Abstract:The modification of GaN with Au nanoparticles is a promising way for manipulating optical properties in optoelectronics and enhancing the sensitivity of GaN-based substrates used in Surface Enhanced Raman Spectroscopy. Ion implantation is an attractive method for the preparation of high-purity metal nanoparticles on the surface or within the bulk of solids, although this process in crystals is not yet fully understood. Here we study the specific stages of Au nanoparticle formation in c-plane GaN crystals implanted with 1.85 MeV Au ions to the fluence range of 1.5×1016 - 7×1016 cm−2. The implanted samples were annealed at 800 °C in an ammonia atmosphere for 20 minutes to support the nucleation of Au nanoparticles and prevent surface decomposition. The structural and optical properties of the samples were investigated by a combination of Rutherford backscattering spectroscopy in channeling mode (RBS-C), Transmission Electron Microscopy (TEM), Raman spectroscopy, photoluminescence (PL) and diffuse-reflectance spectroscopy (DRS). The two damaged regions, namely at the depth and at the surface, were identified. The depth region exhibits saturation of damage, unlike the surface region reaching an amorphous state for the highest implantation fluence. RBS-C revealed multimodal Au depth profiles for higher ion fluences, which were subsequently redistributed after thermal annealing due to the formation of Au nanoparticles, as confirmed by TEM. Au nanoparticles with fcc structure have been successfully synthesized with the Au-ion implantation fluence of 5×1016 cm−2 with the sizes mostly of 4 – 20 nm resulting in increased optical scattering and absorption within the spectral range of 500 – 700 nm associated with surface plasmon resonance (SPR) and the emergence of blue (2.8 eV) and red (2 eV) photoluminescence bands linked to the combined effect of SPR and implantation-induced defects.

Damage Evolution in Gan under Mev Heavy Ion Implantation

Swelling or Erosion on the Surface of Patterned Gan Damaged by Heavy Ion Implantation

Studies on Surface Damage Induced by Ion Bombardment

Study of Radiation Damage in Mg+-implanted GaN

Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation

Research on Evolution of Relevant Defects in Heavily Mg-Doped GaN by H Ion Implantation Followed by Thermal Annealing

Wet etching of GaN damaged by heavy ion irradiation

Evolution of Au nanoparticles in c-plane GaN under the heavy ion implantation and their optical properties

Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation

Study of Surface Morphology in GaAs by Hydrogen and Helium Implantation at Elevated Temperature

Enhanced Wet Etching of Patterned GaN with Ion Implantation

Analysis of Implantation-Induced Damage and Amorphization of Gasb

Damage Production and Annealing During Mev He Ion Rbs/Channeling Analysis of Gap

Evolution of secondary defects in arsenic implanted Si

Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3

Mechanical Properties of GaN Single Crystals Upon C Ion Irradiation: Nanoindentation Analysis

Molecular Dynamics Study on the Mechanism of Gallium Nitride Radiation Damage by Alpha Particles

Investigation on High-Energy Electron Irradiation on GaN Heterostructure by EBSD

Detail Study on Lattice Deformation and Recovery of GaN by Mg-ion-implantation and the Subsequent Thermal Annealing

Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Effects of Ion Irradiation and Temperature on Mechanical Properties of GaN Single Crystals under Nanoindentation