Abstract:The processing of N-polar GaN (0001 ¯) samples has been studied, motivated by applications in which extensive back side thinning of freestanding GaN (FS-GaN) substrates is required. Experiments were conducted on FS-GaN from two commercial sources, in addition to epitaxial GaN with the N-face exposed by a laser lift-off process. The different types of samples produced equivalent results. Surface morphologies were examined over relatively large areas, using scanning electron microscopy and stylus profiling. The main focus of this study was on inductively coupled plasma (ICP) etch processes, employing Cl2∕Ar or Cl2∕BCl3Ar gas mixtures. Application of a standard etch recipe, optimized for feature etching of Ga-polar GaN (0001) surfaces, caused severe roughening of N-polar samples and confirmed the necessity for specific optimization of etch conditions for N-face material. A series of recipes with a reduced physical (sputter-based) contribution to etching allowed average surface roughness values to be consistently reduced to below 3nm. Maximum N-face etch rates of 370–390nm∕min have been obtained in recipes examined to date. These are typically faster than etch rates obtained on Ga-face samples under the same conditions and adequate for the process flows of interest. Mechanistic aspects of the ICP etch process and possible factors contributing to residual surface roughness are discussed. This study also included work on chemomechanical polishing (CMP). The optimized CMP process had stock removal rates of ∼500nm∕h on the GaN N face. This was much slower than the ICP etching but showed the important capability of recovering smooth surfaces on samples roughened in previous processing. In one example, a surface roughened by nonoptimized ICP etching was smoothed to give an average surface roughness of ∼2nm.

High Etch Rate and Smooth Morphology Using a Novel Chemistry in Reactive Ion Etching of GaN

A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

Chemical Etching of Freestanding N-polar GaN in Control of the Surface Morphology

Electrochemical etching of highly conductive GaN single crystals

Application of Wet Chemical Etching in GaN-based Materials

Demystifying metal-assisted chemical etching of GaN and related heterojunctions

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

Thinning of N-face GaN (0001 ¯) Samples by Inductively Coupled Plasma Etching and Chemomechanical Polishing

Characterization of anisotropic wet etching of Gallium Nitride for surface orientations of the crystallographic zone in H 3 P O 4 etchant

Investigation of Etch Rate Distribution by Micro-hemisphere for the Anisotropic Wet Etching of Ga-Face Gallium Nitride Crystal

Ultradeep electron cyclotron resonance plasma etching of GaN

Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN

Etch and growth rates of GaN for surface orientations in the crystallographic zone: Step flow and terrace erosion/filling via the Continuous Cellular Automaton

Catalyst and Processing Effects on Metal-Assisted Chemical Etching for the Production of Highly Porous Gan

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Formation of GaN nanostructures with various morphologies by photo-assisted electroless chemical etching

Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (\({11\overline{2}2}\)) and Non-Polar (\({11\overline{2}0}\)) GaN Nanorods

ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux

Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis