Abstract:Reactive ion etching (RIE) is a widely applied technique for high-precision machining of demanding diamond devices. However, the persistent challenge of widely distributed dislocation-related etch pits on processed surfaces remains poorly understood. In this study, the material removal and pit formation during the etching of the dislocation region by hydrogen and oxygen were investigated by reactive force-field (ReaxFF) molecular dynamics simulation combined with experimental verification. The results unveiled the pivotal role of crystal structure disruption and symmetrically distributed stress, induced by dislocations, in promoting bond-breaking processes and triggering the formation of etch pits. The etching parameter optimized simulations revealed that once the impact effect of oxygen atoms counterbalances the promotion of dislocation to the bond breaking, the formation of dislocation pits can be effectively avoided, which is convincingly validated by experimental results. Besides, our research further verified that pure hydrogen etching is an inefficient surface post-treatment process with a more significant pit-forming problem, and exists two distinct pit-forming mechanisms dependent on the incident energy. Additionally, substrate temperature variation has global but negligible influences on pits formation within the 400 K range. These findings carry significant implications for the optimization of processing parameters and the large-scale implementation of RIE in diamond processing, demonstrating the potential to address pit-forming issues with commonly used gases.

Etch pit formation on β-Ga2O3 by molten KOH+NaOH and hot H3PO4 and their correlation with dislocations

Microstructure and Origin of Dislocation Etch Pits in Gan Epilayers Grown by Metal Organic Chemical Vapor Deposition

Two types of etching pits in (100) ?-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by casting method

Two types of etching pits in (100) β-Ga2O3 single crystals grown by casting method

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Etch-Pits, of Gan Films with Different Etching Methods

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Etch‐pits and Threading Dislocations in Thick LEO GaN Films on Sapphire Grown by MOCVD

Characterization of Dislocation Etch Pits by Molten KOH Etching in N- and P-Type 4h–sic Epilayers Doped by Ion Implantation

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

An Easy Approach to Identify Dislocation Types in GaN Films Through Selective Chemical Etching and Atom Force Microscopy

Study on the Dislocations in GaN Films by Wet-Chemical Etching

Formation of extended thermal etch pits on annealed Ge wafers

Dislocation Etching Morphology on the A Plane of Sapphire Crystal

Tridimensional morphology and kinetics of etch pit on the {0 0 0 1} plane of sapphire crystal

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

Mechanistic Insights into the Formation of Dislocation-Related Pits on Diamond Surface under Plasma Etching Treatment: A Combined Simulation and Experimental Approach

Heated-H3PO4 etching of (001) β-Ga2O3

Defect-selective Etching of Bulk AlN Single Crystals in Molten KOH/NaOH Eutectic Alloy

Measurement of Threading Dislocation Densities in Gan by Wet Chemical Etching

Defect-Related Etch Pits on Crystals and Their Utilization