Hydrothermal Synthesis of ZnGa2O4 Nanophosphors with High Internal Quantum Efficiency for Near-Infrared pc-LEDs
Chengping Fang,Shuoheng Wang,Shuai Wei,Qingxian Xu,Zeyu Lyu,Sida Shen,Taixing Tan,Hongpeng You
DOI: https://doi.org/10.1039/d4dt00333k
IF: 4
2024-03-07
Dalton Transactions
Abstract:NIR luminescent materials have garnered widespread attention since their exceptional properties, with high tissue penetration, low absorption and high signal-to-noise ratio in the field of optical imaging. However, producing nanophosphors with high quantum yields of emitting infrared light with wavelengths above 1000nm remains a significant challenge. Here, we prepared a nanoscale ZnGa2O4:xCr3+,yNi2+ phosphor with well luminescence performance in near-infrared emission, which was synthesized via hydrothermal method and subsequent calcination process. By co-doped with Cr3+ and Ni2+, the ZnGa2O4 phosphor shows a strong broadband emission of 1100-1600nm in the second near-infrared (NIR II) region, owning to the energy transfer from Cr3+ to Ni2+ with an efficiency up to 90%. Meanwhile, Near-infrared phosphor-conversion LED (NIR pc-LED) device is fabricated based on ZnGa2O4:0.8% Cr3+,0.4%Ni2+ nanophosphor, under 100mA input current, the output power is 23.99mW, with a photoelectric conversion efficiency of 7.53%, which can be effectively applied in imaging and non-destructive. Additionally, the intensity ratio of INi/ICr of ZnGa2O4:0.8% Cr3+,0.4%Ni2+ with a high sensitivity value of 4.21% K-1 at 453 K under 410 nm excitation, indicating its potential for thermometry application.
chemistry, inorganic & nuclear