The study and optimization of ICP deep etching at a low-temperature for InP solid-immersion metalens fabrication
Yicheng Zhu,Wenjuan Wang,Min Zhou,Huidan Qu,Guanhai Li,Pingping Chen,Wei Lu
DOI: https://doi.org/10.1016/j.mssp.2023.107700
IF: 4.1
2023-11-01
Materials Science in Semiconductor Processing
Abstract:In this work, we studied and optimized the Inductively Coupled Plasma (ICP) etching process for fabricating InP high aspect ratio structures at a relatively low temperature (60 °C) using the Cl2/CH4/H2 gas mixture. The balance between the deposition and discharge of the sediment, as well as the balance between two main etchants, Cl2 and CH4 fluxes, were investigated in this deep etching process. We increased the ability to fabricate high aspect ratio trenches of the etching process and effectively reduced the local bowing phenomenon. The optimized process successfully produced InP trenches with a linewidth of 100 nm with smooth sidewalls, achieving an aspect ratio above 10:1. In the end, we fabricated an InP solid-immersion metalens, which will be monolithically integrated with the InGaAs/InP photodetectors in the future. The great structure morphology with high anisotropy and the improved performance of the metalens exhibit the effectiveness of our etching process optimization. This work may be instructive to the development of InP-based optoelectronic devices, especially for developing metalenses integrated on InGaAs/InP photodetectors. It can also provide valuable insights for the development of deep etching processes with low volatility by-products.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied