Abstract:Inductively Coupled Plasma (ICP) can achieve high density plasma in low pressure, so it has a number of significant advantages such as improved etching rates, better profile control, improved uniformity, greatly increased selectivity and a dramatic reduction in radiation damage and contamination. In optics, quartz is an ideal optical material with transmitting spectral range from deep ultraviolet to far infrared. So we systematically studied the etching characteristics of quartz by using a Inductively Coupled Plasma (ICP) etching system. In the experiments, the gas was the mixture of CHF3, O-2 and Ar, and the chamber pressure was about 10 mTorr. The influences of gas flow rate and the power of the radio frequency on etching rate were optimized. The uniformity and repeatability of the etching technology were also studied. After residue mask material was removed by wet chemical solution, no polymer was observed on the surfaces of samples, and the surfaces of the fabricated quartz elements were smooth and clean. The optimized etching process is important for the fabrication of micro-optical elements based on quartz. Using this etching process, many gratings such as Dammann grating, rectangular groove grating, and optical disk grating can be fabricated successfully.

Vertical and Smooth, Etching of Inp by Cl-2/Ch4/Ar Inductively Coupled Plasma at Room Temperature

NOVEL ETCHING TECHNOLOGY OF INP BY INDUCTIVELY COUPLED PLASMA1

Study and Optimization of Room Temperature Inductively Coupled Plasma Etching of Inp Using Cl-2/Ch4/H-2 and Ch4/H-2

Room temperature inductively coupled plasma etching of InP-based semiconductors using Cl2/N2 and Cl2/N 2/Ar mixtures

Room temperature inductively coupled plasma etching of InAs/InSb in BCl3/Cl2/Ar

Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Inductively Coupled Plasma-Reactive Ion Etching Of Insb Using Ch4/H-2/Ar Plasma

Inductively coupled plasma-reactive ion etching of InSb using CH[sub 4]∕H[sub 2]∕Ar plasma

Deep InP gratings for opto-electronic devices etched by Cl 2/CH 4/Ar inductively coupled plasma

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Smooth etching of sapphire wafers using BCl3 inductively coupled plasmas

Room Temperature Dry Etching of INP-Based Semiconductors for Optoelectronic Device Fabrication Using Inductively Coupled Plasma

The study and optimization of ICP deep etching at a low-temperature for InP solid-immersion metalens fabrication

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

Deep groove etching for partial reflectors in InP-based monolithically integrated photonic devices

Inductively Coupled Plasma Etching of Gaas in Cl-2/Ar, Cl-2/Ar/O-2 Chemistries with Photoresist Mask

Deep InP Gratings for Opto-Electronic Devices Etched by Cl <sub>2</sub> /CH <sub>4</sub> /Ar Inductively Coupled Plasma

Etching Quartz with Inductively Coupled Plasma Etching Equipment

Near IR laser-induced chemical etching on the InP (100) surface