Abstract:SiC is commonly used in the field of high temperature, high frequency, high power and radiation-resistant semiconductor devices and ultraviolet photodetectors due to its excellent photoelectric characteristics. Plasma etching is one of the key processes in the fabrication of SiC devices. However, it is difficult to obtain a smooth and vertical etch profile due to the subtrench effect when the conventional inductively coupled plasma (ICP) is used to etch SiC with small-size patterns (such as 1 μm holes or trenches), thus affecting the subsequent process and device performance. To study microscale pattern etch of 4H–SiC, we used different mask and etch gas systems for ICP etching. The etch profile was characterized using SEM. When the chlorine gas was used, there was no subtrench but a very inclined angle between the SiC bottom and sidewalls, which is hard to improve. When we used photoresist (PR) mask–HBr system, sidewall deposition happened. SiO2 mask–HBr/Ar system could help to etch different angles but has a limitation angle of up to 80°. Compared to above systems, the etching profile was much more vertical when HBr/SF6/O2 was used. After many rounds of process debugging, we obtain a good etching profile with flat and vertical sidewalls, no subtrench in the bottom and no damage of the SiO2 mask. Our work shows a good way of microscale pattern SiC etching by ICP.

Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma

Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

Dry Etching Characteristics of Algan/Gan Heterostructures Using Inductively Coupled H-2/Cl-2, Ar/Cl-2 and Bcl3/Cl-2 Plasmas

Nonselective etching of GaN/AlGaN heterostructures by Cl 2 /Ar/BCl 3 inductively coupled plasmas

Vertical and Smooth, Etching of Inp by Cl-2/Ch4/Ar Inductively Coupled Plasma at Room Temperature

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

NOVEL ETCHING TECHNOLOGY OF INP BY INDUCTIVELY COUPLED PLASMA1

Characteristics of Gan Thin Films by Inductively Coupled Plasma Etching with Cl-2/Bcl3 and Cl-2/Ar

Room temperature inductively coupled plasma etching of InP-based semiconductors using Cl2/N2 and Cl2/N 2/Ar mixtures

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Nanoscale Ge Fin Etching Using Inductively Coupled Plasma For Ge-Based Multi-Gate Devices

Deep InP gratings for opto-electronic devices etched by Cl 2/CH 4/Ar inductively coupled plasma

Smooth etching of sapphire wafers using BCl3 inductively coupled plasmas

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Microscale pattern etch of 4H–SiC by inductively coupled plasma

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Smooth Etching of Epitaxially Grown AlN Film by Cl2/BCl3/Ar-based Inductively Coupled Plasma

Deep InP Gratings for Opto-Electronic Devices Etched by Cl <sub>2</sub> /CH <sub>4</sub> /Ar Inductively Coupled Plasma

Plasma etching of III-V semiconductors and mechanism of crystalline damage

Inductively coupled plasma-reactive ion etching of InSb using CH[sub 4]∕H[sub 2]∕Ar plasma