Abstract:As well-known,heteroepitaxial growth on sapphire is mainly employed to obtain optoelectronic(devices) because there is no suitable substrate matching with GaN.Therefore,the GaN layer suffers from a stress due to large difference in lattice constants and thermal expansion coefficients between the GaN and sapphire.To improve the quality of devices,the epitaxial lateral overgrowth(ELO) technique is applied to GaN.ELO-GaN on patterned SiO_2/GaN/α-Al_2O_3 substrate is grown by metalorganic chemical vapor deposition(MOCVD).First,a high quality 3 μm thick layer of GaN is grown by MOCVD.Next,standard deposition and photolithographic techniques are employed to prepare a set of parallel SiO_2 stripes oriented along a(〈11-00〉) GaN crystal direction separated by window areas which expose the underlying GaN.A second deposition of GaN onto this patterned substrate is then initiated.During the initial GaN growth,the SiO_2 stripes function as nonwettable surfaces and no GaN deposition occurs on them.However,once the GaN film growth from the window stripes reaches the tops of the SiO_2 stripes,epitaxial lateral overgrowth of GaN commences.The GaN thickness of the second step growth is about 10 μm.The results of a systematic study of the ELO-GaN on sapphire are reported.Atomic force microscopy(AFM) images showed that the surface of ELO-GaN is smooth and that there are linear-configuration hillocks in the middle of mask region,which are caused by the misorientation of crystalline when the ELO-GaN coalesce above the masks.The X-ray diffraction(XRD) curve revealed that the tilts in the(〈11-20〉) direction between GaN in window regions and mask regions are about 1.2°.Raman scattering spectrum revealed that the stress in the mask region is smaller than that in the window region and also the quality of GaN is much higher in the mask region.As a result,the quality of GaN crystalloid is effectively improved by MOCVD using the ELO technique.

Defect Reduction Via Selective Lateral Epitaxy of Gan on an Innovative Masked Structure with Serpentine Channels

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

High-quality GaN Epitaxially Grown on Si Substrate with Serpentine Channels

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance Via Serpentine Channel Patterned Mask.

Wafer-scale Heteroepitaxy GaN Film Free of High-Density Dislocation Region with Hexagonal 3D Serpentine Mask

A New Selective Area Lateral Epitaxy Approach for Depositing A-Plane Gan over R-Plane Sapphire

Lateral Epitaxial Overgrowth of GaN Films on Patterned Sapphire Substrates Fabricated by Wet Chemical Etching

Epitaxial Lateral Overgrowth of High Quality GaN by MOCVD

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers.

Anisotropic Defect Reduction in Non-Polar A-Plane Gan Grown by Hydride Vapor Phase Epitaxy on Maskless Patterned Templates

Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask

Epitaxial Lateral Overgrowth of GaN Using Hexagonal Patterned PECVD and Wet Transferred Graphene Masks by MOCVD

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.

Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates

A Self-Disappear-mask for Epitaxial Lateral Overgrowth of GaN Films

Graphene‐Assisted Epitaxy of High‐Quality GaN Films on GaN Templates

Growth Evolution and Microstructural Characterization of Semipolar (112̄2) GaN Selectively Grown on Etched R-Plane Sapphire

Reduction of structural defects in a -plane GaN epitaxy by use of periodic hemispherical patterns in r -plane sapphire substrates

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD