Abstract:Anisotropic pattern transfer with low damage in compound semiconductor dry etching requires an in depth understanding of the chemical processes that occur at the plasma/semiconductor interface that promote the removal of volatile product species. In situ mass spectrometry has been used to study product evolution during high density plasma etching of GaAs in a Cl2/Ar chemistry. Through definitive surface temperature control and configuration of the mass spectrometer to sample through the substrate platen, a comprehensive picture of the etch process was obtained. Evolution of etch products of GaAs (AsClx and GaClx) was monitored as neutral flux (pressure), ion flux (microwave power) and ion energy (substrate bias) are varied to identify conditions where ion-driven surface chemistry is dominant. Observations show that fluxes of atomic chlorine neutrals and ions are required at the substrate to maximize etch product formation. These conditions are optimally met at low microwave powers (⩽300 W) and pressures (⩽1.0 mTorr) in our system. The ion energy dependence of product formation shows regions of thermal/chemical etching for energies less than 50 eV, ion-assisted chemical etching for energies between 50 and 200 eV, and sputtering for energies greater than 200 eV. Ideal processing conditions are ascertained from the trade off between maximum ion-assisted etch rate and minimal electronic damage, as measured by photoreflectance spectrometry. The effectiveness of post-etch chlorine treatments on returning of the surface Fermi level to its pre-etched value was also investigated.

ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN

Nonselective Etching of GaN/AlGaN Heterostructures by Cl2/Ar/BCl3 Inductively Coupled Plasmas

Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

Characteristics of GaN Thin Films by Inductively Coupled Plasma Etching with Cl2/BCl3 and Cl2/Ar

Smooth Etching of Epitaxially Grown AlN Film by Cl2/BCl3/Ar-based Inductively Coupled Plasma

Ultradeep electron cyclotron resonance plasma etching of GaN

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Characteristics of N-Gan after Cl-2/Ar and Cl-2/N-2 Inductively Coupled Plasma Etching

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Plasma etching of III-V semiconductors and mechanism of crystalline damage

Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (\({11\overline{2}2}\)) and Non-Polar (\({11\overline{2}0}\)) GaN Nanorods

The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma

Threshold Ion Energies and Cleaning of Etch Residues During Inductively Coupled Etching of NiO/Ga2O3 in BCl3

Dry Etching Characteristics of Algan/Gan Heterostructures Using Inductively Coupled H-2/Cl-2, Ar/Cl-2 and Bcl3/Cl-2 Plasmas

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF$_6$ plasma and Al(CH$_3$)$_3$

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

Plasma etching ofⅢ-Ⅴsemiconductors and mechanism of crystalline damage

Vertical and Smooth, Etching of Inp by Cl-2/Ch4/Ar Inductively Coupled Plasma at Room Temperature

Surface chemistry and damage in the high density plasma etching of gallium arsenide