Abstract:Compared to other methods, we present the benefits of the Continuous Cellular Automaton (CCA) to describe in a simple and flexible manner anisotropic wet chemical etching of GaN as a combination of step flow and terrace erosion. In fact, the simplicity of the approach enables accounting for epitaxial growth of GaN based on the equivalent perspective of step flow and terrace filling (or build-up). A key ingredient is the direct removal/deposition of GaN groups of atoms, which directly enables describing etching/growth via the removal/deposition of a small number of different crystallographic cell types, each with a different removal/deposition rate. We focus on the derivation of mathematical expressions for the etch rates of the surface orientations contained in the crystallographic zone as a function of the removal rates of the various cell types, then describing their use also for growth. A least squares approach is used to determine optimal values for the removal/deposition rates of the various cell types. For the first time, Focused Ion Beam (FIB) etching is used to manufacture a well-known, vertically micromachined wagon-wheel structure for subsequent use in wet etching, thus enabling a comparison between the CCA-derived etch rates and the experimental values. For growth, the comparison is performed against data from the literature. The combination of average step flow and average terrace erosion/filling, as inherently contained in the CCA method, explains well the anisotropy of both etching and growth of GaN in the crystallographic zone.

Electrochemical etching of highly conductive GaN single crystals

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

Application of Wet Chemical Etching in GaN-based Materials

Formation of GaN nanostructures with various morphologies by photo-assisted electroless chemical etching

High Etch Rate and Smooth Morphology Using a Novel Chemistry in Reactive Ion Etching of GaN

Excellent wet etching technique using pulsed anodic oxidation for homoepitaxially grown GaN layer

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

Demystifying metal-assisted chemical etching of GaN and related heterojunctions

Enhanced Wet Etching of Patterned GaN with Ion Implantation

Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors

Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N

Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Ultradeep electron cyclotron resonance plasma etching of GaN

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

Light-assisted wet etching of semiconductor nitride GaN

Selective Etching of Gan Polar Surface in Potassium Hydroxide Solution Studied by X-Ray Photoelectron Spectroscopy

Etch and growth rates of GaN for surface orientations in the crystallographic zone: Step flow and terrace erosion/filling via the Continuous Cellular Automaton

Wet Etching in β-Ga2O3 Bulk Single Crystal

Morphological Evolution and Characterization of GaN Pyramid Arrays Fabricated by Photo-Assisted Chemical Etching

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas