Abstract:A quantum dot light‐emitting diode (QLED) is developed with UV‐vis‐NIR photosensitive characteristics based on a ZnO/QDs/ZnO multilayer structure. This device can respond to UV to NIR signals in self‐powered mode. Additionally, after UV light irradiation, the device achieves a maximum external quantum efficiency of 11.8% and a luminance of 64,549 cd m−2, with a record‐high luminance ON/OFF ratio of 5500%. Photosensitive quantum dot light‐emitting diodes (PSQLEDs) possess the dual capabilities of generating and detecting light signals, which is of significant importance for the development of miniaturized and integrated optoelectronic devices. However, the state‐of‐the‐art PSQLEDs can only detect light signals within a certain wavelength range, and require switching between the two functions under different bias voltage directions. In this work, The use of a ZnO/quantum dots (QDs)/ZnO multilayer (ZQZ ML) architecture as both the electron transport layer and the photosensitive layer is pioneered. The QDs in this structure are composed of narrow‐bandgap lead sulfide QDs and wide‐bandgap cadmium selenide QDs, successfully realizing a unique PSQLED device with C photosensitive characteristics. As a result, the as‐fabricated device can respond to illumination from 365 to 1300 nm, and the device achieves a photoresponse rate of 20.9 mA W−1 in self‐powered mode to UV light. After UV light irradiation, the maximum external quantum efficiency and maximum luminance of device reached 11.8% and 64,549 cd m−2, respectively. The device shows a record‐high luminance ON/OFF ratio of 5500%, which is beneficial for high contrast and accurate information display.

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