Abstract:We report on the structural, electrical, and optical characterization of GaN epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on SiNx and TiNx porous templates in order to reduce the density of extended defects. Observations by transmission electron microscopy (TEM) indicate an order of magnitude reduction in the dislocation density in GaN layers grown on TiNx and SiNx networks (down to similar to 10(8) cm(-2)) compared with the control GaN layers. Both SiNx and TiNx porous network structures are found to be effective in blocking the threading dislocation from penetrating into the upper layer. Supporting these findings are the results from X-Ray diffraction and low temperature photoluminescence (PL) measurements. The linewidth of the asymmetric X-Ray diffraction (XRD) (10 (1) under bar2) peak decreases considerably for the layers grown with the use of SiNx and TiNx layers, which generally suggests the reduction of edge and mixed threading dislocations. In general, further improvement is observed with the addition of a second SiNx layer. The room temperature decay times obtained from biexponential fits to time-resolved photoluminescence (TRPL) data are increased with the inclusion of SiNx and TiNx layers. TRPL results suggest that primarily point-defect and impurity-related nonradiative centers are responsible for reducing the lifetime. The carrier lifetime of 1.86 ns measured for a TiNx network sample is slightly longer than that for a 200 mu m-thick high quality freestanding GaN. Results on samples grown by a new technique called crack-assisted lateral overgrowth, which combines in situ deposition of SiNx mask and conventional lateral overgrowth, are also reported.

Epitaxy of GaN in High Aspect Ratio Nanoscale Holes over Silicon Substrate

The Epitaxy of GaN in Deep and Submicron Holes over Si Substrate

Reduction Mechanisms for Dislocation Densities in GaN Heteroepitaxy over Si Substrate Patterned with a Serpentine Channel Structure

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.

Epitaxial Growth of GaN-based Heterostructures of High Quality on Si Substrates Using a Large Lattice-Mismatch Induced Stress Control Technology

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures

In Situ Pendeoepitaxy of GaN Using Heteroepitaxial AlGaN∕GaN Cracks

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

Coordinated Stress Management and Dislocation Control in GaN Growth on Si (111) Substrates by Using a Carbon Nanotube Mask.

Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth

Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates

Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors

Horizontal Defects Parallel to the Interface in GaN Pyramids

Characterization of Gan Epitaxial Films Grown on Sinx and Tinx Porous Network Templates

High-quality GaN Epitaxially Grown on Si Substrate with Serpentine Channels

Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth