Stress Control and Dislocation Reduction in the Initial Growth of GaN on Si (111) Substrates by Using a Thin GaN Transition Layer

Kun Wang,Mengda Li,Zhijian Yang,Jiejun Wu,Tongjun Yu

DOI: https://doi.org/10.1039/c9ce00744j

IF: 3.756

2019-01-01

CrystEngComm

Abstract:A thin GaN transition layer technology is proposed to control stress and reduce the dislocation density in the initial GaN growth.

What problem does this paper attempt to address?

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Kai Yang,Bin Lin,Chao Xin,Liang Chen,Tieying Ma

DOI: https://doi.org/10.1109/sslchina.2013.7177374

2013-01-01

Abstract:A finite element model based on coupled field was established to analyze and design high quality GaN epilayers grown on Si substrate with thin variable composition graded Al x Ga 1-x N interlayers. Theoretical simulation shows that Al x Ga 1-x N interlayers can effectively reduce the tensile stress which generated in the cooling process between Si and GaN for thermal mismatch. When the Al x Ga 1-x N is single component, with the proportion of Al is larger, the thermal stress will decrease. In this case, the maximum stress reduces 13.8%, but the distribution uniformity of stress make worse. When the Al x Ga 1-x N is variable composition graded, the stress of GaN epilayers reduced significantly. Further analysis showed that bigger x at the lower interlayer (near the Si substrate) and smaller x at the upper interlayer (near the GaN epilayers) of Al x Ga 1-x N interlayers simultaneous can reduce the risk of cracks and make the GaN quality better. The calculation results show that without considering the effect of thermal mismatch and the lattice mismatch, before the experiments if we carefully design the interlayers structural through finite element model can effectively reduce the residual thermal stress. It is an effective way to save cost and time.
Coordinated Stress Management and Dislocation Control in GaN Growth on Si (111) Substrates by Using a Carbon Nanotube Mask.

Kun Wang,Tongjun Yu,Yang Wei,Mengda Li,Guoyi Zhang,Shoushan Fan

DOI: https://doi.org/10.1039/c8nr10289a

IF: 6.7

2019-01-01

Nanoscale

Abstract:A novel method is proposed to realize coordinated stress management and dislocation control in GaN growth on Si (111) substrates. This method is facilely implemented by using a unique carbon nanotube (CNT) mask with a nanoscale diameter and a high fill factor. It is found that most dislocations are directly blocked by high-density nanovoids formed around CNTs within 150 nm from the GaN/AlN interface. In this way, without dislocation inclination, the threading dislocation density (TDD) of the GaN epilayer is dramatically reduced. Thus the compressive stress relaxation due to dislocation inclination during GaN growth is significantly decreased and more compressive stress can be preserved. In addition, the high-density nanovoids also contribute to decreasing the thermal tensile stress during cooling down. As a result, coordinated stress management and dislocation control are realized and a 3.5 μm-thick crack-free GaN epilayer with a homogeneously low TDD of 2.51 × 108 cm-2 is obtained. With the facile fabrication of the CNT mask and a simple epitaxy procedure, the quality of the GaN epilayer grown on Si substrates is greatly improved, which extends the application of the nanomaterial in the GaN epitaxy on the Si substrate and demonstrates great application potential for high-performance electronic devices.
Epitaxial Growth of GaN-based Heterostructures of High Quality on Si Substrates Using a Large Lattice-Mismatch Induced Stress Control Technology

J. P. Chen,X. L. Yang,M. J. Wang,B. Shen

DOI: https://doi.org/10.1109/iciprm.2016.7528763

2016-01-01

Abstract:A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2240 cm 2 /Vs. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer.
Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

Wenjun Liu,Yachao Zhang,Jincheng Zhang,Yixin Yao,Baiqi Wang,Jinbang Ma,Kai Chen,Yue Hao

DOI: https://doi.org/10.1016/j.jlumin.2023.120016

IF: 3.6

2023-11-01

Journal of Luminescence

Abstract:An innovative AlPN nucleation layer is proposed for the growth of high quality GaN on Si. AlPN nucleation layer is prepared on Si substrate by metal organic chemical vapor deposition to explore the stress and dislocation adjustment mechanism. It is found that there are stress-related antisite defects in the P-doped lattice. In addition, the incorporation of P makes the dislocation densities of screw dislocations and edge dislocations have different trends, which can realize the independent control of the different types of dislocation densities. A hexagonal-cubic-phase mixed structure model is proposed to analyze and explain the variation trends of dislocation densities and stress. This work not only puts forward a new type of nitride material, which provides an idea for the growth of high-quality GaN on Si. On the other hand, it is of great significance to perfect the independent regulation mechanism of dislocations.

optics
Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition

Xin Jia,Junjun Wei,Yabo Huang,Siwu Shao,Kang An,Yuechan Kong,Jinglong Liu,Liangxian Chen,Chengming Li

DOI: https://doi.org/10.1007/s10853-020-05743-8

IF: 4.5

2021-01-12

Journal of Materials Science

Abstract:The fabrication of GaN-on-diamond structure by the process of diamond growth on GaN technology is becoming more and more attractive for high-power GaN devices. However, due to the high-temperature steps employed during the GaN epitaxial layer transfer process, significant stress accumulates in the GaN-on-diamond structure and induces the formation of cracks or deformations in the GaN layer. To improve the stress characteristics of the GaN layer, in this work, dual-sided diamond film deposition was carried out to accomplish the GaN-on-diamond structure. The surface morphology, interface microstructure and crystal quality of diamond on GaN were analyzed by using scanning electron microscopy, atomic force microscopy, transmission electron microscopy and X-ray diffraction. The results showed that the stress accumulation originating from the GaN epitaxial layer transfer process was effectively alleviated as compared with other reporteds in the literature and that the crystal quality of the GaN was only slightly altered. The stress relaxation was attributed to the low-quality diamond used as the temporary carrier during the GaN transfer process. In addition, a thin SiC transition layer in the interface is also beneficial in alleviating the mismatch between the coefficients of thermal expansion for the GaN and the diamond.

materials science, multidisciplinary
High Mobility Algan/Gan Heterostructures Grown on Si Substrates Using A Large Lattice-Mismatch Induced Stress Control Technology

Jianpeng Cheng,Xuelin Yang,Ling Sang,Lei Guo,Anqi Hu,Fujun Xu,Ning Tang,Xinqiang Wang,Bo Shen

DOI: https://doi.org/10.1063/1.4917504

IF: 4

2015-01-01

Applied Physics Letters

Abstract:A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm2/(V·s) at sheet charge density of 8.4 × 1012 cm−2. Strain relaxation and dislocation evolution mechanisms have been investigated. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer. Our results show a great potential for fabrication of low-cost and high performance GaN-on-Si power devices.
Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

C. C. Huang,F. J. Xu,J. Song,Z. Y. Xu,J. M. Wang,R. Zhu,G. Chen,X. Q. Wang,Z. J. Yang,B. Shen,X. S. Chen,W. Lu

DOI: https://doi.org/10.1063/1.3676266

IF: 2.877

2012-01-01

Journal of Applied Physics

Abstract:Strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells (MQWs) grown on GaN/sapphire templates with either AlN/GaN supperlattices (SLs) or low-temperature AlN (LT-AlN) interlayers (ILs) between the MQWs and templates have been investigated. These two IL techniques can both effectively relieve the tensile strain in the MQWs, leading to crack-free surfaces and high crystalline quality. Further analysis shows that there are two distinct strain relief channels. In the case of adopting AlN/GaN SLs IL, microcracks and misfit dislocations account for strain relief in the MQWs. Microcracks are first generated in the IL, followed by activating formation of misfit dislocations. Then, the microcracks are immediately filled up by the subsequent epilayers. Contrastively, strain relief by using LT-AlN IL is mainly through the self relaxation process of the MQWs by surface roughening and strain compensation effect of LT-AlN IL.
Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Zuojian Pan,Zhizhong Chen,Yiyong Chen,Haodong Zhang,Han Yang,Jingxin Nie,Chuhan Deng,Boyan Dong,Daqi Wang,Yuchen Li,Weihua Chen,Fei Jiao,Xiangning Kang,Chuanyu Jia,Zhiwen Liang,Qi Wang,Guoyi Zhang,Bo Shen

2023-08-21

Abstract:Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped nanoscale patterned sapphire substrate (NPSS). The initial growth process of GaN on these two NLs is comparably investigated by a series of growth interruptions. The coalescence process of GaN grains is modulated by adjusting the three-dimensional (3D) temperatures. The results indicate that higher 3D temperatures reduce the edge dislocation density while increasing the residual compressive stress in GaN films. Compared to the LT-GaN NLs, the PVD-AlN NLs effectively resist Ostwald ripening and facilitate the uniform growth of GaN grains on NPSS. Furthermore, GaN films grown on NPSS with PVD-AlN NLs exhibit a reduction of over 50% in both screw and edge dislocation densities compared to those grown on LT-GaN NLs. Additionally, PVD-AlN NLs result in an increase of about 0.5 GPa in the residual compressive stress observed in GaN films.

Materials Science
Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Tiantian Wei,Hui Liao,Shengxiang Jiang,Yue Yang,Hua Zong,Junchao Li,Guo Yu,Peijun Wen,Rui Lang,Xiaodong Hu

DOI: https://doi.org/10.1016/j.spmi.2019.05.029

IF: 3.22

2019-01-01

Superlattices and Microstructures

Abstract:An advanced epitaxial lateral overgrowth (ELOG) structure named "serpentine-channels masked Si(111) substrate" has been introduced, which only has one high-defect region per period compared with the conventional ELOG method. We successfully obtained both coalesced and uncoalesced GaN layers on the substrate simultaneously by the metal-organic chemical vapor deposition (MOCVD) method. The stress states of these two kinds of GaN epilayers were investigated by room-temperature micro-Raman scattering technique. The stress level in the uncoalesced GaN layer was a little lower than that in the coalesced GaN layer. Raman spectra reveal the periodical variations of residual tensile stress in GaN by analyzing E-2 (high) phonon mode. In addition, thermal stress distribution of GaN was simulated by elasticity theory using the finite-element method (FEM). The results of simulation are entirely consistent with the experimental results derived from micro-Raman measurements.
Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

Wei Zhang,Peichi Liu,Biyun Jackson,Tianshu Sun,Shyh-Jer Huang,Hsiao-Chiu Hsu,Yan-Kuin Su,Shoou-Jinn Chang,Lei Li,Ding Li,Lei Wang,XiaoDong Hu,Y. H. Xie

DOI: https://doi.org/10.1063/1.4799600

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:A novel serpentine channel structure is used to mask the sapphire substrate for the epitaxial growth of dislocation-free GaN. Compared to the existing epitaxial lateral overgrowth methods, the main advantages of this novel technique are: (a) one-step epitaxial growth; (b) up to 4 times wider defect-free regions; and (c) the as-grown GaN film can be transferred easily to any type of substrate. TEM, etch pits and cathodoluminescence experiments are conducted to characterize the quality of as-grown GaN. The results show that the average etch-pit density in the yet-to-be-optimized GaN epi-layers is about 4 × 105 cm−2. The underlying physics of selective nucleation and growth is investigated using the finite element method (COMSOL). It is concluded that the proximity effect dominates the selective growth of GaN on the serpentine channel structure masked sapphire. This novel technique is a promising candidate for the growth of high quality III-nitride and the subsequent high-performance device fabrication including high brightness LED, laser diodes, and high-power, high-efficiency transistors.
Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Julien Pernot,Etienne Bustarret,Mariusz Rudzinski,Paul R. Hageman,Poul K. Larsen

DOI: https://doi.org/10.1063/1.2435072

2007-02-21

Abstract:The strain of GaN layers grown by Metal Organic Chemical Vapor Deposition (MOCVD) on three vicinal 4H-SiC substrates (0, 3.4 and 8 offcut from [0001] towards [11-20] axis) is investigated by X-ray Diffraction (XRD), Raman Scattering and Cathodoluminescence (CL). The strain relaxation mechanisms are analyzed for each miscut angle. At a microscopic scale, the GaN layer grown on on-axis substrate has a slight and homogeneous tensile in-plane stress due to a uniform distribution of threading dislocations over the whole surface. The GaN layers grown on miscut substrates presented cracks, separating areas which have a stronger tensile in-plane stress but a more elastic strain. The plastic relaxation mechanisms involved in these layers are attributed to the step flow growth on misoriented surfaces (dislocations and stacking faults) and to the macroscopical plastic release of additional thermoelastic stress upon cooling down (cracks).

Materials Science
Anisotropic Strain Relaxation and High Quality AlGaN/GaN Heterostructures on Si (110) Substrates

Yuxia Feng,Xuelin Yang,Jianpeng Cheng,Jie Zhang,Panfeng Ji,Jianfei Shen,Anqi Hu,Fujun Xu,Tongjun Yu,Xinqiang Wang,Bo Shen

DOI: https://doi.org/10.1063/1.4983386

IF: 4

2017-01-01

Applied Physics Letters

Abstract:We have investigated the growth and relaxation mechanisms of anisotropic lattice misfit strain in AlN and GaN layers on Si (110) substrates. A qualitative model is proposed to explain the relaxation process. It is revealed that the anisotropic misfit strain is quickly relaxed in the low temperature AlN layer by the formation of interface misfit dislocations, small misoriented grains, and lattice distortion. As a result, isotropic properties and atomically smooth surface are observed in the high temperature AlN layer. Based on this isotropic AlN layer, a high quality GaN layer and AlGaN/GaN heterostructures with a high electron mobility of 2160 cm2/(V · s) have been obtained. This work will have important impacts on the understanding of the epitaxy of isotropic semiconductor films on anisotropic substrates.
Effect of Indium-Doped Interlayer on the Strain Relief in GaN Films Grown on Si(111)

Jerry J. Wu,Lifeng Zhao,Guoyi Zhang,Xianglin Liu,Qihe Zhu,Zhanguo Wang,Quanjie Jia,Liping Guo,Tiandou Hu

DOI: https://doi.org/10.1002/pssa.200723162

2008-01-01

Abstract:Crack‐free GaN films have been achieved by inserting an In‐doped low‐temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X‐ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In‐doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire

Yuheng Zhang,Jing Yang,Feng Liang,Zongshun Liu,Yufei Hou,Bing Liu,Fu Zheng,Xuefeng Liu,Degang Zhao

DOI: https://doi.org/10.1088/1361-6641/ad5581

IF: 2.048

2024-06-09

Semiconductor Science and Technology

Abstract:The relationship between stress and dislocation density in MOCVD epitaxial AlN was studied. It has been found that the AlN epitaxial layer generates tensile stress when the crystal islands are merged. By controlling the size and density of crystal islands at the end of 3D growth, the tensile stress generated during epitaxy can be effectively reduced. Mechanical calculations show that there is a linear relationship between the edge thread dislocations density of AlN and the tensile stress during growth. By controlling the stress during AlN growth below 0.1 Gpa, a high-quality AlN sample with an edge thread dislocation density of 6.31×107 cm-2 was obtained.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Direct van der Waals epitaxy of stress-free GaN films on PECVD grown graphene

Hao Zhou,Yu Xu,Xiwen Chen,Yi Liu,Bing Cao,Wan-Jian Yin,Chinhua Wang,Ke Xu

DOI: https://doi.org/10.1016/j.jallcom.2020.155870

IF: 6.2

2020-12-01

Journal of Alloys and Compounds

Abstract:<p>Residual stress is generated in GaN epitaxial layers due to the mismatch during GaN epitaxy on sapphire using the traditional method. Therefore, the use of graphene to reduce residual stress and dislocation densities in GaN epitaxy has become an important research direction. However, growing a stress-free GaN film on graphene substrate remains challenge. In this work, we directly grew graphene on sapphire via plasma enhanced chemical vapor deposition (PECVD) to obtain an epitaxial graphene with characteristic orientation, and ultra-low stress GaN films can then be obtained through metal organic chemical vapor deposition (MOCVD) assisted with the sputtering AlN buffer layer. Through this method, we successfully obtained continuous and flat GaN films with ultra-low biaxial compressive stress (0.023 GPa) without the complicated stress engineering during epitaxial growth. First principle calculation was employed to confirm that the characteristic orientation of epitaxial graphene is crucial to release the stress in GaN. The obtained GaN films can also be easily transferred because of small van der Waals force on graphene. The transferred GaN heterojunction was directly fabricated into a metal-insulator-semiconductor (MIS) device from which typical electrical properties can be obtained. Our work reveals the stress-releasing mechanism and excellent stress-releasing effect of graphene and provides a new epitaxial strategy to guide crystallographic epitaxy.</p>

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis

Hao-Yu Hsieh,Ping-Wei Liou,Shaobo Yang,Wei-Cheng Chen,Li-Ping Liang,Yueh-Chi Lee,Chih-Chung (C. C.) Yang

DOI: https://doi.org/10.3390/nano13101617

IF: 5.3

2023-05-11

Nanomaterials

Abstract:The high porosity of a GaN porous structure (PS) makes it mechanically semi-flexible and can shield against the stress from the thick growth template on an overgrown layer to control the lattice structure or composition within the overgrown layer. To understand this stress shield effect, we investigated the lattice constant variations among different growth layers in various samples of overgrown Al0.3Ga0.7N on GaN templates under different strain-relaxation conditions based on d-spacing crystal lattice analysis. The fabrication of a strain-damping PS in a GaN template shields against the stress from the thick GaN template on the GaN interlayer, which lies between the PS and the overgrown AlGaN layer, such that the stress counteraction of the AlGaN layer against the GaN interlayer can reduce the tensile strain in AlGaN and increase its critical thickness. If the GaN interlayer is thin, such that a strong AlGaN counteraction occurs, the increased critical thickness can become larger than the overgrown AlGaN thickness. In this situation, crack-free, thick AlGaN overgrowth is feasible.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

Moonsang Lee,Dmitry Mikulik,Mino Yang,Sungsoo Park

DOI: https://doi.org/10.1038/s41598-017-08905-y

2017-08-17

Abstract:We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer layers. Micro Raman analysis shows the presence of slight tensile stress in the freestanding GaN crystals and no stress accumulation in HVPE GaN layers during the growth. Additionally, it is demonstrated that the residual tensile stress in HVPE GaN is caused only by elastic stress arising from the crystal quality difference between Ga- and N-face GaN. TEM analysis revealed that the dislocations in freestanding GaN crystals have high inclination angles that are attributed to the stress relaxation of the crystals. We believe that the understanding and characterization on the structural properties of the freestanding GaN crystals will help us to use these crystals for high-performance opto-electronic devices.
Effect of Grain Coalescence on Dislocation and Stress in GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Zuojian Pan,Zhizhong Chen,Yiyong Chen,Haodong Zhang,Han Yang,Ling Hu,Xiangning Kang,Ye Yuan,Chuanyu Jia,Zhiwen Liang,Qi Wang,Guoyi Zhang,Bo Shen

DOI: https://doi.org/10.1039/d3ce00987d

IF: 3.756

2024-01-01

CrystEngComm

Abstract:High-quality GaN films on nanoscale patterned sapphire substrates (NPSSs) are required for micro-light-emitting diode (micro-LED) display. In this study, two types of nucleation layers (NLs), including in situ low-temperature grown GaN (LT-GaN) and ex situ physical vapour deposition AlN (PVD-AlN), are applied on cone-shaped NPSS. The coalescence process of GaN grains on the NPSS is modulated by adjusting the three-dimensional (3D) growth temperatures. Results show that low 3D temperatures help to suppress the Ostwald ripening of GaN grains on the NPSS, facilitating the uniform distribution of 3D GaN grains. Higher 3D temperatures lead to a decrease in the edge dislocation density, accompanied by an increase in residual compressive stress. Compared with LT-GaN NLs, PVD-AlN NLs can effectively improve the growth uniformity, suppress the tilting and twisting of GaN grains grown on NPSSs, and promote the orientation consistency of crystal facets during coalescence. The GaN films grown on NPSSs with PVD-AlN NLs exhibit a decrease in the coalescence time from 2000 s to 500 s, a reduction in dislocation densities from 2.8 x 108 cm-2 to 1.4 x 108 cm-2, and an increase in the residual compressive stress from 0.98 GPa to 1.41 GPa compared to those grown on LT-GaN NLs. This study elucidates trends in dislocation and stress evolution in GaN films on NPSSs with analysis of grain coalescence. The effect of grain coalescence on the dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates with low-temperature grown GaN and physical vapour deposition AlN nucleation layers is comparably investigated.
Ultralow-Supersaturation Al Pretreatment Toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Zidong Cai,Xuelin Yang,Cheng Ma,Zhenghao Chen,Danshuo Liu,Liwen Sang,Fujun Xu,Xinqiang Wang,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1021/acsaelm.2c00747

IF: 4.494

2022-01-01

ACS Applied Electronic Materials

Abstract:An ultralow-supersaturation Al pretreatment approach has been proposed to achieve low threading dislocation (TD) density and low radio frequency (RF) loss GaN/AlN layer stacks on Si substrates. By employing this approach, the Al-Si liquid alloy is eliminated, and a sharp AlN/Si interface is obtained. In addition, the size of the AlN nucleation islands is enlarged and thus the TDs generated from the coalescence of the islands are reduced even at a low growth temperature. Owing to the low TD density AlN layer, a 1.5 mu m crack-free GaN layer can be achieved directly on this AlN layer and no transition layers are required. The full width at half maximum values are as low as 390 and 440 arcsec for the GaN (002) and (102) diffractions, respectively. Owing to a low growth temperature and short growth time, the RF loss of the epi-stack is as low as 0.29 dB/mm at 10 GHz. This work shows great potential for the fabrication of high-quality and low-loss GaN-on-Si RF devices.
Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Jie Zhang,Xuelin Yang,Hongping Ma,Qingchun Zhang,Bo Shen

DOI: https://doi.org/10.1063/5.0126796

IF: 1.697

2023-01-01

AIP Advances

Abstract:We present how the interaction between Al dopants and threading dislocations affects dislocation inclinations and then plays an important role in controlling residual strain in GaN-on-Si epitaxial films. When the Al concentration in the GaN epitaxial film is increased to 0.85%, the dislocations extend almost in the growth direction, contributing to a strain-free epitaxial film. We suggest that the Al atoms could substitute for Ga vacancies at the dislocation cores on the growth surface and then inhibit the dislocation inclinations. The suppressed dislocation inclinations lead to a reduced relaxation of compressive strain. The results pave a new way to control dislocation movements and strain in GaN epitaxial films on Si substrates.

Stress Control and Dislocation Reduction in the Initial Growth of GaN on Si (111) Substrates by Using a Thin GaN Transition Layer

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Coordinated Stress Management and Dislocation Control in GaN Growth on Si (111) Substrates by Using a Carbon Nanotube Mask.

Epitaxial Growth of GaN-based Heterostructures of High Quality on Si Substrates Using a Large Lattice-Mismatch Induced Stress Control Technology

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition

High Mobility Algan/Gan Heterostructures Grown on Si Substrates Using A Large Lattice-Mismatch Induced Stress Control Technology

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Anisotropic Strain Relaxation and High Quality AlGaN/GaN Heterostructures on Si (110) Substrates

Effect of Indium-Doped Interlayer on the Strain Relief in GaN Films Grown on Si(111)

Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire

Direct van der Waals epitaxy of stress-free GaN films on PECVD grown graphene

Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

Effect of Grain Coalescence on Dislocation and Stress in GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Ultralow-Supersaturation Al Pretreatment Toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates