Abstract:Solution-processed PbS quantum dot light-emitting diodes (QLEDs) with emission in the second near-infrared window (NIR-II, 1100–1700 nm) are excellent candidates as light sources for optical communication, night vision, and biomedical monitoring. However, it is still a tremendous challenge to achieve high-radiance PbS QLEDs due to serious QD surface traps and unbalanced charge injection. Herein, highly monodisperse PbS QDs with tailored facet growth were successfully synthesized by the continuous precursor injection method. The synthesized PbS QDs revealed a tunable absorption peak from 1200 to 1700 nm with a supernarrow full width at half-maximum (fwhm; <105 nm). The tailored surface facet growth effectively decreased the nonpolar (100) facet and surface defects. Furthermore, with a multilayered organic–inorganic hybrid architecture of indium tin oxide (ITO)/poly(ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS)/poly(9,9-dioctylfluorene-co-N-(4-(3-methylpropyl))-diphenylamine) (TFB)/PbS QDs/ZnO/Al, the novel infrared PbS QLED exhibited an excellent maximum radiance of 16.14 W sr–1 m–2 at 6.15 V with a shortwave-infrared electroluminescence at ∼1530 nm. Importantly, the NIR-II QLEDs using facet-tailored PbS QDs with the EL peak between 1100 and 1700 nm represented extremely high radiances. The excellent performances are ascribed to the passivated PbS QDs with a tailored surface facet and the hybrid device structure for charge injection balance. This work provides an effective approach for the preparation of high-quality PbS QDs and is expected to significantly boost the potential commercial applications of PbS NIR-II QLEDs.

Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

High-performance all-solution-processed quantum dot near-infrared-to-visible upconversion devices for harvesting photogenerated electrons

Non‐Toxic CuInS2/ZnS Colloidal Quantum Dot for Near‐Infrared Light‐Emitting Diodes

Near-Infrared Nanophosphors Based on CuInSe2 Quantum Dots with Near-Unity Photoluminescence Quantum Yield for Micro-LEDs Applications

Highly Monodisperse PbS Quantum Dots with Facet Engineering for High-Radiance Light-Emitting Diodes in the NIR-II Window

Efficient silicon quantum dots light emitting diodes with an inverted device structure

CsPbBr3/CdS Core/Shell Structure Quantum Dots for Inverted Light-Emitting Diodes Application

Highly efficient near-infrared light-emitting diodes based on Zn:CuInSe2/ZnS//ZnS quantum dots with double shell engineering

Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture

Ligand-Solvent Coordination Enables Comprehensive Trap Passivation for Efficient Near-Infrared Quantum Dot Light-Emitting Diodes

Near-Infrared Lead Chalcogenide Quantum Dots: Synthesis and Applications in Light Emitting Diodes

High-efficiency, Long-lifetime and Large-area Near-infrared QD-OLEDs

Near Infrared Light-Emitting Diodes Based on Colloidal InAs/ZnSe Core/Thick-Shell Quantum Dots

Quantum-Dot Blue Light Emitting Diodes Utilizing Organic/Inorganic Hybrid Structures

High-Radiance Shortwave Infrared Light-Emitting Diodes Based on Highly Stable PbS Colloidal Quantum Dots

High efficiency luminescence from PbS quantum dots embedded glasses for near-infrared light emitting diodes

Efficient quantum dot infrared solar cells with enhanced low-energy photon conversion via optical engineering

Lead Sulfide Quantum Dot-Linear Low-density Polyethylene Composites for Near-Infrared Mini-LEDs

InP/ZnS/ZnS Core/Shell Blue Quantum Dots for Efficient Light‐Emitting Diodes

Efficient and Environmentally Friendly White Light-Emitting Diodes with InP-based Quantum Dots Embedded in Mesoporous Silica