Defect Control and High Quality Surface Preparation of InP Substrate

Yuchao Zhao,Dong Zhou,Wenping Sun,Duan Manlong,Yang Zixiang,Lü Xuru
2006-01-01
Abstract:Defects and their influence on InP single crystal substrate arc investigated.Results on cluster dislocation and its deterioration on lattice perfection,pit-like micro-defects,residual damage, and impurities and their removal by cleaning are presented.Formation mechanisms of the defects and approaches to suppressing them are discussed.Finally,epi-ready InP polished single crystal wafer with high lattice perfection,free of surface damage,is obtained.
What problem does this paper attempt to address?