Abstract:The processing of N-polar GaN (0001 ¯) samples has been studied, motivated by applications in which extensive back side thinning of freestanding GaN (FS-GaN) substrates is required. Experiments were conducted on FS-GaN from two commercial sources, in addition to epitaxial GaN with the N-face exposed by a laser lift-off process. The different types of samples produced equivalent results. Surface morphologies were examined over relatively large areas, using scanning electron microscopy and stylus profiling. The main focus of this study was on inductively coupled plasma (ICP) etch processes, employing Cl2∕Ar or Cl2∕BCl3Ar gas mixtures. Application of a standard etch recipe, optimized for feature etching of Ga-polar GaN (0001) surfaces, caused severe roughening of N-polar samples and confirmed the necessity for specific optimization of etch conditions for N-face material. A series of recipes with a reduced physical (sputter-based) contribution to etching allowed average surface roughness values to be consistently reduced to below 3nm. Maximum N-face etch rates of 370–390nm∕min have been obtained in recipes examined to date. These are typically faster than etch rates obtained on Ga-face samples under the same conditions and adequate for the process flows of interest. Mechanistic aspects of the ICP etch process and possible factors contributing to residual surface roughness are discussed. This study also included work on chemomechanical polishing (CMP). The optimized CMP process had stock removal rates of ∼500nm∕h on the GaN N face. This was much slower than the ICP etching but showed the important capability of recovering smooth surfaces on samples roughened in previous processing. In one example, a surface roughened by nonoptimized ICP etching was smoothed to give an average surface roughness of ∼2nm.

Ultradeep electron cyclotron resonance plasma etching of GaN

Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN

ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

Development of Micron Sized Photonic Devices Based on Deep GaN Etching

Nonselective etching of GaN/AlGaN heterostructures by Cl 2 /Ar/BCl 3 inductively coupled plasmas

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (\({11\overline{2}2}\)) and Non-Polar (\({11\overline{2}0}\)) GaN Nanorods

Thinning of N-face GaN (0001 ¯) Samples by Inductively Coupled Plasma Etching and Chemomechanical Polishing

Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N

Enhanced Wet Etching of Patterned GaN with Ion Implantation

Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching

High Etch Rate and Smooth Morphology Using a Novel Chemistry in Reactive Ion Etching of GaN

Electrochemical etching of highly conductive GaN single crystals

Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

Dry Etching of Germanium with Laser Induced Reactive Micro Plasma

Dry Etching Characteristics of Algan/Gan Heterostructures Using Inductively Coupled H-2/Cl-2, Ar/Cl-2 and Bcl3/Cl-2 Plasmas

A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications