Abstract:In this paper, three GaN epilayers grown on commercially available cone-patterned sapphire substrates (PSS) by Metal Organic Vapor Phase Epitaxy (MOVPE) were investigated. Voltage dependence of monochromatic cathodoluminescence (CL) was applied to investigate the threading dislocation (TD) behaviors. Fewer TDs were observed in CL images when the penetration depth of electron was made shorter by altering the acceleration voltage from 30 to 5kV. It was shown that many TDs were generated on the peaks of the cones, in-between cones, and in the coalescence regions, while there was almost no TD above the slopes of the cones. When the growth pressure was changed from 200 to 100Torr during the final stage, fewer TDs were observed in CL images, and the full widths at half maximum (FWHMs) for the (002) and (102) reflections’ X-ray diffraction (XRD) rocking curves decreased. Furthermore, when the growth temperature was decreased from 1040 to 1000°C during the middle stage, a clear hexagonal distribution of TDs was observed and the FWHMs for the (002) and (102) reflections’ XRD rocking curves further decreased. Atomic force microscopy (AFM) was used to investigate the surface morphology of the samples. In situ optical reflectivity spectra were measured to monitor the growth mode during the different growth stages. Based on the CL and reflectivity spectra results, the process of TDs’ evolution and distribution was deduced and sketched.

Etch-Pits, of Gan Films with Different Etching Methods

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Etch‐pits and Threading Dislocations in Thick LEO GaN Films on Sapphire Grown by MOCVD

Microstructure and Origin of Dislocation Etch Pits in Gan Epilayers Grown by Metal Organic Chemical Vapor Deposition

Study on the Dislocations in GaN Films by Wet-Chemical Etching

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Morphology and Defect of A-Gan Grown by Metal Orgamic Chemical Vapor Deposition

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

Two types of etching pits in (100) ?-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by casting method

Two types of etching pits in (100) β-Ga2O3 single crystals grown by casting method

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Etch pit formation on β-Ga2O3 by molten KOH+NaOH and hot H3PO4 and their correlation with dislocations

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

Microstructures Of Gan Films Laterally Overgrown On Si(111) By Hydride Vapour Phase Epitaxy

Evolution and Control of Dislocations in Gan Grown on Cone-Patterned Sapphire Substrate by Metal Organic Vapor Phase Epitaxy

Formation of GaN nanostructures with various morphologies by photo-assisted electroless chemical etching

Dopant Effects on Defects in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Transmission Electron Microscopy Study of the Microstructure of a GaN Film Grown on Sapphire by Organometallic Vapor Phase Expitaxy

Cathodoluminescence Study on the Impurity Behaviors at Threading Dislocations in GaN