Abstract:As well-known,heteroepitaxial growth on sapphire is mainly employed to obtain optoelectronic(devices) because there is no suitable substrate matching with GaN.Therefore,the GaN layer suffers from a stress due to large difference in lattice constants and thermal expansion coefficients between the GaN and sapphire.To improve the quality of devices,the epitaxial lateral overgrowth(ELO) technique is applied to GaN.ELO-GaN on patterned SiO_2/GaN/α-Al_2O_3 substrate is grown by metalorganic chemical vapor deposition(MOCVD).First,a high quality 3 μm thick layer of GaN is grown by MOCVD.Next,standard deposition and photolithographic techniques are employed to prepare a set of parallel SiO_2 stripes oriented along a(〈11-00〉) GaN crystal direction separated by window areas which expose the underlying GaN.A second deposition of GaN onto this patterned substrate is then initiated.During the initial GaN growth,the SiO_2 stripes function as nonwettable surfaces and no GaN deposition occurs on them.However,once the GaN film growth from the window stripes reaches the tops of the SiO_2 stripes,epitaxial lateral overgrowth of GaN commences.The GaN thickness of the second step growth is about 10 μm.The results of a systematic study of the ELO-GaN on sapphire are reported.Atomic force microscopy(AFM) images showed that the surface of ELO-GaN is smooth and that there are linear-configuration hillocks in the middle of mask region,which are caused by the misorientation of crystalline when the ELO-GaN coalesce above the masks.The X-ray diffraction(XRD) curve revealed that the tilts in the(〈11-20〉) direction between GaN in window regions and mask regions are about 1.2°.Raman scattering spectrum revealed that the stress in the mask region is smaller than that in the window region and also the quality of GaN is much higher in the mask region.As a result,the quality of GaN crystalloid is effectively improved by MOCVD using the ELO technique.

Anisotropic Defect Reduction in Non-Polar A-Plane Gan Grown by Hydride Vapor Phase Epitaxy on Maskless Patterned Templates

Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

Lateral Epitaxial Overgrowth of Nitrogen Polar GaN on Smooth Nitrogen Polar GaN Templates by Metalorganic Chemical Vapor Deposition

Defect Reduction Via Selective Lateral Epitaxy of Gan on an Innovative Masked Structure with Serpentine Channels

Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates Using a GaN Intermedial Layer

Defect Reduction In (11(2)Over-Bar-0) A-Plane Gan By Two-Stage Epitaxial Lateral Overgrowth

Epitaxial Lateral Overgrowth Of Gan By Hvpe And Movpe

Structural Properties of Laterally Overgrown Gan

Spatially Resolved and Orientation Dependent Raman Mapping of Epitaxial Lateral Overgrowth Nonpolar A-Plane GaN on R-Plane Sapphire.

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates

Reduction of structural defects in a -plane GaN epitaxy by use of periodic hemispherical patterns in r -plane sapphire substrates

Defect-related Anisotropic Surface Micro-Structures of Nonpolar A-Plane GaN Epitaxial Films

Anisotropic structural characteristics of GaN templates and coalesced epitaxial lateral overgrown films deposited on sapphire

Influence of Lateral Growth on the Surface Pit Formation of GaN Heteroepitaxial Film Grown by MOCVD

Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD

Anisotropic Structural Characteristics of (112̄0) GaN Templates and Coalesced Epitaxial Lateral Overgrown Films Deposited on (101̄2) Sapphire

Reduction Mechanisms for Dislocation Densities in GaN Heteroepitaxy over Si Substrate Patterned with a Serpentine Channel Structure

Epitaxial Lateral Overgrowth of GaN Using Hexagonal Patterned PECVD and Wet Transferred Graphene Masks by MOCVD