Review Body's Report

M. Stein

DOI: https://doi.org/10.1136/bmj.2.5707.485-g

1970-05-23

British Medical Journal

Abstract:

What problem does this paper attempt to address?

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Xiaokun Fan,Zhen Mu,Zhao Chen,Yunfeng Zhan,Fanyuan Meng,Yang Li,Guichuan Xing,Wai-Yeung Wong

DOI: https://doi.org/10.1016/j.cej.2023.142027

IF: 15.1

2023-01-01

Chemical Engineering Journal

Abstract:Near 100% photoluminescence quantum yield (PL QY) is the first target for designing luminescent quantum dots (QDs). Here, an alloyed QD with a core/shell structure of Cd0.194Zn0.806Se0.406S0.594/ZnS is synthesized and characterized by the feature of large core size (about 10 nm) and thin shell (around three ZnS monolayers). It exhibits an efficient green emission with the PL QY of 99.8% and ultra-fast radiative transition rate (kr) of 4.16 x 107 s-1. It demonstrates that the excited state will be rapidly decayed to its ground state through a radiative channel and less vulnerable to non-radiative processes. Under a high pump intensity (254.65 mu J cm - 2), the Cd0.194Zn0.806Se0.406S0.594/ZnS QD still owns a long biexciton decay lifetime (tau xx) of 1.05 ns and high biexciton QYxx of 25.1%, corresponding to a suppressed non-radiative Auger recombination. The Cd0.194Zn0.806Se0.406S0.594/ZnS QD based light-emitting diode exhibits a peak external quantum efficiency of 20.1% and brightness of over105 cd m-2 at 5.2 V. We believe that the Cd0.194Zn0.806Se0.406S0.594/ZnS QD not only provides a near-unity QY but also ensures its QD based light-emitting diode (QLED) with an excellent performance, which could be an excellent QD material for QLED applications.
Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes

Xuyong Yang,Fuqiang Ren,Yue Wang,Tao Ding,Handong Sun,Dongling Ma,Xia Wei Sun

DOI: https://doi.org/10.1038/s41598-017-15244-5

IF: 4.6

2017-11-07

Scientific Reports

Abstract:PbS based quantum dots (QDs) have been studied in great detail for potential applications in electroluminescent devices operating at wavelengths important for telecommunications (1.3–1.6 μm). Despite the recent advances in field of quantum dot light-emitting diode (QLED), further improvements in near-infrared (NIR) emitting device performance are still necessary for the widespread use and commercialization of NIR emitting QLED technology. Here, we report a high-performance 1.51-μm emitting QLED with inverted organic–inorganic hybrid device architecture and PbS/CdS core-shell structured quantum dots as emitter. The resultant QLEDs show a record device performance for the QLEDs in 1.5 μm emission window, with a maximum radiance of 6.04 Wsr−1 m−2 and peak external quantum efficiency (EQE) of 4.12%, respectively.

multidisciplinary sciences
Is CaMKII a link between inflammation and hypertrophy in heart?

Madhu V Singh,M. Anderson

DOI: https://doi.org/10.1007/s00109-011-0727-5

2011-01-29

Journal of Molecular Medicine

Abstract:
Lead Sulfide Quantum Dot-Linear Low-density Polyethylene Composites for Near-Infrared Mini-LEDs

Haorui Dong,Tongtong Xuan,Rong-Jun Xie

DOI: https://doi.org/10.1016/j.jlumin.2024.120707

IF: 3.6

2024-05-30

Journal of Luminescence

Abstract:Lead sulfide quantum dots (QDs), presenting near-infrared (NIR) emissions, have gained extensive interest within the realm of NIR light-emitting diodes (LEDs). However, the intricate surface defect passivation poses a major impediment that curbs broader applications of PbS QDs. To address it, we introduce linear low-density polyethylene (LLDPE) as a facilitating agent for the aggregation of PbS QDs, aiming to improve their optical properties by harnessing a stress-inducing effect. Compared to the bare PbS QDs that are luminescence silent, the PbS aggregates formed with the addition of LLDPE show a notable photoluminescence quantum yield (PLQY) as high as 20.7%. Moreover, the presence of LLDPE mitigates the oxidative degradation of lead ions on the PbS QD surface, thereby enhancing the stability of the PbS QDs through steric hindrance. Near-infrared nini-LEDs are demonstrated by combining the PbS QD/LLDPE composites with blue mini-LED chips, which show an emission maximum of 1517.9 nm, a full width at half maximum (FWHM) of 297.6 nm and an energy conversion efficiency (ECE) of 14.6%. The proposed method opens up new avenues for enhancing the optical properties of PbS QDs without using traditional passivation procedures.

optics
Non‐Toxic CuInS2/ZnS Colloidal Quantum Dot for Near‐Infrared Light‐Emitting Diodes

Li Jun Lim,Xiaofei Zhao,Zhi‐Kuang Tan

DOI: https://doi.org/10.1002/adma.202301887

IF: 29.4

2023-04-07

Advanced Materials

Abstract:Ternary CuInS2 quantum dots (QDs) with photoluminescence tunable from the visible to near‐infrared (NIR) region are promising light‐emitters for consumer electronics due to the absence of toxic elements such as Pb, Cd or As. Despite the compelling performance of visible emitting CuInS2 QDs, reports on NIR emission remain limited with modest efficiencies at wavelengths beyond 900 nm. In this work, we describe the facile synthesis of NIR emitting CuInS2/ZnS QDs through the use of a binary sulfur precursor, consisting of 1‐dodecanethiol (DDT) and hexamethyldisilathiane (HMDS). The reactive HMDS facilitated faster nucleation and led to a higher density of emissive Cu‐deficiency sites. The resulting QDs exhibit high photoluminescence quantum efficiency (PLQE) of 65% at a long emission wavelength of 920 nm. Using these QDs, we fabricated NIR light‐emitting diodes (LED) which attained an external quantum efficiency (EQE) of 8.2%. This efficiency is comparable to the best reported PbS and InAs QD LEDs, and its emission wavelength exceeds that of lead iodide perovskites. This work thus marks one of the first reports of efficient NIR LEDs based on environmentally‐benign CuInS2 QDs and may open up promising new applications in consumer electronic products. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Enabling Highly Efficient Neodymium Luminescence for Near‐Infrared Phosphor‐Converted Light‐Emitting Diode Applications

Kaina Wang,Jipeng Fu,Hongliang Dong,Bingyu Huang,Jinru Liu,Long Tian,Jing Feng,Chunzhen Yang,Chenjie Lou,Ligang Xu,Tianyi Sun,Huajie Luo,Shiqing Xu,Guowei Yin,Hongjie Zhang,Mingxue Tang

DOI: https://doi.org/10.1002/sstr.202400092

IF: 15.9

2024-05-25

Small Structures

Abstract:Herein, a highly efficient and thermal stability near‐infrared (NIR) phosphor under blue light‐emitting diode is designed. Quantitative and mechanistic studies of the luminescence of neodymium, supported by in‐depth crystal structure analysis, will shed light on the development of novel narrowband NIR phosphors with highly desired properties beyond conventional broadband emission. The prepared narrow‐band NIR LEDs show advantages for biomedical applications. Near‐infrared (NIR) phosphors have been widely used in biomedical applications based on their deep tissue penetration. However, the lack of blue‐pumped NIR phosphors with emission ranges beyond 1000 nm has greatly limited the development of NIR phosphor‐converted light‐emitting diodes (pc‐LEDs). Herein, a facile way to boost the luminescence efficiency and thermal stability by introducing the promoters of Ce3+ and Na+ into Nd3+‐doped SrS NIR phosphor is demonstrated, thus achieving light emitting at 850–1500 nm with a peak wavelength of ≈1070 nm. Through sensitization by the allowed 4f → 5d transition of Ce3+, the SrS: Nd3+ phosphors are excitable by using a commercial blue LED, attributing to the effective energy transfer between Nd3+ and Ce3+. Besides, the structural analysis and density functional theory calculations reveal the lattice distortion mechanism and geometry of doping ions contributed to the weakened thermal quenching effect and the increasing of internal quantum efficiency. The optimized NIR phosphor luminescence intensity remains at 91.8% of the initial intensity at 393 K, and the internal quantum efficiency increases to 42.8% from 31.7% of the sample without Na+ doping. The present exploration of Nd3+‐doped NIR phosphors will provide a reference for designing NIR pc‐LEDs with enhanced properties.
Hydrothermal Synthesis of ZnGa2O4 Nanophosphors with High Internal Quantum Efficiency for Near-Infrared pc-LEDs

Chengping Fang,Shuoheng Wang,Shuai Wei,Qingxian Xu,Zeyu Lyu,Sida Shen,Taixing Tan,Hongpeng You

DOI: https://doi.org/10.1039/d4dt00333k

IF: 4

2024-03-07

Dalton Transactions

Abstract:NIR luminescent materials have garnered widespread attention since their exceptional properties, with high tissue penetration, low absorption and high signal-to-noise ratio in the field of optical imaging. However, producing nanophosphors with high quantum yields of emitting infrared light with wavelengths above 1000nm remains a significant challenge. Here, we prepared a nanoscale ZnGa2O4:xCr3+,yNi2+ phosphor with well luminescence performance in near-infrared emission, which was synthesized via hydrothermal method and subsequent calcination process. By co-doped with Cr3+ and Ni2+, the ZnGa2O4 phosphor shows a strong broadband emission of 1100-1600nm in the second near-infrared (NIR II) region, owning to the energy transfer from Cr3+ to Ni2+ with an efficiency up to 90%. Meanwhile, Near-infrared phosphor-conversion LED (NIR pc-LED) device is fabricated based on ZnGa2O4:0.8% Cr3+,0.4%Ni2+ nanophosphor, under 100mA input current, the output power is 23.99mW, with a photoelectric conversion efficiency of 7.53%, which can be effectively applied in imaging and non-destructive. Additionally, the intensity ratio of INi/ICr of ZnGa2O4:0.8% Cr3+,0.4%Ni2+ with a high sensitivity value of 4.21% K-1 at 453 K under 410 nm excitation, indicating its potential for thermometry application.

chemistry, inorganic & nuclear
High-performance all-solution-processed quantum dot near-infrared-to-visible upconversion devices for harvesting photogenerated electrons

Nan Zhang,Haodong Tang,Kanming Shi,Weigao Wang,Weiqiao Deng,Bing Xu,Kai Wang,Xiao Wei Sun

DOI: https://doi.org/10.1063/1.5124735

IF: 4

2019-11-25

Applied Physics Letters

Abstract:All-solution-processed quantum dot (QD) upconversion devices were realized by constructing a colloidal PbS QD near-infrared (NIR ∼ 1 μm)-sensitive layer on the cathode side of a red CdSe quantum dot light-emitting diode (QLED). Different from conventional upconversion devices, we utilized the photogenerated electrons rather than the holes created in the NIR-sensitive layer to inject into the QLED for visible light emission. Consequently, we obtained high-performance devices with a maximum photon-to-photon conversion efficiency of 3.35% and a luminance on-off ratio of approximately 8 × 103. The results indicate that the device structure could be used to realize low-cost and portable high-performance QD-based upconversion devices via solution-processing.

physics, applied
An Ultraviolet–Visible and Near‐Infrared‐Responded Broadband NIR Phosphor and Its NIR Spectroscopy Application

Xufeng Zhou,Wanying Geng,Junyi Li,Yichao Wang,Jianyan Ding,Yuhua Wang

DOI: https://doi.org/10.1002/adom.201902003

IF: 9

2020-02-23

Advanced Optical Materials

Abstract:High‐radiance near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) are demanded for wearable biosensing devices and the properties of these pc‐LEDs are highly dependent on the performance of the NIR phosphor. An ultraviolet–visible and NIR‐responded broadband NIR NaScGe2O6:Cr3+ phosphor is reported. Under 490 nm excitation, NaScGe2O6:Cr3+ shows broad emission band from 700 to 1250 nm, which covers the first and second NIR windows. An NIR pc‐LED with radiant flux of 12.07 mW@350 mA is realized based on NaScGe2O6:Cr3+ and 450 nm blue LED chip. The ability of high‐power NIR light of the NIR pc‐LED to penetrate human tissues is observed successfully. Additionally, in NaScGe2O6:Cr3+, the luminescence performance of Cr3+ under 808 nm laser excitation is achieved for the first time.

materials science, multidisciplinary,optics
Broadband near-infrared emitting Cr3+-activated InGaO3(ZnO)4 phosphor and its application in pc-LEDs

Shuyang Chen,Jianhua Lin,Mingxiao Han,Jie Li,Qihao Zhang,YanLing Chen,Yinuo Wen,Jie Fu,Degang Deng,Liang Chen

DOI: https://doi.org/10.1016/j.materresbull.2023.112280

IF: 5.6

2023-08-01

Materials Research Bulletin

Abstract:In broadband near-infrared (NIR) phosphor converted to light-emitting diodes (pc-LEDs), Cr3+-activated phosphors have received a lot of attention. Herein, we developed a novel InGaO3(ZnO)4: xCr3+ (x = 0.001–0.02) with NIR broadband emission through a solid-state reaction at high temperature. Its excitation spectrum covers the blue light region, with the peak at 467 nm, which is suitable for blue light chip excitation. The optimum Cr3+ ion doping content is x = 0.01 and the emission spectrum ranges from 650 nm to 950 nm with a large full width at half maximum (FWHM) of 119 nm. Moreover, the internal quantum efficiency (IQE) of InGaO3(ZnO)4: 0.01Cr3+ phosphor is about 79%. Meanwhile, the phosphor exhibits good thermal stability due to the relatively weak electron-phonon coupling effect, and the emission intensity at 373 K can retain 57.7% of that at 303 K. The packaged pc-LED shows good NIR light penetration ability in spectral transmission tests, which indicates that the pc-LED has great application potential in portable devices as a light source.

materials science, multidisciplinary
Efficient near-infrared luminescence in LiInO2:Cr3+ phosphor for light-emitting-diodes

Yuefang Qin,Jiyou Zhong,Liwei Zeng,Long Chen,Weiren Zhao

DOI: https://doi.org/10.1016/j.optmat.2023.114284

IF: 3.754

2023-09-01

Optical Materials

Abstract:Broadband near-infrared (NIR) spectroscopy produced by efficient and miniaturized NIR phosphor-converted light-emitting diodes (pc-LEDs) has been utilized in portable and mobile devices to realize a variety of applications such as bio-imaging, food-quality analysis, and night-vision. However, developing blue-light excitable NIR phosphor material with efficient emission around 900 nm remains a great challenge. Herein, an efficient LiInO2:Cr3+ phosphors with an emission peak of 897 nm and a full width at half maximum (FWHM) of 129 nm excited by 468 nm were successfully synthesized under a protective atmosphere. The optimized sample shows a particularly high absorption efficiency (AE = 57.8%) and an excellent internal quantum efficiency (IQE = 42.4%), resulting in a relatively high external quantum efficiency (EQE = 24.5%) compared to the developed phosphors with emission peak around 900 nm. Disappointingly, the emission intensity at 373 K of this material retains only 29.6% of that at room temperature, and the strong electron-phonon-coupling (EPC) effect should be responsible for the relatively poor thermal stability. Thus, this work demonstrated an attempt to develop efficient broadband NIR phosphors for spectroscopy applications, and also performed a comprehensive investigation to understand this material.

materials science, multidisciplinary,optics
Glass-Crystallized Luminescence Translucent Ceramics Toward High-Performance Broadband NIR LEDs

Guojun Zheng,Wenge Xiao,Jianhong Wu,Xiaofeng Liu,Hirokazu Masai,Jianrong Qiu

DOI: https://doi.org/10.1002/advs.202105713

IF: 15.1

2022-01-01

Advanced Science

Abstract:Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) are newly emergent broadband light sources for miniaturizing optical systems like spectrometers. However, traditional converters with NIR phosphors encapsulated by organic resins suffer from low external quantum efficiency (EQE), strong thermal quenching as well as low thermal conductivity, thus limiting the device efficiency and output power. Through pressureless crystallization from the designed aluminosilicate glasses, here broadband Near-infrared (NIR) emitting translucent ceramics are developed with high EQE (59.5%) and excellent thermal stability (<10% intensity loss and negligible variation of emission profile at 150 degrees C) to serve as all-inorganic visible-to-NIR converters. A high-performance NIR phosphor-converted light emitting diodes is further demonstrated with a record NIR photoelectric efficiency (output power) of 21.2% (62.6 mW) at 100 mA and a luminescence saturation threshold up to 184 W cm(-2). The results can substantially expand the applications of pc-LEDs, and may open up new opportunity to design efficient broadband emitting materials.
Broadband Near‐Infrared Garnet Phosphors with Near‐Unity Internal Quantum Efficiency

Endale T. Basore,Wenge Xiao,Xiaofeng Liu,Jianhong Wu,Jianrong Qiu

DOI: https://doi.org/10.1002/adom.202000296

IF: 9

2020-04-20

Advanced Optical Materials

Abstract:Compact near‐infrared (NIR) light sources with broad emission band are essential to enable NIR spectroscopy compatible with portable devices, and phosphor‐converted light emitting diodes (pc‐LEDs) are efficient, low‐cost, and compact light sources. However, it is more challenging to develop highly efficient and thermally stable broadband NIR phosphors than conventional phosphors for white LEDs. Here, a series of solid solution phosphors with broadband NIR emission designed by cationic substitution in Cr3+ activated garnet Gd3Sc2Ga3O12 are reported. The internal quantum efficiency of Cr3+ emission can be significantly improved to nearly 100% via the substitution of ScO6 with smaller AlO6 octahedrons, which is attributed to the reduction of antisite defects. Moreover, the phosphor with optimized composition shows highly thermally stable emission, which renders the as‐fabricated pc‐LED with high‐power (750.8 mW) NIR emission covering the wavelength range of 700–1000 nm. The results could advance the development of NIR pc‐LEDs as high‐performance light sources for miniature NIR spectrometers.

materials science, multidisciplinary,optics
Near-Infrared Lead Chalcogenide Quantum Dots: Synthesis and Applications in Light Emitting Diodes

Haochen Liu,Huaying Zhong,Fankai Zheng,Yue Xie,Depeng Li,Dan Wu,Ziming Zhou,Xiao Wei Sun,Kai Wang

DOI: https://doi.org/10.1088/1674-1056/ab50fa

2019-10-25

Abstract:This paper reviews recent progress in the synthesis of near-infrared (NIR) lead chalcogenide (PbX; PbX=PbS, PbSe, PbTe) quantum dots (QDs) and their applications in NIR QDs based light emitting diodes (NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance PbX based NIR-QLEDs.

Applied Physics,Mesoscale and Nanoscale Physics
An Efficient Perovskite‐Like Phosphor with Peak Emission Wavelength at 850 nm for High‐Performance NIR LEDs

Wenqiang Tang,Dan Wu,Yu Xiao,Xiaoling Dong,Yue Wang,Wenping Zhou,Yifan Liu,Liangliang Zhang

DOI: https://doi.org/10.1002/adom.202202237

IF: 9

2022-12-18

Advanced Optical Materials

Abstract:A broad near‐infrared (NIR) emission band peaking at 850 nm as well as high internal (external) quantum efficiency of 72% (33.4%) can be achieved in perovskite‐like Mg4Ta2O9:Cr3+ phosphor. The NIR phosphor‐converted light‐emitting diodes (pc‐LED) with NIR emission covering the whole 700–1100 nm spectrum range have the potential to act as a compact light source for the miniature NIR spectroscopy applications. Near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) are an emerging light source demanded for the miniaturization of NIR spectroscopy. However, the photoelectric efficiency and spectral properties of NIR pc‐LEDs are still very limited due to a lack of efficient broadband NIR phosphors with peak emission wavelength >850 nm. Here, a novel Cr3+‐activated perovskite‐like Mg4Ta2O9 phosphor is reported, which exhibits a broad NIR emission band peaking at 850 nm with a high internal (external) quantum efficiency of 72% (33.4%). The fabricated NIR pc‐LED shows a broad emission band covering the whole 700–1100 nm spectrum range with a photoelectric conversion efficiency of 22.1% at 10 mA. This work may provide a new paradigm for the discovery of Cr3+ singly doped NIR phosphors with excellent performance.

materials science, multidisciplinary,optics
High-efficiency, Long-lifetime and Large-area Near-infrared QD-OLEDs

Zhen Jia,Haoyun Shao,Jingyi Xu,Yu Dai,Juan Qiao

DOI: https://doi.org/10.26434/chemrxiv-2022-x051f

2022-01-01

Abstract:Intrinsically flexible near-infrared (NIR) light sources are experiencing rapid growth in recent years. However, NIR light sources with a combination of high-efficiency, long-lifetime, and large-area remain challenging. Here, we realize high-efficiency, long-lifetime and large-area NIR light sources based on organic light-emitting diodes (OLEDs) and NIR-emitting PbS quantum dots (QDs) as color conversion layers. To obtain highly efficient PbS QDs, a unique additive composition comprising KCl and crown ethers is employed, which can significantly passivate trap states in the air and at room temperature, thus improving the photoluminescence quantum efficiency from 24% to 35% in solution and further to 45% in blend films. The well-passivated PbS QD films are then integrated with red OLEDs and the resulting QD-OLEDs exhibit high-performance NIR emission centered at 887 nm, a high external quantum efficiency of 5.2% at a radiance of 10 W sr-1 m-2, and superior operational stability with long lifetime T90 of 188 hours at the current density of 25 mA cm-2, which presents the best result for solution-processed NIR LEDs. We also construct a large-area NIR QD-OLED (5×5 cm2) with desirable uniform emission. This work opens a new avenue to achieve robust large-area NIR light sources for broad applications.
Efficient Perovskite-Based Near-Infrared Micro Light-Emitting Diode and Size-Effect Analysis

Wenjie Wei,Yikai Yun,Shaoqun Li,Zhuoying Jiang,Sijie Jiang,Jianfeng Du,Yuanyuan Tian,Hongqiang Luo,Jinchai Li,Kai Huang,Mengyu Chen,Cheng Li,Rong Zhang

DOI: https://doi.org/10.1109/led.2024.3434727

IF: 4.8157

2024-08-28

IEEE Electron Device Letters

Abstract:The state-of-the-art micro-LEDs based on group III-V chips face the challenges in size-effect and mass transfer. Recently, perovskite LEDs have rapidly developed, and their solution processability may show great advance in the miniaturization and integration with driving circuit. However, the majority of research on perovskite micro-LEDs (micro-PeLEDs) have been focused on visible light, leaving the study of near-infrared micro-PeLEDs in its infancy. Herein, we report a photolithography-compatible method for the first demonstration of near-infrared micro-PeLEDs. A peak external quantum efficiency of 5.9% is achieved with m pixel size and the size-effect of micro-PeLEDs is further discussed. The hyperspectral PL imaging shows the photoluminescence (PL) properties of the pixelized perovskite are not greatly affected by pixel size, and the electroluminescence (EL) analysis reveals that the size-related EL reduction is mainly caused by the inefficient current injection, which is easily to be optimized. Therefore, our work reveals that the perovskite with dispersed grains have an outstanding potential in the field of miniaturization.

engineering, electrical & electronic
High efficiency luminescence from PbS quantum dots embedded glasses for near-infrared light emitting diodes

Qiaoyun Yin,Wenchao Zhang,Yao Zhou,Ruzhi Wang,Zhiyong Zhao,Chao Liu

DOI: https://doi.org/10.1016/j.jlumin.2022.119065

IF: 3.6

2022-06-13

Journal of Luminescence

Abstract:PbS quantum dots (QDs) embedded glasses have been investigated for decades, but their applications are limited to the color filters and saturable absorbers for laser pulse generation so far, mainly due to the low photoluminescence quantum yield (PL QY) induced by the surface defects. Here, by increasing the sulfur to lead molar ratio in the glasses, surface defects of PbS QDs can be partially passivated and the fast trapping of charge carriers is reduced. As a result, PL QY of PbS QDs embedded glasses increases with larger sulfur to lead molar ratio, and PL QY as high as 46.9% is achieved. The improved PL QY along with good thermal and photo-stability makes the PbS QDs embedded glasses promising for near-infrared light generation. By integrating the PbS QDs embedded glass slab with light emitting diode (LED) chip, NIR LEDs with external quantum efficiency of 4.47% (@ ∼1.4 μm) with full width at half maximum larger than 140 nm are realized. Using this approach, it is also versatile to fabricate high-performance and broadband NIR LEDs with PbS QDs embedded glasses as light converters.

optics
Efficient, Stable, and Ultra‐Broadband Near‐Infrared Garnet Phosphors for Miniaturized Optical Applications

Misgana U. Dumesso,Wenge Xiao,Guojun Zheng,Endale T. Basore,Mingxue Tang,Xiaofeng Liu,Jianrong Qiu

DOI: https://doi.org/10.1002/adom.202200676

IF: 9

2022-06-02

Advanced Optical Materials

Abstract:The disordering of the neighboring cations is exploited for lowering the site symmetry of Cr3+ to promote its parity‐forbidden d–d transition probability in garnet phosphors; meanwhile, efficient Cr3+Yb3+ energy transfer is leveraged not only to enrich the short‐wave near‐infrared emission in 950–1100 nm, but also to greatly improve the internal quantum efficiency and thermal stability. Broadband near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) are recently regarded as the next‐generation smart light sources for miniaturized optical applications. However, their way to practical applications is largely obstructed by the lack of efficient NIR phosphors with photoluminescence (PL) spectrum covering the whole range of 700–1100 nm. Here, an ultra‐broadband NIR phosphor is designed by rationally constructing a Cr3+ → Yb3+ energy transfer system in a garnet crystal Lu2CaMg2Ge3O12 (LCMG). The disordering of the neighboring cations of LCMG is exploited for removing the inversion symmetry of octahedrally coordinated Cr3+ to promote its parity‐forbidden d–d transition probability; meanwhile, efficient Cr3+Yb3+ energy transfer is leveraged not only to enrich the short‐wave NIR PL in 950–1100 nm, but also to greatly improve the internal quantum efficiency (QE) (from 57.8% to 84.2%) as well as thermal stability. The resulting high external QE (35.6%) enables the demonstration of ultra‐broadband NIR pc‐LED with a record NIR output power of 93.2 mW (350 mA), which promises better performance of pc‐LEDs in non‐visible optical applications. This work provides a possible paradigm for developing ultra‐broadband NIR phosphors activated by transition metal ions.

materials science, multidisciplinary,optics
Broadband Ca3MgZrGe3O12:Cr3+ Garnet Phosphor for High-performance NIR pc-LED Application

Minnan Jiang,Xianju Zhou,Yan Deng,Yongjie Wang,Zhongxiang Shao,Li Li,Zhiyu Yang,Xiantong Tang

DOI: https://doi.org/10.1039/d4dt02128b

IF: 4

2024-09-19

Dalton Transactions

Abstract:The near-infrared (NIR) phosphor-converted light-emitting diode (pc-LED) is heavily reliant upon the performance of NIR phosphors. However, the current NIR pc-LEDs suffer from low photoelectric efficiency and insufficient near-infrared output power. In this study, Cr3+ doped Ca3MgZrGe3O12 phosphors leading to high-performance NIR pc-LED were developed for the first time. It features a robust and wide NIR emission that extends over the spectrum from 650 to 1100 nm with a full width at half maximum of 120 nm, a high quantum yield of 82% and excellent thermal stability of T50%=250oC and I150oC=80% when excited at 460 nm. The NIR pc-LED was constructed by combining the Ca3MgZrGe3O12:0.04Cr3+ phosphor with a blue LED chip, resulting in a device that exhibits a photoelectric conversion efficiency of 20% and a near-infrared output power of 54.19 mW when operated at a current of 100 mA. The obtained luminous efficacy is superior to the vast majority of current broadband near-infrared pc-LEDs. In addition, this NIR pc-LED exhibiting strong penetration and the applications in bio-imagines are demonstrated. The results indicate that Ca3MgZrGe3O12:Cr3+ are efficient NIR broadband phosphors for NIR pc-LEDs.

chemistry, inorganic & nuclear

Review Body's Report

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes

Is CaMKII a link between inflammation and hypertrophy in heart?

Lead Sulfide Quantum Dot-Linear Low-density Polyethylene Composites for Near-Infrared Mini-LEDs

Non‐Toxic CuInS2/ZnS Colloidal Quantum Dot for Near‐Infrared Light‐Emitting Diodes

Enabling Highly Efficient Neodymium Luminescence for Near‐Infrared Phosphor‐Converted Light‐Emitting Diode Applications

Hydrothermal Synthesis of ZnGa2O4 Nanophosphors with High Internal Quantum Efficiency for Near-Infrared pc-LEDs

High-performance all-solution-processed quantum dot near-infrared-to-visible upconversion devices for harvesting photogenerated electrons

An Ultraviolet–Visible and Near‐Infrared‐Responded Broadband NIR Phosphor and Its NIR Spectroscopy Application

Broadband near-infrared emitting Cr3+-activated InGaO3(ZnO)4 phosphor and its application in pc-LEDs

Efficient near-infrared luminescence in LiInO2:Cr3+ phosphor for light-emitting-diodes

Glass-Crystallized Luminescence Translucent Ceramics Toward High-Performance Broadband NIR LEDs

Broadband Near‐Infrared Garnet Phosphors with Near‐Unity Internal Quantum Efficiency

Near-Infrared Lead Chalcogenide Quantum Dots: Synthesis and Applications in Light Emitting Diodes

An Efficient Perovskite‐Like Phosphor with Peak Emission Wavelength at 850 nm for High‐Performance NIR LEDs

High-efficiency, Long-lifetime and Large-area Near-infrared QD-OLEDs

Efficient Perovskite-Based Near-Infrared Micro Light-Emitting Diode and Size-Effect Analysis

High efficiency luminescence from PbS quantum dots embedded glasses for near-infrared light emitting diodes

Efficient, Stable, and Ultra‐Broadband Near‐Infrared Garnet Phosphors for Miniaturized Optical Applications

Broadband Ca3MgZrGe3O12:Cr3+ Garnet Phosphor for High-performance NIR pc-LED Application