Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Wet etching of GaN damaged by heavy ion irradiation

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Enhanced Wet Etching of Patterned GaN with Ion Implantation

Damage Evolution in Gan under Mev Heavy Ion Implantation

Etching Damage Analysis and Optimization of Inductively Coupled Plasma Etching of GaN

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

Plasma etching of III-V semiconductors and mechanism of crystalline damage

Study of Radiation Damage in Mg+-implanted GaN

Etching Damage and Its Recovery in N-Gan by Reactive Ion Etching

Plasma etching ofⅢ-Ⅴsemiconductors and mechanism of crystalline damage

Au ion irradiation induces ultralow thermal conductivity in GaN

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

Characterization of anisotropic wet etching of Gallium Nitride for surface orientations of the crystallographic zone in H 3 P O 4 etchant

Application of Wet Chemical Etching in GaN-based Materials

Research on Evolution of Relevant Defects in Heavily Mg-Doped GaN by H Ion Implantation Followed by Thermal Annealing

Excellent wet etching technique using pulsed anodic oxidation for homoepitaxially grown GaN layer

Strain Relaxation of GaN Heterostructure Induced by High-Energy Electron Irradiation

Etch-Pits, of Gan Films with Different Etching Methods