Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Investigation on High-Energy Electron Irradiation on GaN Heterostructure by EBSD

Strain Relaxation of GaN Heterostructure Induced by High-Energy Electron Irradiation

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

Study on Irradiation Effect and Damage Mechanism in Cascode GaN HEMT Irradiated by 10 MeV Electron

Raman Scattering and X-Ray Diffraction Study of Neutron Irradiated GaN Epilayers

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Surface Effects on the Luminescence Degradation of Hydride Vapor-Phase Epitaxy-Grown Gan Induced by Electron-Beam Irradiation

Swelling or Erosion on the Surface of Patterned Gan Damaged by Heavy Ion Implantation

Damage Evolution in Gan under Mev Heavy Ion Implantation

Micro-Raman and Photoluminescence Studies of Neutron-Irradiated Gallium Nitride Epilayers

Study of Radiation Damage in Mg+-implanted GaN

Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam

Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation

Impact of electron irradiation on semi-insulating and conductive β-Ga 2 O 3 single crystals

Characteristics of High-Energy N+-Implanted Damage in Gasb

Impact of 700keV Ni++ ion irradiation on structural and optical properties of GaN

Experimental study of the Single Event Effects in E-mode GaN HEMT with Heavy Ion Irradiation

Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs