Abstract:The dry etching characteristics of the TaN/HfO2 gate stack structure using Cl2/Ar, Cl2/SF6/Ar and Cl2/SF6/O2/Ar inductively coupled plasmas (ICPs) were investigated and the etch rates of the TaN and HfO2 layers and TaN/HfO2 etch rate selectivities were compared. The results obtained for the TaN/HfO2 etching by varying the Cl2/Ar gas mixing ratio, the top ICP electrode power, and the dc self-bias voltage (Vdc) in the Cl2/Ar plasmas showed that low etch selectivities were obtained, due to the high HfO2 etch rate. The effects of adding SF6 to the Cl2/Ar plasmas and adding O2 flow to the SF6/Cl2/Ar chemistry were investigated for the purpose of improving the etch selectivity. Etch experiments performed by varying the Cl2/SF6/Ar gas mixing ratio and Vdc value in SF6/Cl2/Ar plasmas, combined with X-ray photoelectron spectroscopy measurements, showed that the etch rates were reduced compared to those in Cl2/Ar chemistry, due to the heavy fluorination of the surface, however the etch selectivity was increased, due to a disproportionate decrease in the TaN and HfO2 etch rates. The addition of O2 flow to the SF6/Cl2/Ar plasma also increased the etch selectivity at an O2 flow rate of 5 sccm, due to the TaN etch rate being increased, while the HfO2 etch rate remained almost constant.

Nonselective Etching of GaN/AlGaN Heterostructures by Cl2/Ar/BCl3 Inductively Coupled Plasmas

Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

Dry Etching Characteristics of Algan/Gan Heterostructures Using Inductively Coupled H-2/Cl-2, Ar/Cl-2 and Bcl3/Cl-2 Plasmas

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma

Smooth Etching of Epitaxially Grown AlN Film by Cl2/BCl3/Ar-based Inductively Coupled Plasma

Characteristics of GaN Thin Films by Inductively Coupled Plasma Etching with Cl2/BCl3 and Cl2/Ar

Characteristics of N-Gan after Cl-2/Ar and Cl-2/N-2 Inductively Coupled Plasma Etching

Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN

The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

Threshold Ion Energies and Cleaning of Etch Residues During Inductively Coupled Etching of NiO/Ga2O3 in BCl3

Effect of annealing on the surface characteristics of GaN-LED with AlGaN cladding after ICP dry etching

Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer

Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N

Smooth etching of sapphire wafers using BCl3 inductively coupled plasmas

High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application

Dry Etching of TaN/HfO2 Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma