Abstract:Annealing Mg-implanted homoepitaxial GaN at temperatures above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects, in the form of inversion domains, contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. Triple-axis x-ray data reveal that implant-induced strain is fully relieved after annealing at 1300 °C for 10 min, indicating that strain-inducing point defects formed during implantation have reconfigured and inversion domains are formed. However, annealing at temperatures of 1400–1500 °C (one GPa N2 overpressure) eliminates the presence of the inversion domains. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop density is observed after annealing at the higher temperatures and longer times. Additionally, once inversion domains are formed and the samples are cooled to room temperature, they are shown to dissolve with subsequent annealing above 1400 °C. While such defects have been observed before, the important finding that such defects can be dissolved with a short, higher temperature step is key. Earlier work [Breckenridge et al., J. Appl. Phys. Lett. 118, 022101 (2021)] addressing electrical measurements of these types of samples showed that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements earlier work by identifying the inversion domains, which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (>1400 °C) annealing cycles to activate Mg in GaN, even if the Mg-containing inversion domains had been formed during lower temperature annealing.

Research on Evolution of Relevant Defects in Heavily Mg-Doped GaN by H Ion Implantation Followed by Thermal Annealing

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Detail Study on Lattice Deformation and Recovery of GaN by Mg-ion-implantation and the Subsequent Thermal Annealing

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

Impact of High-Temperature Mg-implantation on Defects and Dopants Distribution in GaN

An Evidence of Defect Gettering in GaN

Influence of Implanted Mg Concentration on Defects and Mg Distribution in GaN

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

Annealing study of ion implanted GaN

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Lattice Disorder and N Elemental Segregation in Ion Implanted GaN Epilayer

Study on MOCVD-Grown Mg-Doped GaN by Annealing Treatment

Optical and Electrical Properties of GaN: Mg Grown by MOCVD

Electrical Property and Annealing Characteristics of Heavy Mg-doped GaN Films

Lattice Location and Annealing Behavior of Mn Implanted GaN

Comparison of As-Grown and Annealed GaN/InGaN : Mg Samples

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Damage Evolution in Gan under Mev Heavy Ion Implantation

Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam

Property Manipulation Through Pulsed Laser Annealing in High Dose Mg-implanted GaN