Room temperature inductively coupled plasma etching of InP-based semiconductors using Cl2/N2 and Cl2/N 2/Ar mixtures

Qiwei Zhou,Changzheng Sun,Jian Wang,Bing Xiong,Yi Luo

DOI: https://doi.org/10.1109/INOW.2007.4302950

2007-01-01

Abstract:Room temperature etching of InP is carried out using Cl2/N 2 and Cl2/N2/Ar inductively coupled plasma (ICP). The surface roughness and anisotropy obtained with different etching conditions are presented. © 2007 IEEE.

What problem does this paper attempt to address?

Vertical and Smooth, Etching of Inp by Cl-2/Ch4/Ar Inductively Coupled Plasma at Room Temperature

CZ Sun,JB Zhou,B Xiong,J Wang,Y Luo

DOI: https://doi.org/10.1088/0256-307x/20/8/338

2003-01-01

Chinese Physics Letters

Abstract:We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using Cl-2/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between Cl-2 and CH4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters, vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855 nm/min, and the selectivity ratio over SiO2 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75nm depth into the surface.
Room Temperature Dry Etching of INP-Based Semiconductors for Optoelectronic Device Fabrication Using Inductively Coupled Plasma

Changzheng Sun,Jian Wang,Qiwei Zhou,Bing Xiong,Yi Luo

DOI: https://doi.org/10.1109/iciprm.2007.381165

2007-01-01

Abstract:Dry etching of InP-based semiconductors is carried out by inductively coupled plasma (ICP) for optoelectronic device fabrication. The etching conditions for different chemical mixtures are optimized to ensure high anisotropy and smooth surface morphology.
NOVEL ETCHING TECHNOLOGY OF INP BY INDUCTIVELY COUPLED PLASMA1

Chang-Zheng Sun,Jin-Bo Zhou,Bing Xiong,Yi Luo

2000-01-01

Abstract:We report on the room temperature dry etching of InP by inductively coupled plasma (ICP) using Cl2/CH4/Ar mixtures. Under optimized conditions, vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.274 nm. To our knowledge, this is the best result for InP to date.
Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma

ZB Hao,S Han,F Ren,B Xiong,CZ Sun,Y Luo

DOI: https://doi.org/10.1143/jjap.43.8304

IF: 1.5

2004-01-01

Japanese Journal of Applied Physics

Abstract:The inductively coupled plasma (ICP) etching of a GaAs/GaInP/AlGaInP heterostructure is studied using various gas mixtures. It is found that gas chemistry has a significant influence on the etch profile of the heterostructure, which is crucial for the fabrication of ridge/rib structures on AlGaInP-based materials. The self-masking effects of both aluminum oxide and InClx cause rough etched surfaces and sidewalls. Using Cl2/BCl3/CH4 chemistry, the smooth and vertical etching of a GaAs/GaInP/AlGaInP heterostructure has been realized at a moderate etch rate.
Deep InP gratings for opto-electronic devices etched by Cl 2/CH 4/Ar inductively coupled plasma

Jian Wang,Tian Jian-Bai,Bing Xiong,Sun Chang-Zheng,Hao Zhi-Biao,Yi Luo

DOI: https://doi.org/10.1088/0256-307X/23/8/054

2006-01-01

Chinese Physics Letters

Abstract:Deep InP gratings are etched by Cl 2/CH 4/Ar inductively coupled plasma (ICP) at room temperature. A comparison is made between SiN x mask patterns formed by wet and dry etching. SF 6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of Cl 2/CH 4/Ar ICP are optimized for high anisotropy, and a 1.7-μm-deep InP grating with an aspect ratio of 10:1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback AlGaInAs-InP laser. © 2006 Chinese Physical Society and IOP Publishing Ltd.
REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Jie Ge,Xuan Liu,Yi Yang,Yixu Song,Tianling Ren

DOI: https://doi.org/10.1142/s0218625x14500383

2014-01-01

Surface Review and Letters

Abstract:As the key feature size keeps shrinking down, inductively coupled plasma (ICP) has been widely used for etching. In this study, a commercial ICP etcher filled with Cl 2/ Ar mixture was simulated. The simulation was based on a commercial software CFD-ACE+, which is a multi-module solver. For the simulation part, CFD-ACE module was used for reactor scale and CFD-TOPO module was used for feature scale simulation. We have reached a reasonable agreement between the simulative and experimental results. Specifically, the different causes of sidewall bowing and microtrenching were discussed. We also analyzed the causes of special profile as trench width scaling down. Moreover, the agreement validates correctness of the chemistry mechanism, so it can be used as guidance for the process designing and manufacturing equipment improvement.
Characteristics of Gan Thin Films by Inductively Coupled Plasma Etching with Cl-2/Bcl3 and Cl-2/Ar

X. M. Hua

DOI: https://doi.org/10.1007/s10854-011-0577-5

2011-01-01

Journal of Materials Science Materials in Electronics

Abstract:GaN thin films were etched by inductively coupled plasma (ICP). The effects of BCl3 and Ar with different Cl-2 fraction are studied and compared. The ICP power and RF power are also altered to investigate the different effects by using Cl-2/BCl3 or Cl-2/Ar as etching gases. The etch rate and surface morphology of the etched surface are characterized by using surface profiler, scanning electron microscopy and atomic force microscopy. The root-mean-square roughness values are systematically compared. It is found that the etch rates of Cl-2/Ar are higher than that of the Cl-2/BCl3 in the Cl-2 fraction ranging from 10 to 90%. When the ICP power is increased, the RMS roughness of GaN surface after ICP etching shows reverse trend between Cl-2/BCl3 and Cl-2/Ar gas mixture. The results indicate quite different features using Cl-2/BCl3 and Cl-2/Ar for GaN ICP etcing under the same conditions.
Inductively coupled plasma-reactive ion etching of InSb using CH[sub 4]∕H[sub 2]∕Ar plasma

Guo-Dong Zhang,Wei-Guo Sun,Shu-Li Xu,Hong-Yan Zhao,Hong-Yi Su,Hai-Zhen Wang

DOI: https://doi.org/10.1116/1.3143664

2009-01-01

Abstract:InSb is an important material for optoelectronic devices. Most InSb devices are currently wet etched, and the etching geometries are limited due to the isotropic nature of wet etching. Inductively coupled plasma (ICP)-reactive ion etching (RIE) is a more desirable alternative because it offers a means of producing small anisotropic structures especially needed in large format infrared focal plane arrays. This work describes the novel use of ICP-RIE for fabricating InSb mesas with CH4/H-2/Ar plasma and presents the influences of the process parameters on the etch rate and surface morphology. The parameters investigated include bias radio frequency power (50-250 W), % CH4 in H-2 (10-50), argon (Ar) partial pressure (0-0.3 Pa with total pressure of 1.0 Pa), and total pressure (0.35-4 Pa). With the process parameters optimized in this investigated ranges, good etching results have been achieved with etch rates up to 80 nm/min, and etch features with sidewall angles of about 80 degrees, the etched surface is as smooth as before the RIE process.
Isotropic Etch for SiO2 Microcantilever Release with ICP System

Qi Chen,Ji Fang,Hai-Feng Ji,Kody Varahramyan

DOI: https://doi.org/10.1016/j.mee.2007.09.004

IF: 2.3

2007-01-01

Microelectronic Engineering

Abstract:Inductively coupled plasma (ICP) system has been widely used for anisotropic silicon etching because it offers high aspect ratio with a vertical side wall. The isotropic etching capability of the ICP system, however, has not gained much attention, even though it possesses advantages in profile control and high etching rate over wet isotropic etching or conventional RIE (reactive ion etching). We report here an isotropic dry etching process to release microcantilever beams. Investigations have covered chamber pressure, plasma source power, substrate power, SF6 (sulfur hexafluoride) flow rate relating to Si etching rate, undercutting rate, and isotropic ratio. The SiO2 (silicon dioxide) cantilevers were successfully released from the Si substrate and the optimized silicon etching rate was 9.1μm per minute. The etching profiles were analyzed by scanning electron micrographs (SEM).
Inductively Coupled Plasma-Reactive Ion Etching Of Insb Using Ch4/H-2/Ar Plasma

Guo-Dong Zhang,Wei-Guo Sun,Shu-Li Xu,Hong-Yan Zhao,Hong-Yi Su,Hai-Zhen Wang

DOI: https://doi.org/10.1116/1.3143664

2009-01-01

Abstract:InSb is an important material for optoelectronic devices. Most InSb devices are currently wet etched, and the etching geometries are limited due to the isotropic nature of wet etching. Inductively coupled plasma (ICP)-reactive ion etching (RIE) is a more desirable alternative because it offers a means of producing small anisotropic structures especially needed in large format infrared focal plane arrays. This work describes the novel use of ICP-RIE for fabricating InSb mesas with CH4/H-2/Ar plasma and presents the influences of the process parameters on the etch rate and surface morphology. The parameters investigated include bias radio frequency power (50-250 W), % CH4 in H-2 (10-50), argon (Ar) partial pressure (0-0.3 Pa with total pressure of 1.0 Pa), and total pressure (0.35-4 Pa). With the process parameters optimized in this investigated ranges, good etching results have been achieved with etch rates up to 80 nm/min, and etch features with sidewall angles of about 80 degrees, the etched surface is as smooth as before the RIE process.
Nonselective etching of GaN/AlGaN heterostructures by Cl 2 /Ar/BCl 3 inductively coupled plasmas

Tong Wu

DOI: https://doi.org/10.1360/03ye0256

2004-01-01

Abstract:A systematic study of the nonselective and smooth etching of GaN/AlGaN heterostructures was performed using Cl 2 /Ar/BCl 3 inductively coupled plasmas (ICP). Nonselective etching can be realized by adjusting the BCl 3 ratio in the Cl 2 /Ar/BCl 3 mixture (20%–60%), increasing the ICP power and dc bias, and decreasing the chamber pressure. Surface morphology of the etched heterostructures strongly depends on the gas chemistry and the chamber pressure. Specifically, with the addition of 20% BCl 3 to Cl 2 /Ar (4∶1) gas mixture, nonselective etching of GaN/Al 0.28 Ga 0.72 N heterostructures at high etch rate is maintained and the surface root-mean-square (rms) roughness is reduced from 10.622 to 0.495 nm, which is smoother than the as-grown sample. Auger electron spectroscopy (AES) analysis shows that the effective removal of residual oxygen from the surface of AlGaN during the etching process is crucial to the nonselective and smooth etching of GaN/AlGaN herterostructures at high etch rate.
Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

Zhang Wendong,Wang Yong,Tong Zhaomin,Zhang Bin-zhen,Zhang Xiongwen,Xue Chenyang

2008-06-05

Abstract:Selective dry etching of GaAs/AlAs with SiCl4/SF6 mixtures by inductively coupled plasma (ICP) is reported.With different SiCl4/SF6 ratios,chamber pressure,and RF chuck power,the average etch rates of GaAs,AlAs,and their selectivity are studied.Proper gases ratios of SiCl4/SF6(15/5sccm),lower RF chuck power,and higher chamber pressure enhance the formation of AlF3 nonviolent produce and encourage to the selectivity of GaAs/AlAs.When the gases ratios of SiCl4/SF6 are at 15/5sccm,RF chuck power is 10W,source power is 500W,and chamber pressure is 2Pa,the selectivity of GaAs/AlAs reaches at least 1500.The plasma damage of etched GaAs substrate is conducted by Raman spectroscope under different RF chuck power and chamber pressure,atomic force microscope (AFM),and scanning electron microscope (SEM) also have been applied to view the surface morphology and sidewall,respectively.

Engineering,Materials Science,Physics
Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

Yanjun Han,Song Xue,Tong Wu,Zhen Wu,Wenping Guo,Yi Luo,Zhibiao Hao,Changzheng Sun

2004-01-01

Abstract:A systematic study of the nonselective and smooth etching of GaN/AlGaN heterostructures was performed using Cl2/Ar/BCl3 inductively coupled plasmas (ICPs). Nonselective etching can be realized by adjusting the BCl3 ratio in the Cl2/Ar/BCl3 mixture (20%–60%), increasing the ICP power, and decreasing the chamber pressure. Surface morphology of the etched heterostructures strongly depends on the gas chemistry and the chamber pressure, whereas selectivity and surface morphology show a slight dependence on the dc bias and total flow rate. Specifically, with the addition of 20% BCl3 to Cl2/Ar (4:1) gas mixture, nonselective etching of GaN/Al0.28Ga0.72N heterostructures at a high etch rate is maintained and the surface root-mean-square roughness is reduced from 10.6 nm to 0.5 nm, which is smoother than the as-grown sample. Auger electron spectroscopy analysis shows that the effective removal of …
Characteristics of N-Gan after Cl-2/Ar and Cl-2/N-2 Inductively Coupled Plasma Etching

YJ Han,S Xue,WP Guo,CZ Sun,ZB Hao,Y Luo

DOI: https://doi.org/10.1143/jjap.42.6409

2003-01-01

Abstract:A systematic study on the effect of inductively coupled plasma (ICP) etching on n-type GaN is presented. The optical and electrical properties and surface stoichiometry of n-type GaN are evaluated using room-temperature photoluminescence (PL) and current–voltage (I–V) characteristic measurements, and X-ray photoelectron spectroscopy (XPS), respectively. Investigation of the effect of additive gas (N2 and Ar) and RF power on these characteristics has also been carried out. It is shown that the decrease in the O/Ga ratio after ICP etching can suppress the deterioration of the near-band-edge emission intensity. Furthermore, N vacancy (VN) with a shallow donor nature and Ga vacancy (VGa) with a deep acceptor nature are generated after ICP etching upon the addition of Ar and N2 to Cl2 plasma, respectively. Lower ohmic contact resistance could be obtained when VN or ion-bombardment-induced defect is dominant at the surface. Improved etching conditions have been obtained based on these results.
Deep InP Gratings for Opto-Electronic Devices Etched by Cl <sub>2</sub> /CH <sub>4</sub> /Ar Inductively Coupled Plasma

Wang Jian,Tian Jian-Bai,Xiong Bing,Sun Chang-Zheng,Hao Zhi-Biao,Luo Yi

DOI: https://doi.org/10.1088/0256-307x/23/8/054

2006-01-01

Chinese Physics Letters

Abstract:Deep InP gratings are etched by Cl2/CH4/Ar inductively coupled plasma (ICP) at room temperature. A comparison is made between SiNx mask patterns formed by wet and dry etching. SF6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of Cl2/CH4/Ar ICP are optimized for high anisotropy, and a 1.7-μm-deep InP grating with an aspect ratio of 10:1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback AlGaInAs-InP laser.
Near IR laser-induced chemical etching on the InP (100) surface

Qizong Qin,Kangzhan Zhang

1995-01-01

Abstract:The laser induced chemical etching of the InP (100) surface with a chlorine molecular beam was investigated by using a Nd:YAG laser of 1064nm in wavelength. The mass and velocity distributions of the reaction products at different surface temperatures (290K and 560K) were determined by the time-resolved mass spectrometry. Both the laser fluence and the normal component of the incident Cl 2 molecules' translational energy enhance the etching reaction of the InP(100) surface. Besides, a chemical reaction mechanism was proposed here which suggests that the rate-dominant-step might be the laser-induced thermal desorption of the adsorbed surface reaction products (but when the laser energy density is very high, the laser induced evaporation might play an important role, and this will be reported in another paper).
Dry Etching Characteristics of Algan/Gan Heterostructures Using Inductively Coupled H-2/Cl-2, Ar/Cl-2 and Bcl3/Cl-2 Plasmas

T Wu,ZB Hao,G Tang,Y Luo

DOI: https://doi.org/10.1143/jjap.42.l257

2003-01-01

Abstract:In this paper, the etching properties of AlGaN/GaN heterostructures were studied by using inductively coupled H-2/Cl-2, Ar/Cl-2 and BCl3/Cl-2 plasmas. Atomic force microscope (AFM) measurement showed that distinct surface morphology were obtained using different gas chemistries. Ultra-smooth etched surface with the root-mean-square roughness of 0.851 nm has been achieved using BCl3/Cl-2 chemistry, which is the best result for the etching of AlGaN/GaN heterostructure using inductively coupled plasma (ICP) to our knowledge. Surface analysis was then performed to understand the etching characteristics by Auger electron spectroscopy (AES). We find that the effective removal of oxygen from the etched surface of AlGaN layer during the etching process was a crucial factor in enhancing the surface morphology of the etched samples.
Argon Plasma Induced Quantum Well Intermixing Technology

PENG Sheng-hua,ZHANG Xin,HE Jian-jun

DOI: https://doi.org/10.3785/j.issn.1008-973x.2011.06.016

2011-01-01

Abstract:Argon plasma induced quantum well intermixing was investigated for an InGaAsP/InP multi-quantum well structure.When the radio frequency(RF) power was fixed at 480 W,inductively coupled plasma(ICP) power at 500 W and ICP treatment time at 1 min,the etching depth of the quantum well samples was less than 500 nm,and the defects induced by the ICP were confined in the sacrificial layer.The samples were then annealed in nitrogen atmosphere for 2 min at different temperatures,and the defects diffused to the quantum well layers to induce quantum well intermixing.The photoluminescence(PL) of experimental samples showed that with the increasing ICP power and annealing temperature,the blue-shift of the PL peaks of the quantum well samples increased and this trend saturated when the ICP power reached 500 W with the annealing temperature at 750 ℃.Under this condition,the blue shift of PL peak as large as 110 nm was obtained and the PL intensity was 55% of the as-grown sample,which indicates the intermixed quantum well samples are still in good crystal lattice quality.
ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

C. B. Vartuli,S. J. Pearton,J. W. Lee,J. Hong,J. D. MacKenzie,C. R. Abernathy,R. J. Shul

DOI: https://doi.org/10.1063/1.117603

IF: 4

1996-09-02

Applied Physics Letters

Abstract:Electron cyclotron resonance plasma etch rates for GaN, InN, InAlN, AlN, and InGaN were measured for a new plasma chemistry, ICl/Ar. The effects of gas chemistry, microwave and rf power on the etch rates for these materials were examined. InN proved to be the most sensitive to the plasma composition and ion density. The GaN, InN, and InGaN etch rates reached ∼13 000, 11 500, and ∼7000 Å/min, respectively, at 250 W rf (−275 V dc) and 1000 W microwave power. The etched surface of GaN was found to be smooth, with no significant preferential loss of N from the surface at low rf powers, and no significant residue on the surface after etching.

physics, applied
The study and optimization of ICP deep etching at a low-temperature for InP solid-immersion metalens fabrication

Yicheng Zhu,Wenjuan Wang,Min Zhou,Huidan Qu,Guanhai Li,Pingping Chen,Wei Lu

DOI: https://doi.org/10.1016/j.mssp.2023.107700

IF: 4.1

2023-11-01

Materials Science in Semiconductor Processing

Abstract:In this work, we studied and optimized the Inductively Coupled Plasma (ICP) etching process for fabricating InP high aspect ratio structures at a relatively low temperature (60 °C) using the Cl2/CH4/H2 gas mixture. The balance between the deposition and discharge of the sediment, as well as the balance between two main etchants, Cl2 and CH4 fluxes, were investigated in this deep etching process. We increased the ability to fabricate high aspect ratio trenches of the etching process and effectively reduced the local bowing phenomenon. The optimized process successfully produced InP trenches with a linewidth of 100 nm with smooth sidewalls, achieving an aspect ratio above 10:1. In the end, we fabricated an InP solid-immersion metalens, which will be monolithically integrated with the InGaAs/InP photodetectors in the future. The great structure morphology with high anisotropy and the improved performance of the metalens exhibit the effectiveness of our etching process optimization. This work may be instructive to the development of InP-based optoelectronic devices, especially for developing metalenses integrated on InGaAs/InP photodetectors. It can also provide valuable insights for the development of deep etching processes with low volatility by-products.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied

Room temperature inductively coupled plasma etching of InP-based semiconductors using Cl2/N2 and Cl2/N 2/Ar mixtures

Vertical and Smooth, Etching of Inp by Cl-2/Ch4/Ar Inductively Coupled Plasma at Room Temperature

Room Temperature Dry Etching of INP-Based Semiconductors for Optoelectronic Device Fabrication Using Inductively Coupled Plasma

NOVEL ETCHING TECHNOLOGY OF INP BY INDUCTIVELY COUPLED PLASMA1

Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma

Deep InP gratings for opto-electronic devices etched by Cl 2/CH 4/Ar inductively coupled plasma

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Characteristics of Gan Thin Films by Inductively Coupled Plasma Etching with Cl-2/Bcl3 and Cl-2/Ar

Inductively coupled plasma-reactive ion etching of InSb using CH[sub 4]∕H[sub 2]∕Ar plasma

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Inductively Coupled Plasma-Reactive Ion Etching Of Insb Using Ch4/H-2/Ar Plasma

Nonselective etching of GaN/AlGaN heterostructures by Cl 2 /Ar/BCl 3 inductively coupled plasmas

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

Characteristics of N-Gan after Cl-2/Ar and Cl-2/N-2 Inductively Coupled Plasma Etching

Deep InP Gratings for Opto-Electronic Devices Etched by Cl <sub>2</sub> /CH <sub>4</sub> /Ar Inductively Coupled Plasma

Near IR laser-induced chemical etching on the InP (100) surface

Dry Etching Characteristics of Algan/Gan Heterostructures Using Inductively Coupled H-2/Cl-2, Ar/Cl-2 and Bcl3/Cl-2 Plasmas

Argon Plasma Induced Quantum Well Intermixing Technology

ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

The study and optimization of ICP deep etching at a low-temperature for InP solid-immersion metalens fabrication