Abstract:Remote heteroepitaxy is known to yield semiconductor films with better quality. However, the atomic mechanisms in systems with large mismatches are still unclear. Herein, low-strain single-crystalline nitride films are achieved on highly mismatched (∼16.3%) sapphire via graphene-assisted remote heteroepitaxy. Because of a weaker interface potential, the in-plane compressive strain at the interface releases by 30%, and dislocations are prevented. Meanwhile, the lattice distortions in the epilayer disappear when the structure climbs over the atomic steps on substrates because graphene renders the steps smooth. In this way, the density of edge dislocations in as-grown nitride films reduces to the same level as that of the screw dislocations, which is rarely observed in heteroepitaxy. Further, the indium composition in InxGa1–xN/GaN multiquantum wells increases to ∼32%, enabling the fabrication of a yellow light-emitting diode. This study demonstrates the advantages of remote heteroepitaxy for bandgap tuning and opens opportunities for photoelectronic and electronic applications.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.2c00632.Methods, batch synthesized graphene/sapphire composite substrates (Figure S1), Raman spectra of graphene (Figure S2), atomic characterizations of the interface (Figure S3), calculations of the lattice mismatch, out of plane lattice fluctuations (Figure S4), calculations about the offset and strains near steps (Figure S5), surface potential of monolayer graphene covered GaN (Figure S6), XRD of the as-grown GaN film and MQWs (Figure S7), In composition measurement of a traditional blue LED (Figure S8) (PDF)This article has not yet been cited by other publications.

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