Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

Fermi-level Stabilization Energy in Group III Nitrides

Native Defects in InxGa1−xN Alloys

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Photoluminescence of Energetic Particle-Irradiated Inxga1-Xn Alloys

Investigation on High-Energy Electron Irradiation on GaN Heterostructure by EBSD

Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

Effects Of Point Defects On Thermal And Thermoelectric Properties Of Inn

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Radiation-induced defects in the InGaN/GaN superlattice structure

Raman Scattering and X-Ray Diffraction Study of Neutron Irradiated GaN Epilayers

Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation

Surface Electronic Properties of N‐ and P‐type InGaN Alloys

Impact of 700keV Ni++ ion irradiation on structural and optical properties of GaN

Au ion irradiation induces ultralow thermal conductivity in GaN

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure

Wet etching of GaN damaged by heavy ion irradiation

Modification of β-gallium oxide electronic properties by irradiation with high-energy electrons

Growth of In‐rich and Ga‐rich InGaN Alloys by MOCVD and Fabrication of InGaN‐based Photoelectrodes