Abstract:Sculpturing desired shapes in single crystal diamond is ever more crucial in the realization of complex devices for nanophotonics, quantum computing, and quantum optics. The crystallographic orientation dependent wet etch of single crystalline silicon in potassium hydroxide (KOH) allows a range of shapes formed and has significant impacts on MEMS (microelectromechanical systems), AFM (atomic force microscopy), and microfluidics. Here, a crystal direction dependent dry etching principle in an inductively-coupled plasma reactive ion etcher is presented, which allows to selectively reveal desired crystal planes in monocrystalline diamond by controlling the etching conditions. The principle is demonstrated when the kinetic energy of incident ions on diamond surfaces is reduced below a certain threshold leading to anisotropic etching and faceting along specific crystal planes. Using the principle, monolithic diamond nanopillars for magnetometry using nitrogen vacancy centers are fabricated. In these nanopillars, a half-tapering angle up to 21{\deg} is achieved, the highest angle reported, which leads to a high photon efficiency and high mechanical strength of the nanopillar. These results represent the first demonstration of crystallographic orientation dependent reactive ion etch principle, which opens a new window for shaping specific nanostructures which is at the heart of nanotechnology. It is believed that this principle will prove to be valuable for structuring and patterning of other single crystal materials as well.

Defect-Related Etch Pits on Crystals and Their Utilization

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Precise Fabrication of Point Defects in Self-Assembled Three-Dimensional Macroporous Photonic Crystals.

Two types of etching pits in (100) β-Ga2O3 single crystals grown by casting method

Formation of extended thermal etch pits on annealed Ge wafers

Study on the Etch-channel Defects in Crystal Quartz

Preface of 16th International Conference on Defects, Recognition, Imaging and Physics in Semiconductors

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Defect Control and High Quality Surface Preparation of InP Substrate

Fabrication and Characterization of InP/air-gap Structure

Flow Pattern Defects in Germanium-Doped Czochralski Silicon Crystals

High Strain Gradient Plasticity Associated with Wedge Indentation into Face-Centered Cubic Single Crystals: Geometrically Necessary Dislocation Densities

Two types of etching pits in (100) ?-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by casting method

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Wet etching of GaN, AlN, and SiC: a review

Toward Controllable Wet Etching of Monocrystalline Silicon: Roles of Mechanically Driven Defects

Effect of Different Etching Processes on Surface Defects of Quartz Crystals

In search of perfection: understanding the highly defect-selective chemistry of anisotropic etching

Crystallographic Orientation Dependent Reactive Ion Etch in Single Crystal Diamond

Micro-defects in Ge doped Czochralski grown Si crystals

Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method