Abstract:Interfacial engineering plays an important role in the performance improvement of quantum‐dot light‐emitting diodes (QLEDs). This work provides Cl‐passivated and Sn, Mg co‐doped ZnO nanoparticles as electron transport layer for enhancing the device performance of cadmium‐free QLEDs. The device exhibits an improved external quantum efficiency with a reduced efficiency roll‐off. Although cadmium (Cd)‐based nanocrystals have enabled high‐performance quantum‐dot light‐emitting diodes (QLEDs), their mass production is likely to be affected by environmental protection policies. Among all the potential Cd‐free candidates, Cu‐In‐Zn‐S (CIZS) nanocrystals (NCs) have attracted particular interests. Still, the performance of the corresponding LED is currently limited by imbalanced charge injection and luminescence quenching, which are both related to the ZnO‐based electron transporting layer (ETL). This work demonstrates that ZnO nanoparticles (NPs) doped with Sn, Mg (Zn1−x−ySnxMgyO), and passivated with Cl are promising to resolve the above issues. All‐solution‐processed QLEDs based on Cd‐free CIZS NCs are fabricated by using Zn0.9Sn0.1O NPs as the ETL, and the peak external quantum efficiency (EQEmax) was nearly twice that of ZnO (EQEmax = 1.74%). The main reason is that the incorporation of Sn can reduce the conductivity of ZnO by an order of magnitude. Combining the advantages of Zn0.9Sn0.1O, Zn0.8Sn0.1Mg0.1O@Cl NPs are designed by the co‐doping of Mg and Cl passivation. The EQEmax and current efficiency based on Zn0.8Sn0.1Mg0.1O and Zn0.8Sn0.1Mg0.1O@Cl as ETLs are further increased to 4.84%, 14.00 cd A−1 and 5.53%, 15.99 cd A−1, respectively. The positive effects of Mg ions can remarkably optimize energy level structure to balance charge injection, while Cl can further passivate defects. The findings offer a new guideline for developing Cd‐free light‐emitting diodes.

Capping Ligand Engineering of Cadmium‐Free AIZS Quantum Dots Toward Bright Electroluminescent Light‐Emitting Diodes by All‐Solution Process

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

1,2-Ethanedithiol Treatment for AgIn5S8/ZnS Quantum Dot Light-Emitting Diodes with High Brightness

Performance Enhancement of Cadmium‐Free Quantum‐Dot Light‐Emitting Diodes via Cl‐Passivated Zn1−x−ySnxMgyO Nanoparticles as Electron Transport Layers

Ligand-assisted structure tailoring of highly luminescent Cu-In-Zn-S/ZnS//ZnS quantum dots for bright and stable light-emitting diodes

Electrochemically Stable Ligands of ZnO Electron-Transporting Layers for Quantum-Dot Light-Emitting Diodes.

Boosting Cu─In─Zn─S‐based Quantum‐Dot Light‐Emitting Diodes Enabled by Engineering Cu─NiOx/PEDOT:PSS Bilayered Hole‐Injection Layer

Passivating CsPbBrxI3_x Quantum Dots Via Modifiers Film to Achieve Efficient Red Light-Emitting Diodes

High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

Ligand-Solvent Coordination Enables Comprehensive Trap Passivation for Efficient Near-Infrared Quantum Dot Light-Emitting Diodes

Enhanced Luminance of CdSe/ZnS Quantum Dots Light-Emitting Diodes Using ZnO-Oleic Acid/ZnO Quantum Dots Double Electron Transport Layer

Boosting Efficiency of InP Quantum Dots-Based Light-Emitting Diodes by an In-Doped ZnO Electron Transport Layer

High-efficiency, deep blue ZnCdS/CdxZn1-xS/ZnS quantum-dot-light-emitting devices with an EQE exceeding 18

Passivating CsPbBr I3− quantum dots via modifiers film to achieve efficient red light-emitting diodes

Efficient Green Light-Emitting Diodes Based on Alloy Quantum Dots with an Organic/Inorganic Hybrid Surface Passivation

Optimizing ZnO–Quantum Dot Interface with Thiol as Ligand Modification for High‐Performance Quantum Dot Light‐Emitting Diodes

High‐Efficiency Green InP Quantum Dot‐Based Electroluminescent Device Comprising Thick‐Shell Quantum Dots

Surface Defects Passivation of ZnSeTe/ZnSe/ZnS Quantum Dots by Iodine Ions for Highly Efficient Blue Light‐Emitting Diodes

High photoluminescence Ag-In-Ga-S quantum dots based on ZnX2-treated surface passivation

Highly efficient green InP-based quantum dot light-emitting diodes regulated by inner alloyed shell component

Aqueous Synthesis of 79% Efficient AgInGaS/ZnS Quantum Dots for Extremely High Color Rendering White Light-Emitting Diodes