Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure

Investigation on High-Energy Electron Irradiation on GaN Heterostructure by EBSD

Strain Relaxation of GaN Heterostructure Induced by High-Energy Electron Irradiation

Impact of electron irradiation on semi-insulating and conductive β-Ga 2 O 3 single crystals

Micro-Raman and Photoluminescence Studies of Neutron-Irradiated Gallium Nitride Epilayers

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Radiation-defect-dependent photoconductivity transients and photoluminescence in semi-insulating GaN

Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces

Surface Effects on the Luminescence Degradation of Hydride Vapor-Phase Epitaxy-Grown Gan Induced by Electron-Beam Irradiation

Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped Gan

Effects of isochronal thermal annealing and hydrogenation on photoluminescence from n-type GaN films grown by metalorganic vapor phase epitaxy

Study of Radiation Damage in Mg+-implanted GaN

On the origin of Blue Luminescence in Mg doped GaN

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Study on Irradiation Effect and Damage Mechanism in Cascode GaN HEMT Irradiated by 10 MeV Electron

Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films

Optical Properties of Mg-implanted GaN

Fast neutron irradiation effects on AlGaN deep ultraviolet light emitting diodes

High Performance Gallium Nitride Based Blue Light Emitting Diode Material Epitaxy and Dry Etching Fabrication Technology

Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

Photoluminescence of Mg-Doped GaN Epilayers at Different Concentrations