Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Defect-curing effects of fast neutrons on n-type GaN

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Raman Scattering and X-Ray Diffraction Study of Neutron Irradiated GaN Epilayers

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Fast neutron irradiation effects on AlGaN deep ultraviolet light emitting diodes

Radiation-defect-dependent photoconductivity transients and photoluminescence in semi-insulating GaN

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

A refined numerical simulation approach to assess the neutron irradiation effect on the mechanical behavior of wurtzite GaN

Micro-Raman and Photoluminescence Studies of Neutron-Irradiated Gallium Nitride Epilayers

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

First-Principles Exploration of Defect-Pairs in GaN

Au ion irradiation induces ultralow thermal conductivity in GaN

Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation

Effects of gamma irradiation on non-polar GaN films deposited on sapphire using pulsed laser deposition

X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds

Donor and Acceptor Characteristics of Native Point Defects in GaN

Current Status of Carbon‐Related Defect Luminescence in GaN

Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure