consumption1,2. In 2014, quantum-dot (QD) LEDs (QLEDs) with near-optimal external quantum efficiency emerged3 and promised a pathway to avoid the vast down-conversion energy loss4,5. Despite a decade of progress4-22, fabrication of energy-efficient QLEDs with application-relevant brightness remains elusive. Here, the main roadblock is identified as the oxidative species adsorbed in the nanocrystalline electron-injection layer of QLEDs, which is then addressed by a simple reductive treatment to simultaneously boosts electron conductivity and hole blockage of the electron-injection layer. The resulting sub-bandgap-driven QLEDs with optimal efficiency achieve ultra-high brightness across the entire visible spectrum at least 2.6-fold higher than existing benchmarks. The brightness fully satisfies the demands of various forms of lighting and display, which surges to a remarkable level sufficient for QD laser diodes with a moderate bias (~9 V). Optimized electron injection further enables new types of QD-blend LEDs for diffuse white-light sources surpassing the 2035 R&D targets set by the U.S. Department of Energy. Our findings open a door for understanding and optimizing carrier transport in nanocrystalline semiconductors shared by various types of solution-processed optoelectronic devices.

Applied Physics,Materials Science

What problem does this paper attempt to address?

This paper primarily addresses the challenges of achieving high brightness and energy efficiency in Quantum-Dot Light-Emitting Diodes (QLEDs). Existing QLEDs have shortcomings in both brightness and energy efficiency, especially in high-brightness applications. Researchers have proposed a simple reduction treatment method by identifying and solving the issue of oxide species adsorbing on the electron injection layer in QLEDs. This method enhances electron conductivity and hole blocking capability, enabling QLEDs to achieve extremely high brightness across the entire visible spectrum, at least 2.6 times higher than the existing benchmark. It also satisfies various lighting and display requirements. In addition, the optimized electron injection allows the new QD hybrid LEDs to become highly efficient scatter white light sources that surpass the U.S. Department of Energy's 2035 research goal. This research opens up new pathways for understanding and optimizing carrier transport in nanocrystalline semiconductors and holds significant implications for solution-processed optoelectronic devices.