Abstract:In the past two decades, using dielectric materials such as SiO2 as a mask for the lateral epitaxial growth of gallium nitride (GaN) has matured, but the properties of films using amorphous mask materials are already difficult to improve, which limits the application of GaN. In this study, the quality of GaN films was enhanced by epitaxial lateral overgrowth (ELOG) on graphene mask/GaN template by metal-organic chemical vapour deposition (MOCVD). We found two types of nucleation and growth mode of GaN on compound substrate, and that graphene was slowly and continuously destroyed during growth. Using scanning transmission electron microscope (STEM) and Raman spectroscopy to analyse the graphene between the GaN epilayer and the substrate at various periods of growth, the results showed that graphene was stable and had a distinct layer structure at the initial stage of growth, and as the growth processed, the graphene masks were disrupted due to the decomposition of the GaN of substrate, and eventually air gaps of approximately 240 nm appeared at the positions of graphene masks. Although graphene is gradually decomposed, graphene masks still effectively block the dislocation from extending into the epilayer in the process, and GaN still maintains the trend of ELOG. The dislocation density of the GaN film is Â , which can be estimated visually by cathodoluminescence (CL). This feature of graphene provides a valuable strategy for the future research of large area self-standing GaN films on GaN templates.

High-quality GaN Epitaxially Grown on Si Substrate with Serpentine Channels

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

Defect Reduction Via Selective Lateral Epitaxy of Gan on an Innovative Masked Structure with Serpentine Channels

Wafer-scale Heteroepitaxy GaN Film Free of High-Density Dislocation Region with Hexagonal 3D Serpentine Mask

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance Via Serpentine Channel Patterned Mask.

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.

Coordinated Stress Management and Dislocation Control in GaN Growth on Si (111) Substrates by Using a Carbon Nanotube Mask.

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

The Epitaxy of GaN in Deep and Submicron Holes over Si Substrate

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Reduction Mechanisms for Dislocation Densities in GaN Heteroepitaxy over Si Substrate Patterned with a Serpentine Channel Structure

Epitaxial Lateral Overgrowth of High Quality GaN by MOCVD

High Quality GaN Grown by Epitaxial Lateral Overgrowth Technique and Epitaxial Defects Observation

Stress and Dislocation Control of GaN Epitaxial Films Grown on Si Substrates and Their Application in High-Performance Light-Emitting Diodes

Epitaxial Lateral Overgrowth of GaN Using Hexagonal Patterned PECVD and Wet Transferred Graphene Masks by MOCVD

Growth of High-Quality AlGaN Epitaxial Films on Si Substrates

Graphene‐Assisted Epitaxy of High‐Quality GaN Films on GaN Templates

Wafer-scale crack-free 10 µm-thick GaN with a dislocation density of 5.8 × 107 cm−2 grown on Si

Study on Nucleation and Growth Mode of GaN on Patterned Graphene by Epitaxial Lateral Overgrowth