Abstract:The modification of GaN with Au nanoparticles is a promising way for manipulating optical properties in optoelectronics and enhancing the sensitivity of GaN-based substrates used in Surface Enhanced Raman Spectroscopy. Ion implantation is an attractive method for the preparation of high-purity metal nanoparticles on the surface or within the bulk of solids, although this process in crystals is not yet fully understood. Here we study the specific stages of Au nanoparticle formation in c-plane GaN crystals implanted with 1.85 MeV Au ions to the fluence range of 1.5×1016 - 7×1016 cm−2. The implanted samples were annealed at 800 °C in an ammonia atmosphere for 20 minutes to support the nucleation of Au nanoparticles and prevent surface decomposition. The structural and optical properties of the samples were investigated by a combination of Rutherford backscattering spectroscopy in channeling mode (RBS-C), Transmission Electron Microscopy (TEM), Raman spectroscopy, photoluminescence (PL) and diffuse-reflectance spectroscopy (DRS). The two damaged regions, namely at the depth and at the surface, were identified. The depth region exhibits saturation of damage, unlike the surface region reaching an amorphous state for the highest implantation fluence. RBS-C revealed multimodal Au depth profiles for higher ion fluences, which were subsequently redistributed after thermal annealing due to the formation of Au nanoparticles, as confirmed by TEM. Au nanoparticles with fcc structure have been successfully synthesized with the Au-ion implantation fluence of 5×1016 cm−2 with the sizes mostly of 4 – 20 nm resulting in increased optical scattering and absorption within the spectral range of 500 – 700 nm associated with surface plasmon resonance (SPR) and the emergence of blue (2.8 eV) and red (2 eV) photoluminescence bands linked to the combined effect of SPR and implantation-induced defects.

Enhanced Wet Etching of Patterned GaN with Ion Implantation

Swelling or Erosion on the Surface of Patterned Gan Damaged by Heavy Ion Implantation

Wet etching of GaN damaged by heavy ion irradiation

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

Damage Evolution in Gan under Mev Heavy Ion Implantation

Excellent wet etching technique using pulsed anodic oxidation for homoepitaxially grown GaN layer

Evolution of Au nanoparticles in c-plane GaN under the heavy ion implantation and their optical properties

Ultradeep electron cyclotron resonance plasma etching of GaN

Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

Electrochemical etching of highly conductive GaN single crystals

Enhanced Damage Buildup in C+-implanted GaN Film Studied by a Monoenergetic Positron Beam

Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux

Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

Catalyst and Processing Effects on Metal-Assisted Chemical Etching for the Production of Highly Porous Gan

Structure and Luminescence of A-Plane GaN on R-Plane Sapphire Substrate Modified by Si Implantation*

Formation of GaN nanostructures with various morphologies by photo-assisted electroless chemical etching

Chemical Etching of Freestanding N-polar GaN in Control of the Surface Morphology

Light-assisted wet etching of semiconductor nitride GaN

Morphological Evolution and Characterization of GaN Pyramid Arrays Fabricated by Photo-Assisted Chemical Etching

Etching Damage Analysis and Optimization of Inductively Coupled Plasma Etching of GaN