Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Raman Scattering and X-Ray Diffraction Study of Neutron Irradiated GaN Epilayers

Micro-Raman and Photoluminescence Studies of Neutron-Irradiated Gallium Nitride Epilayers

Strain Relaxation of GaN Heterostructure Induced by High-Energy Electron Irradiation

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Investigation on High-Energy Electron Irradiation on GaN Heterostructure by EBSD

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

A Raman Scattering Study on Ion-Implanted Can

Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

A refined numerical simulation approach to assess the neutron irradiation effect on the mechanical behavior of wurtzite GaN

Infrared studies of GaN1-xPx ternary alloys

Infrared Spectrum of GaN1-xPx Ternary Alloy

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Raman Investigation on the Surface Carrier Concentration of Single GaN Microrod Grown by MOCVD

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam

Defect-curing effects of fast neutrons on n-type GaN

Au ion irradiation induces ultralow thermal conductivity in GaN

Native Defects in InxGa1−xN Alloys

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001)

Relationship of Background Carrier Concentration and Defects in GaN Grown by Metalorganic Vapor Phase Epitaxy