Abstract:In the 55nm technology node and beyond of integrated circuits, tungsten is used in contact layer interconnection. Before tungsten deposition, a contact glue layer consist of titanium and titanium nitride (Ti/TiN) is used to enhance adhesion, reduce resistance and prevent tungsten diffusion into the substrate. The growth condition of contact glue layer(s) determines the characteristic of gap fill tungstenfilm, such as grain orientation and grain size. The film quality of the gap fill tungsten critically impacts tungsten chemical mechanical polishing (WCMP) rate. In this paper, we focus on the relationship between Platen 2 (P2) polishing time range in WCMP process and the growth condition of contact glue layer, including titanium thickness and plasma treatment condition for titanium nitride. We found thicker titanium with more definitive grain orientation could improve the film quality of titanium nitride and the gap fill tungsten. However, if the titanium becomes too thick, the gap fill tungsten may not fill the contact hole due to overhang. Moreover, multiple times of plasma treatment during titanium nitride deposition also improves the grain orientation of both titanium nitride and the gap fill tungsten. However, plasma treatment will extend titanium nitride process time and reduces wafer per hour (WPH).. We have determined the optimized condition of the glue layer(s) as 150 angstrom titanium and 3 x15 angstrom titanium nitride. With the optimized glue layer(s), we can get consistant gap fill tungsten film quality with reduced range in WCMP polishing time.

Investigation Of Tungsten Rich Residue Defects Induced By Electron Beam Inspection Post Contact Tungsten Chemical And Mechanical Polish

The detection and investigation of Tungsten-plug voids by electron-beam inspection

Experimental and Numerical Simulations of ELM-like Transient Damage Behaviors to Different Grade Tungsten and Tungsten Alloys

Tungsten Joining with Copper Alloy and Its High Heat Load Performance

Tungsten Plug Missing Defects Monitoring Method and Its Solution by Optimization of Polymer Cleaning and Micro-environment

The Inspection and Solution of Inline CT Defect for 28NM Process Improvement

Systematic Study of Electropolishing Technique for Improving the Quality and Production Reproducibility of Tungsten STM Probe

Electrochemical mechanism of layout-dependent corrosion of tungsten in contact plugs

Damage Evolution and Plastic Deformation Mechanism of Passivation Layer During Shear Rheological Polishing of Polycrystalline Tungsten

Defect Law of Cu/Co Patterned Wafers After Using a Novel Bulk/Barrier Slurry and Cleaning Solution

A comprehensive study on electrochemical polishing of tungsten

Theoretical and experimental investigation of chemical mechanical polishing of W–Ni–Fe alloy

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Study on the defect of copper CMP

The Study And Investigation Of Inline E-Beam Inspection For 28nm Process Development

Corrosion and Microstructure Evolution of He+ Irradiated Tungsten Pfms

Post Tungsten CMP Cleaning: Optimization for Cleaning Efficiency and Corrosion Reduction

An Investigation into the Deterioration of Copper Surface Quality in Plasma Electrolytic Polishing

Study On The Influence Of Contact Glue Layer Growth Condition On The Quality Of Gap Fill Tungsten Layer

Elimination the CMP Defects for TSV Process by Optimizing the Copper Electrodeposition

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content